您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第1176页 > 2SD122

2SD122晶体管资料

  • 2SD122别名：2SD122三极管、2SD122晶体管、2SD122晶体三极管

  • 2SD122生产厂家：日本日立公司

  • 2SD122制作材料：Si-NPN

  • 2SD122性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SD122封装形式：特殊封装

  • 2SD122极限工作电压：60V

  • 2SD122最大电流允许值：3A

  • 2SD122最大工作频率：<1MHZ或未知

  • 2SD122引脚数：3

  • 2SD122最大耗散功率：15W

  • 2SD122放大倍数：

  • 2SD122图片代号：D-112

  • 2SD122vtest：60

  • 2SD122htest：999900

  • 2SD122atest：3

  • 2SD122wtest：15

  • 2SD122代换 2SD122用什么型号代替：BD235,BD241A,BD377,BD535,BD577,BD587,BD935,2SD712,3DK204B,

2SD122价格

参考价格：￥20.7678

型号：2SD1223(TE16L1,NQ) 品牌：Toshiba 备注：这里有2SD122多少钱，2025年最近7天走势，今日出价，今日竞价，2SD122批发/采购报价，2SD122行情走势销售排行榜，2SD122报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SD1220

NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Complementary to 2SB905

TOSHIBA

东芝

2SD1220

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SD1220

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1220

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1220

Silicon NPN Epitaxial Transistor

Features Power Amplifier Applications

KEXIN

科信电子

2SD1220-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1220-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1221

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1221

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1221

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SD1221

NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

Audio Frequency Power Amplifier Application • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906

TOSHIBA

东芝

2SD1221-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1221-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1222

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1222

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1222

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SD1222

NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) • Complementary to 2SB907.

TOSHIBA

东芝

2SD1222-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1222-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1223

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SD1223

NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB908.

TOSHIBA

东芝

2SD1223

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1223

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1223-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1223-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1224

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1224

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1224

NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

TOSHIBA

东芝

2SD1224-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1224-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1225

2SD1225

2SD1225

ROHM

罗姆

2SD1226

Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

ROHM

罗姆

2SD1226M

Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

ROHM

罗姆

2SD1227M

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHM

罗姆

2SD1228

2SD1228

2SD1228

ROHM

罗姆

2SD1229

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SB912 • High DC current gain • High current capacity and wide ASO • Low saturation voltage APPLICATIONS • Motor drivers, printer hammer drivers, relay drivers,voltage regulator control.

ISC

无锡固电

2SD1229

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SB912 • High DC current gain • High current capacity and wide ASO • Low saturation voltage APPLICATIONS • Motor drivers, printer hammer drivers, relay drivers,voltage regulator control.

SAVANTIC

2SD1229

Driver Applications??????????

Driver Applications Features • High DC current gain. • High current capacity and wide ASO. • Low saturation voltage. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage reguraltor control.

SANYO

三洋

2SD1220

Silicon NPN Epitaxial Type (PCT Process)

文件：151.55 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1220

Power Amplifier Applications

文件：155.6 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1220_06

Silicon NPN Epitaxial Type (PCT Process)

文件：151.55 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1220_10

Power Amplifier Applications

文件：155.6 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1221

Audio Frequency Power Amplifier Application

文件：156.69 Kbytes Page：4 Pages

TOSHIBA

东芝

2SD1221

Power transistor for low frequency applications

TOSHIBA

东芝

2SD1221_10

Audio Frequency Power Amplifier Application

文件：156.69 Kbytes Page：4 Pages

TOSHIBA

东芝

2SD1221_15

NPN Transistors

文件：1.33517 Mbytes Page：3 Pages

KEXIN

科信电子

2SD1221-G

NPN Transistors

文件：1.33517 Mbytes Page：3 Pages

KEXIN

科信电子

2SD1221-O

NPN Transistors

文件：1.33517 Mbytes Page：3 Pages

KEXIN

科信电子

2SD1221-Y

NPN Transistors

文件：1.33517 Mbytes Page：3 Pages

KEXIN

科信电子

2SD1222

Power transistor for low frequency applications

TOSHIBA

东芝

2SD1222

Switching Applications

文件：162.29 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1222_10

Switching Applications

文件：162.29 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1223

Switching Applications

文件：163.63 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1223

Power transistor for low frequency applications

TOSHIBA

东芝

2SD1223(TE16L1,NQ)

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN DARL 80V 4A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SD1223,L1XGQ(O

包装：散装 描述：TRANSISTOR NPN DARL PWMOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SD1223_10

Switching Applications

文件：163.63 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1224

Pulse Motor Drive, Hammer Drive Applications

文件：155.68 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1224_06

Pulse Motor Drive, Hammer Drive Applications

文件：155.68 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD1229

Silicon NPN Power Transistors

文件：145.84 Kbytes Page：3 Pages

SAVANTIC

2SD122产品属性

  • 类型

    描述

  • 型号

    2SD122

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TOSHIBA TRANS. SC-64150V 1.5A 1W BCE

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

2SD122供应商更多...

更新时间：2025-10-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
2SD1221
TOSHIBA/东芝
22+
SOT252
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
2SD1221
TOSHIBA/东芝
24+
NA/
6250
原装现货,当天可交货,原型号开票
询价
深圳市富利微电子科技有限公司
2SD1221
TOSHIBA
24+
TO252
30000
原装正品公司现货,假一赔十!
询价
深圳市富芯乐电子科技有限公司
2SD1221
TOSHIBA
24+
TO-252
5000
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市振宏微科技有限公司
2SD1221
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市华斯顿科技有限公司
2SD1221
Sanyo
25+23+
To-252
28312
绝对原装正品全新进口深圳现货
询价
深圳市恒凯威科技开发有限公司
2SD1221
TOSHIBA
21+
TO252
10000
只做原装,质量保证
询价
深圳市科达星科技有限公司
2SD1221
TOSHIBA
24+
SOT-252
96000
公司大量原装现货,欢迎来电
询价
深圳市赛特兴科技有限公司
2SD1221
TOSHIBA
23+
TO252
12800
正规渠道,只有原装!
询价
深圳市一线半导体有限公司
2SD1221
TOSHIBA
24+
TO-252
40
新进库存/原装
询价

2SD122芯片相关品牌

2SD122规格书下载地址

2SD122参数引脚图相关

2SD122数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示