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2SD122晶体管资料

2SD122别名：2SD122三极管、2SD122晶体管、2SD122晶体三极管
2SD122生产厂家：日本日立公司
2SD122制作材料：Si-NPN
2SD122性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SD122封装形式：特殊封装
2SD122极限工作电压：60V
2SD122最大电流允许值：3A
2SD122最大工作频率：<1MHZ或未知
2SD122引脚数：3
2SD122最大耗散功率：15W
2SD122放大倍数：
2SD122图片代号：D-112
2SD122vtest：60
2SD122htest：999900
2SD122atest：3
2SD122wtest：15

2SD122代换 2SD122用什么型号代替：BD235,BD241A,BD377,BD535,BD577,BD587,BD935,2SD712,3DK204B,

2SD122价格

参考价格：￥20.7678

型号：2SD1223(TE16L1,NQ) 品牌：Toshiba 备注：这里有2SD122多少钱，2026年最近7天走势，今日出价，今日竞价，2SD122批发/采购报价，2SD122行情走势销售排行榜，2SD122报价。

型号	功能描述	生产厂家企业	LOGO
2SD1220	NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • Complementary to 2SB905	TOSHIBA 东芝	TOSHIBA
2SD1220	Silicon NPN Epitaxial Transistor Features Power Amplifier Applications	KEXIN 科信电子	KEXIN
2SD1220	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SD1220	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1220	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1220-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1220-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1221	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1221	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1221	Power transistor for low frequency applications Application Scope：Low frequency power amplifier\nPolarity：NPN\nComplementary Product：2SB906\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 3 A \nCollector power dissipation PC 20 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO 60 V ;	TOSHIBA 东芝	TOSHIBA
2SD1221	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SD1221	NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) Audio Frequency Power Amplifier Application • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906	TOSHIBA 东芝	TOSHIBA
2SD1221-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1221-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1222	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1222	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1222	Power transistor for low frequency applications Feature：Darlington\nApplication Scope：Switching / Power amplifier\nPolarity：NPN\nComplementary Product：2SB907\nRoHS Compatible Product(s) (#)：Available Collector Current IC 3 A \nCollector power dissipation PC 15 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO 40 V ;	TOSHIBA 东芝	TOSHIBA
2SD1222	NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) • Complementary to 2SB907.	TOSHIBA 东芝	TOSHIBA
2SD1222	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SD1222-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1222-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1223	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1223	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1223	Power transistor for low frequency applications Feature：Darlington\nApplication Scope：Power amplifier / Switching\nPolarity：NPN\nComplementary Product：2SB908\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 4 A \nCollector power dissipation PC 15 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO 80 V ;	TOSHIBA 东芝	TOSHIBA
2SD1223	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SD1223	NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB908.	TOSHIBA 东芝	TOSHIBA
2SD1223-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1223-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1224	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1224	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1224	NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SD1224-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1224-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1225	2SD1225 2SD1225	ROHM 罗姆	ROHM
2SD1226	Medium Power Amp. Epitaxial Planar NPN Silicon Transistors Medium Power Amp. Epitaxial Planar NPN Silicon Transistors	ROHM 罗姆	ROHM
2SD1226M	Medium Power Amp. Epitaxial Planar NPN Silicon Transistors Medium Power Amp. Epitaxial Planar NPN Silicon Transistors	ROHM 罗姆	ROHM
2SD1227M	Medium Power Transistor (32V, 2A) FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.	ROHM 罗姆	ROHM
2SD1228	2SD1228 2SD1228	ROHM 罗姆	ROHM
2SD1229	Driver Applications?????????? Driver Applications Features • High DC current gain. • High current capacity and wide ASO. • Low saturation voltage. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage reguraltor control.	SANYO 三洋	SANYO
2SD1229	Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SB912 • High DC current gain • High current capacity and wide ASO • Low saturation voltage APPLICATIONS • Motor drivers, printer hammer drivers, relay drivers,voltage regulator control.	ISC 无锡固电	ISC
2SD1229	Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SB912 • High DC current gain • High current capacity and wide ASO • Low saturation voltage APPLICATIONS • Motor drivers, printer hammer drivers, relay drivers,voltage regulator control.	SAVANTIC	SAVANTIC
2SD1220	Power Amplifier Applications 文件：155.6 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1220	Silicon NPN Epitaxial Type (PCT Process) 文件：151.55 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1220_06	Silicon NPN Epitaxial Type (PCT Process) 文件：151.55 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1220_10	Power Amplifier Applications 文件：155.6 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1221	Audio Frequency Power Amplifier Application 文件：156.69 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SD1221_10	Audio Frequency Power Amplifier Application 文件：156.69 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SD1221_15	NPN Transistors 文件：1.33517 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SD1221-G	NPN Transistors 文件：1.33517 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SD1221-O	NPN Transistors 文件：1.33517 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SD1221-Y	NPN Transistors 文件：1.33517 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SD1222	Switching Applications 文件：162.29 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1222_10	Switching Applications 文件：162.29 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1223	Switching Applications 文件：163.63 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1223(TE16L1,NQ)	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS NPN DARL 80V 4A PW-MOLD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SD1223,L1XGQ(O	包装：散装描述：TRANSISTOR NPN DARL PWMOLD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SD1223_10	Switching Applications 文件：163.63 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1224	Pulse Motor Drive, Hammer Drive Applications 文件：155.68 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1224_06	Pulse Motor Drive, Hammer Drive Applications 文件：155.68 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD1229	Silicon NPN Power Transistors 文件：145.84 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

2SD122产品属性

类型
描述
Product Category：
Power transistor for low frequency applications
Package name(Toshiba)：
PW-Mold

2SD122供应商更多...

更新时间：2026-5-14 19:34:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	2SD1222(TE16L1,NQ)	TOSHIBA	24+/25+		550	原装正品现货库存价优	询价
深圳市科恒伟业电子有限公司	2SD1222	TOSHIBA/东芝	2450+	TO-252	9850	只做原装正品现货或订货假一赔十!	询价
深圳市昌和盛利电子有限公司	2SD1222	TOSHIBA	26+	TO-252	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市振宏微科技有限公司	2SD1222	SOT252	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市星宇佳科技有限公司	2SD1222	TOSHIBA/东芝	96+	TO-252	29350		询价
深圳市华斯顿科技有限公司	2SD1222	TOS	25+23+	TO-252	27160	绝对原装正品全新进口深圳现货	询价
深圳市一线半导体有限公司	2SD1222	TOSHIBA	24+	TO-252	8800	新进库存/原装	询价
深圳市拓亿芯电子有限公司	2SD1222	TOSHIBA/东芝	25+	TO-252	30000	全新原装现货,价格优势	询价
深圳市创新迹电子有限公司	2SD1222Q		22+	TO251	20000	公司只有原装品质保证	询价
深圳市昊创电子有限公司	2SD1222	ROHM/罗姆	专业铁帽	TO-252	83	原装铁帽专营,代理渠道量大可订货	询价

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2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
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找IC，尽在114IC

2SD122晶体管资料

2SD122价格

2SD122产品属性

2SD122供应商更多...

2SD122芯片相关品牌

2SD122规格书下载地址

2SD122参数引脚图相关

2SD122数据表相关新闻

2SD1616AG-TO92B-G-TG_UTC代理商

2SD1624G-SOT89R-T-TG_UTC代理商

2SD1616AG-TO92B-Y-TG_UTC代理商

2SC5569G-SOT89R-TG

2SC5826中文资料库

2SC945_2SC945晶体管_2SC945中文资料_2SC945代换

DdatasheetPDF页码索引