Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

Driver Transistor (支持 AEC-Q101)

车载双极晶体管与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。 •启动用表面安装型三极管;

Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

Medium Power Transistor

Features ● High current.(IC=5A). ● Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

丝印代码：YR；Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

丝印代码：YR；Medium Power Transistor (50V,0.5A)

文件：67.24 Kbytes Page：3 Pages

丝印代码：QR；Medium Power Transistor (50V,0.5A)

文件：112.84 Kbytes Page：3 Pages

Silicon NPN transistor in a SOT-23 Plastic Package

文件：707.86 Kbytes Page：6 Pages