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2SD162晶体管资料
2SD162别名:2SD162三极管、2SD162晶体管、2SD162晶体三极管
2SD162生产厂家:日本富士通公司
2SD162制作材料:Ge-NPN
2SD162性质:低频或音频放大 (LF)
2SD162封装形式:直插封装
2SD162极限工作电压:20V
2SD162最大电流允许值:0.03A
2SD162最大工作频率:<1MHZ或未知
2SD162引脚数:3
2SD162最大耗散功率:0.65W
2SD162放大倍数:
2SD162图片代号:D-28
2SD162vtest:20
2SD162htest:999900
- 2SD162atest:0.03
2SD162wtest:0.65
2SD162代换 2SD162用什么型号代替:AC127,3BG1,
2SD162价格
参考价格:¥0.8514
型号:2SD1623S-TD-E 品牌:ON Semiconductor 备注:这里有2SD162多少钱,2025年最近7天走势,今日出价,今日竞价,2SD162批发/采购报价,2SD162行情走势销售排行榜,2SD162报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Bipolar Transistor Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density, | ONSEMI 安森美半导体 | |||
1.5V,3V Strobe Applications 1.5V, 3V Strobe Applications Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. • Large current capacity and highly resistant to breakdown. • Excellent linearity of hFE in the region from low current to high current. • Ultrasmall | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor Features ● Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. ● Large current capacity and highly resistant to breakdown. ● Excellent linearity of hFE in the region from low current to high current. ● Ultrasmall size supports high-density, u | KEXIN 科信电子 | |||
High-Current Driver Applications? Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam | SANYO 三洋 | |||
Low-Frequency Power Amp Applications? Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment. | SANYO 三洋 | |||
Low-Frequency Power Amplifier Applications Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment. | SANYO 三洋 | |||
High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied | SANYO 三洋 | |||
High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied | SANYO 三洋 | |||
Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | |||
NPN Epitaxial Planar Silicon Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SB1123 | KEXIN 科信电子 | |||
Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | |||
High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied | SANYO 三洋 | |||
Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | |||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
HIGH CURRENT SWITCHIG APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO. | UTC 友顺 | |||
High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. | KEXIN 科信电子 | |||
Power dissipation, Plastic-Encapsulate Transistors FEATURES Power dissipation Plastic-Encapsulate Transistor (NPN) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | |||
Driver Applications? Applications · Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. Features · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high density, small-sized hybrid IC’. | SANYO 三洋 | |||
For Various Drivers For Various Drivers Features · High DC current gain (4000 or greater). · Large current capacity. · Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers, | SANYO 三洋 | |||
Driver Applications? Driver Applications Features • High DC current gain (hFE≥4000). • Wide ASO. • Very small size making it easy to provide high-density, small-sized hybrid ICs. Applications • Motor drivers, hammer drivers, relay drivers, voltage regulator control. | SANYO 三洋 | |||
Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers | ONSEMI 安森美半导体 | |||
High-Current Switching Applications High-Current Switching Applications Features • Low saturation voltage. • High hFE. • Large current capacity. • Very small size making it easy to provide high-density, small-sized hybrid IC’s. Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers. | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor Features ● Low saturation voltage. ● High hFE. ● Large current capacity. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. | KEXIN 科信电子 | |||
HIGH-CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity. | UTC 友顺 | |||
Strobe DC-DC convertersm relay drivers, hammer drivers Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers | ONSEMI 安森美半导体 | |||
Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers | ONSEMI 安森美半导体 | |||
Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers | ONSEMI 安森美半导体 | |||
Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers | ONSEMI 安森美半导体 | |||
HIGH-CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity. | UTC 友顺 | |||
HIGH-CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity. | UTC 友顺 | |||
HIGH-CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity. | UTC 友顺 | |||
1.5V, 3V Strobe Applications 文件:91.4 Kbytes Page:4 Pages | SANYO 三洋 | |||
1.5V, 3V Strobe Applications 文件:91.4 Kbytes Page:4 Pages | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor 文件:57.63 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications | ONSEMI 安森美半导体 | |||
NPN Transistors 文件:1.0247 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.0247 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.0247 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.0247 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.0247 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
Low-Frequency Power Amp Applications | ONSEMI 安森美半导体 | |||
NPN Epitaxial Planar Silicon Transistor 文件:56.97 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.19327 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.19327 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.19327 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.19327 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.19327 Mbytes Page:3 Pages | KEXIN 科信电子 |
2SD162产品属性
- 类型
描述
- 型号
2SD162
- 功能描述
两极晶体管 - BJT BIP NPN 3A 10V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
23+ |
SOT-89 |
40000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
24+ |
SOT-89 |
20000 |
十年沉淀唯有原装 |
|||
友顺 UTC |
23+ |
SOT-89 |
12000 |
原装正品,实单请联系 |
|||
UTC/友顺 |
25+ |
SOT-89 |
55000 |
UTC/友顺2SD1624G-S即刻询购立享优惠#长期有货 |
|||
ON |
24+ |
SOT89 |
3000 |
只做原装正品!公司原装现货!价格优势! |
|||
ROHM |
25+ |
SMD |
20000 |
专做罗姆,一系列可以订货排单,只做原装正品假一罚十 |
|||
UTC/友顺 |
23+ |
SOT |
28650 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
Slkor/萨科微 |
2025 |
SOT-89-3 |
400000 |
原厂直供全系列可定 |
|||
UTC(友顺) |
24+/25+ |
SOT-89-3 |
4000 |
UTC原厂一级代理商,价格优势! |
|||
ON |
24+ |
SOT89 |
15000 |
2SD162芯片相关品牌
2SD162规格书下载地址
2SD162参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD1646
- 2SD1645
- 2SD1641
- 2SD1640
- 2SD1638
- 2SD1637
- 2SD1636
- 2SD1635
- 2SD1634
- 2SD1633
- 2SD1632
- 2SD1631
- 2SD1630
- 2SD163
- 2SD1629
- 2SD1628
- 2SD1627
- 2SD1626
- 2SD1625
- 2SD1624
- 2SD1623
- 2SD1622
- 2SD1621
- 2SD1620
- 2SD1619
- 2SD1618
- 2SD1617
- 2SD1616A
- 2SD1616
- 2SD1615A
- 2SD1615
- 2SD1614
- 2SD1613
- 2SD1612
- 2SD1611
- 2SD1610
- 2SD161
- 2SD1609
- 2SD1608
- 2SD1607
- 2SD1606
- 2SD1605
- 2SD1604
- 2SD1603
- 2SD1602
- 2SD1601
- 2SD1600
- 2SD1599
- 2SD1597
- 2SD1595
2SD162数据表相关新闻
2SD1616AG-TO92B-G-TG_UTC代理商
2SD1616AG-TO92B-G-TG_UTC代理商
2023-2-272SD1857L-TO92NLB-R-TG_UTC代理商
2SD1857L-TO92NLB-R-TG_UTC代理商
2023-2-162SD1624G-SOT89R-T-TG_UTC代理商
2SD1624G-SOT89R-T-TG_UTC代理商
2023-2-142SD1616AG-TO92B-Y-TG_UTC代理商
2SD1616AG-TO92B-Y-TG_UTC代理商
2023-2-82SD1859TV2R中文资料
2SD1859TV2R中文资料
2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
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