2SD162晶体管资料

  • 2SD162别名:2SD162三极管、2SD162晶体管、2SD162晶体三极管

  • 2SD162生产厂家:日本富士通公司

  • 2SD162制作材料:Ge-NPN

  • 2SD162性质:低频或音频放大 (LF)

  • 2SD162封装形式:直插封装

  • 2SD162极限工作电压:20V

  • 2SD162最大电流允许值:0.03A

  • 2SD162最大工作频率:<1MHZ或未知

  • 2SD162引脚数:3

  • 2SD162最大耗散功率:0.65W

  • 2SD162放大倍数

  • 2SD162图片代号:D-28

  • 2SD162vtest:20

  • 2SD162htest:999900

  • 2SD162atest:0.03

  • 2SD162wtest:0.65

  • 2SD162代换 2SD162用什么型号代替:AC127,3BG1,

2SD162价格

参考价格:¥0.8514

型号:2SD1623S-TD-E 品牌:ON Semiconductor 备注:这里有2SD162多少钱,2025年最近7天走势,今日出价,今日竞价,2SD162批发/采购报价,2SD162行情走势销售排行榜,2SD162报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Bipolar Transistor

Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density,

ONSEMI

安森美半导体

1.5V,3V Strobe Applications

1.5V, 3V Strobe Applications Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. • Large current capacity and highly resistant to breakdown. • Excellent linearity of hFE in the region from low current to high current. • Ultrasmall

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. ● Large current capacity and highly resistant to breakdown. ● Excellent linearity of hFE in the region from low current to high current. ● Ultrasmall size supports high-density, u

KEXIN

科信电子

High-Current Driver Applications?

Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam

SANYO

三洋

Low-Frequency Power Amp Applications?

Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

Low-Frequency Power Amplifier Applications

Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

SANYO

三洋

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

SANYO

三洋

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SB1123

KEXIN

科信电子

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

ONSEMI

安森美半导体

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

SANYO

三洋

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

HIGH CURRENT SWITCHIG APPLICATION

DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO.

UTC

友顺

High-Current Switching Applications

High Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed.

KEXIN

科信电子

Power dissipation, Plastic-Encapsulate Transistors

FEATURES Power dissipation Plastic-Encapsulate Transistor (NPN)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

ONSEMI

安森美半导体

Driver Applications?

Applications · Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. Features · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high density, small-sized hybrid IC’.

SANYO

三洋

For Various Drivers

For Various Drivers Features · High DC current gain (4000 or greater). · Large current capacity. · Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers,

SANYO

三洋

Driver Applications?

Driver Applications Features • High DC current gain (hFE≥4000). • Wide ASO. • Very small size making it easy to provide high-density, small-sized hybrid ICs. Applications • Motor drivers, hammer drivers, relay drivers, voltage regulator control.

SANYO

三洋

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

ONSEMI

安森美半导体

High-Current Switching Applications

High-Current Switching Applications Features • Low saturation voltage. • High hFE. • Large current capacity. • Very small size making it easy to provide high-density, small-sized hybrid IC’s. Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers.

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Low saturation voltage. ● High hFE. ● Large current capacity. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

KEXIN

科信电子

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

UTC

友顺

Strobe DC-DC convertersm relay drivers, hammer drivers

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

ONSEMI

安森美半导体

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

ONSEMI

安森美半导体

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

ONSEMI

安森美半导体

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

ONSEMI

安森美半导体

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

UTC

友顺

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

UTC

友顺

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

UTC

友顺

1.5V, 3V Strobe Applications

文件:91.4 Kbytes Page:4 Pages

SANYO

三洋

1.5V, 3V Strobe Applications

文件:91.4 Kbytes Page:4 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

文件:57.63 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications

ONSEMI

安森美半导体

NPN Transistors

文件:1.0247 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.0247 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.0247 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.0247 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.0247 Mbytes Page:3 Pages

KEXIN

科信电子

Low-Frequency Power Amp Applications

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor

文件:56.97 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19327 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19327 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19327 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19327 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.19327 Mbytes Page:3 Pages

KEXIN

科信电子

2SD162产品属性

  • 类型

    描述

  • 型号

    2SD162

  • 功能描述

    两极晶体管 - BJT BIP NPN 3A 10V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-25 14:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC
23+
SOT-89
40000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
24+
SOT-89
20000
十年沉淀唯有原装
友顺 UTC
23+
SOT-89
12000
原装正品,实单请联系
UTC/友顺
25+
SOT-89
55000
UTC/友顺2SD1624G-S即刻询购立享优惠#长期有货
ON
24+
SOT89
3000
只做原装正品!公司原装现货!价格优势!
ROHM
25+
SMD
20000
专做罗姆,一系列可以订货排单,只做原装正品假一罚十
UTC/友顺
23+
SOT
28650
主营品牌深圳百分百原装现货假一罚十绝对价优
Slkor/萨科微
2025
SOT-89-3
400000
原厂直供全系列可定
UTC(友顺)
24+/25+
SOT-89-3
4000
UTC原厂一级代理商,价格优势!
ON
24+
SOT89
15000

2SD162数据表相关新闻