SI NPN TRIPLE DIFFUSED MESA

Horizontal Deflection Output for Small Color TV Set

Silicon NPN epitaxial planer type(For low-voltage output amplification)

Features . Low collector-emiiter saturation voltage Vce(sat) . Low ON resistance Ron . High forward current transfer ratio hfe

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ● High emitter-base voltage VEBO=7.5V(min)* ● High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA) ● Low on resistan

Si NPN Epitaxial Planar

2SD1291 Si NPN Triple Diffused Mesa Horizontal Deflection Output for Color TV Set Features ● Built-in damper diode on chip ● High voltage and high reliability by glass passivation. ● Wide area of safe operation (ASO) 2SD1304 Si NPN Epitaxila Planar AF Amplifier Feature ● Built-in zener

Si NPN Epitaxial Planar

2SD1291 Si NPN Triple Diffused Mesa Horizontal Deflection Output for Color TV Set Features ● Built-in damper diode on chip ● High voltage and high reliability by glass passivation. ● Wide area of safe operation (ASO) 2SD1304 Si NPN Epitaxila Planar AF Amplifier Feature ● Built-in zener

Si NPN Epitaxial Planar

2SD1291 Si NPN Triple Diffused Mesa Horizontal Deflection Output for Color TV Set Features ● Built-in damper diode on chip ● High voltage and high reliability by glass passivation. ● Wide area of safe operation (ASO) 2SD1304 Si NPN Epitaxila Planar AF Amplifier Feature ● Built-in zener

Si NPN Epitaxial Planar

2SD1291 Si NPN Triple Diffused Mesa Horizontal Deflection Output for Color TV Set Features ● Built-in damper diode on chip ● High voltage and high reliability by glass passivation. ● Wide area of safe operation (ASO) 2SD1304 Si NPN Epitaxila Planar AF Amplifier Feature ● Built-in zener

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

SOT-23 Plastic-Encapsulate Transistors

ApplicationLow frequency amplifier, Muting

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) Application ● Low frequency amplifier, Muting

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

Silicon NPN Power Transistors

DESCRIPTION 1. With TO-220 package 2. Low collector saturation voltage 3. DARLINGTON 4. Complement to type 2SB974

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A APPLICATIONS ·Designed for audio frequency amplifier and low-speed switching industrial use.

NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

Audio Frequency Amplifier and Low Speed Switching Industrial Use

NPN Silicon Triple Diffused Transistor Audio Frequency Power Ampllifier

Audio Frequency Power Ampllifier

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A APPLICATIONS • Designed for audio frequency power amplifier applications.

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

Audio Frequency Power Amplifier

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1312 is designed for use in driver and output stages of audio frequency amplifiers.

POWER TRANSISTORS(25A,350V,200W)

NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High power dissipation • High collector current • High speed switching • Low saturation voltage APPLICATIONS • High power amplifier applications • High power switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High power dissipation • High collector current • High speed switching • Low saturation voltage APPLICATIONS • High power amplifier applications • High power switching applications

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON

Medium Speed Power Switching Features 30V Zener diode built-in between C and B Very small fluctuation in breakdown voltages Large energy handing capability High speed switching N Type package configuration with a cooling fin for direct soldering on PC board of a small-size elec

SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON

Medium Speed Power Switching

SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON

Medium Speed Power Switching

Silicon NPN triple diffusion planar type Darlington For midium speed power switching

Medium Speed Power Switching

Silicon NPN triple diffusion planar type Darlington For midium speed power switching

Medium Speed Power Switching

Silicon NPN epitaxial planer type(For low-voltage output amplification)

Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter ■Features ● Low collector to emitter saturation voltage VCE(sat). ● Low ON resistance Ron. ● High foward current transfer ratio hFE .

Silicon NPN Epitaxial Planar Type

Silicon NPN Epitaxial Planar Type Features Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat). High foward current transfer ratio hFE.

DVD Video Recorder Service Manual

Feature General A few seconds after tuning on the unit,you can start recording to DVD-RAM,HDD. You can switch the operation of this function (ON/OFF) on the menu screen. . Quick start(REC) principle In the power-off at Quick start, only power supplies for video IC,tuner and storage media are

Silicon NPN epitaxial planer type(For low-voltage output amplification)

Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Low ON resistance Ron. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual in

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V • High Speed Switching APPLICATIONS • High power switching applications

2SD1341P

2SD1341P

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage • Built-in damper diode APPLICATIONS • For color TV horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage • Built-in damper diode APPLICATIONS • For color TV horizontal deflection output applications

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Time • Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 4A • Wide Area of Safe Operation • Complement to Type 2SB983 APPLICATIONS • Inverters, converters • Controllers for DC motor, pulse motor • Switching power supplies • General power applications

Large-Current Driving Applications

Large-Current Driving Applications Features • Adoption of FBET, MBIT processes. • Low saturation voltage. • Large current capacity and wide ASO. Applcations • Power supplies, relay drivers, lamp drivers, electrical equipment.

50V/4A Switching Applications

50V/4A Switching Applications Features · Adoption of FBET and MBIT processes. · Low saturation voltage. · High current capacity and wide ASO. Applications · Power supplies, relay drivers, lamp drivers, electrical equipment.

NPN Darlington Transistor

NPN Darlington Transistor

Silicon NPN triple diffusion planer type

For high breakdown voltage switching ■ Features • High collector-base voltage (Emitter open) VCBO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • M type package, allowing easy automatic and manual insertion as well as stand-alone fixing

Silicon NPN triple diffusion planer type

For high breakdown voltage switching ■ Features • High collector-base voltage (Emitter open) VCBO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • M type package, allowing easy automatic and manual insertion as well as stand-alone fixing

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB988 • Low collector saturation voltage APPLICATIONS • For general purpose application

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB988 • Low collector saturation voltage APPLICATIONS • For general purpose application

NPN Complementary Silicon Power Transistors

FEATURES ● Complements the 2SB988. ● Wide Safe Operationg Area. ● Fast Switching Speed. ● Wide ASO. APPLICATIONS ● Power Amplifier Applications. ● Vertical Output Applications. ● Switching Applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) • Good Linearity of hFE • Complement to Type 2SB989 APPLICATIONS • Designed for general purpose application

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.

FEATURES: -High DC Current Gain of 200 to 1200 at VCE-5V, IC=0.5A -Low VCE(sat) of 1.0V (Max.) at IC 1A, IB-0.02A -Collector Power Dissipation of 30W at Tc=25°C

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.

FEATURES: -High DC Current Gain : hFE-300 (Max.) (VCE-5V, IC=0.5A) -Low Saturation Voltage : VCE(sat)=1.OV (Max.) (Ic-3A, IB-0.3A) -High Power Dissipation: Pc-30W (Tc-25°C) -Complementary to 28B994

POWER AMPLIFIER APPLICATIONS.

FEATURES: -High Power Dissipation: Pc 30W (Te-25°C). -Good Linearity of hee -Complementary to 2SB996 -Recommended for 20-25W High Fidelity Audio Frequency Amplifier Output Stage'.

HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE. MOTOR DRIVE APPLICATIONS.

FEATUREST -High DC Current Gain: hFg-2000 (Min.) (at VCE 3V, IC-3A) -Low Saturation Voltage: VCE(sat)=1.5V (Max.) (at Ic=3A) -Complementary to 25B997, 2SB998, 25B999

HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE. MOTOR DRIVE APPLICATIONS.

FEATUREST -High DC Current Gain: hFg-2000 (Min.) (at VCE 3V, IC-3A) -Low Saturation Voltage: VCE(sat)=1.5V (Max.) (at Ic=3A) -Complementary to 25B997, 2SB998, 25B999

HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE. MOTOR DRIVE APPLICATIONS.

FEATUREST -High DC Current Gain: hFg-2000 (Min.) (at VCE 3V, IC-3A) -Low Saturation Voltage: VCE(sat)=1.5V (Max.) (at Ic=3A) -Complementary to 25B997, 2SB998, 25B999

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio

SILICON NPN TRIPLE DIFFUSED TYPE

FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) (at Ic=4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992

HIGH CURRENT SWITCHING APPLICATIONS.. POWER AMPLIFIER APPLICATIONS.

FEATURES: -High Collector Current Ic=7A -Low Saturation Voltage : VCE (sat)=0.4V (Max.) (at Ic=4A) -High Collector Power Dissipation : PC 40W (at Tc-25°C) -Complementary to 25B993

Silicon NPN Epitaxial

Application Low frequency power amplifier

Silicon NPN Epitaxial

Application Low frequency power amplifier

Silicon NPN Epitaxial

Application Low frequency power amplifier