NPN Silicon Triple Diffused Transistor Audio Frequency Power Ampllifier

Audio Frequency Power Ampllifier

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A APPLICATIONS • Designed for audio frequency power amplifier applications.

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

Audio Frequency Power Amplifier

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1312 is designed for use in driver and output stages of audio frequency amplifiers.

POWER TRANSISTORS(25A,350V,200W)

NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High power dissipation • High collector current • High speed switching • Low saturation voltage APPLICATIONS • High power amplifier applications • High power switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High power dissipation • High collector current • High speed switching • Low saturation voltage APPLICATIONS • High power amplifier applications • High power switching applications

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON

Medium Speed Power Switching Features 30V Zener diode built-in between C and B Very small fluctuation in breakdown voltages Large energy handing capability High speed switching N Type package configuration with a cooling fin for direct soldering on PC board of a small-size elec

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

Transistor-Bipolar Power Transistors

Silicon NPN Power Transistors

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三极管

High Power Dissipation

文件：127.58 Kbytes Page：2 Pages

High Power Switching Applications

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