Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink w

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE • Complement to Type 2SB1052 APPLICATIONS • Designed for power amplifier applications.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • On-chip C-to-B Zener diode for surge voltage absorption • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A • High DC Current Gain : hFE= 2000(Min) @IC= 1A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC t

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC

Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

Medium Power Transistor

Features ● High current.(IC=5A). ● Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

Medium Power Transistor (50V,0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier applications.

Silicon NPN triple diffusion planar type(For high power amplification)

Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 ■Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which can

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

Complementary pair with 2SB1055

Si NPN Triple Diffused Planar High Power Amplifier Complementary pair with 2SB1055 Features ● Exceptionally good linearity of hFE ● Wide area of safe operation (ASO) ● High fT ● Full Pack package for simplified mounting onlyu by a screw, requires no insulator.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 APPLICATIONS ·Designed for high power amplifier applications.

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

High Power Amplifier Complementary Pair with 2SB1056

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 7A • Wide Area of Safe Operation • Complement to Type 2SB1057 APPLICATIONS • Designed for high power amplifier applications.

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057 Features • Exceptionally good linearity of hFE. • Wide area of safe operation (ASO) • High fT • Full Pack package for simplified mounting only by a screw, requires no insulator.

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1058

Silicon NPN Epitaxial

Application • Low frequency power amplifier

Transistor - Silicon NPN Epitaxial Planar Type

Medium Power Transistor (50V/ 0.5A)

Driver Transistor

Silicon NPN transistor in a SOT-23 Plastic Package

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Medium Power Transistor (50V,0.5A)

文件：67.24 Kbytes Page：3 Pages

Medium Power Transistor (50V,0.5A)

文件：112.84 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TOP-3F 包装：散装 描述：TRANS NPN 100V 5A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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