丝印代码：2SD1624；High Current Switching Applications

文件：458.08 Kbytes Page：7 Pages

丝印代码：2SD1624；High Current Switching Applications

文件：458.08 Kbytes Page：7 Pages

丝印代码：2SD1624；High Current Switching Applications

文件：458.08 Kbytes Page：7 Pages

1.5V,3V Strobe Applications

1.5V, 3V Strobe Applications Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. • Large current capacity and highly resistant to breakdown. • Excellent linearity of hFE in the region from low current to high current. • Ultrasmall

NPN Epitaxial Planar Silicon Transistor

Features ● Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. ● Large current capacity and highly resistant to breakdown. ● Excellent linearity of hFE in the region from low current to high current. ● Ultrasmall size supports high-density, u

Bipolar Transistor

Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density,

High-Current Driver Applications?

Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam

Low-Frequency Power Amp Applications?

Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.

Low-Frequency Power Amplifier Applications

Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

NPN Epitaxial Planar Silicon Transistor

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SB1123

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

双极晶体管，50V，2A，低饱和压，(PNP)NPN 单 PCP

2SD1623 is a Bipolar Transistor, 50V, 2A, Low VCE(sat), (PNP)NPN Single PCP for High-Current Switching Applications. • Adoption of FBET, MBIT processes\n• Low collector-to-emitter saturation voltage\n• Large current capacity and wide ASO\n• Fast switching speed\n• The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid ICs further miniaturization;

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

Power dissipation, Plastic-Encapsulate Transistors

FEATURES Power dissipation Plastic-Encapsulate Transistor (NPN)

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

NPN Epitaxial Planar Silicon Transistor

Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed.

High-Current Switching Applications

High Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

HIGH CURRENT SWITCHIG APPLICATION

DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO.

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri

Driver Applications?

Applications · Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. Features · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high density, small-sized hybrid IC’.

For Various Drivers

For Various Drivers Features · High DC current gain (4000 or greater). · Large current capacity. · Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers,

丝印代码：DJ；Driver Applications?

Driver Applications Features • High DC current gain (hFE≥4000). • Wide ASO. • Very small size making it easy to provide high-density, small-sized hybrid ICs. Applications • Motor drivers, hammer drivers, relay drivers, voltage regulator control.

NPN Epitaxial Planar Silicon Transistor

Features ● Low saturation voltage. ● High hFE. ● Large current capacity. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

High-Current Switching Applications

High-Current Switching Applications Features • Low saturation voltage. • High hFE. • Large current capacity. • Very small size making it easy to provide high-density, small-sized hybrid IC’s. Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers.

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

Strobe DC-DC convertersm relay drivers, hammer drivers

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

Bipolar Transistor20V, 5A, Low VCE(sat), NPN Single PCP

Features • Low saturation voltage • High hFE • Large current capacity • Very small size making it easy to provide highdensity, small-sized hybrid IC’s • Halogen free compliance Applications • Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

HIGH-CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR FEATURES * Low saturation voltage. * High hFE. * Large current capacity.

1.5V, 3V Strobe Applications

文件：91.4 Kbytes Page：4 Pages

1.5V, 3V Strobe Applications

文件：91.4 Kbytes Page：4 Pages

NPN Epitaxial Planar Silicon Transistor

文件：57.63 Kbytes Page：2 Pages

NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications

NPN Transistors

文件：1.0247 Mbytes Page：3 Pages

NPN Transistors

文件：1.0247 Mbytes Page：3 Pages

NPN Transistors

文件：1.0247 Mbytes Page：3 Pages

NPN Transistors

文件：1.0247 Mbytes Page：3 Pages

NPN Transistors

文件：1.0247 Mbytes Page：3 Pages

NPN Epitaxial Planar Silicon Transistor

文件：56.97 Kbytes Page：2 Pages

Low-Frequency Power Amp Applications

NPN Transistors

文件：1.19327 Mbytes Page：3 Pages