SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC t

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • On-chip C-to-B Zener diode for surge voltage absorption • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A • High DC Current Gain : hFE= 2000(Min) @IC= 1A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC