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2SC570晶体管资料

2SC570别名：2SC570三极管、2SC570晶体管、2SC570晶体三极管
2SC570生产厂家：日本东光股份公司
2SC570制作材料：Si-NPN
2SC570性质：微型（Min）_开关管（S）
2SC570封装形式：直插封装
2SC570极限工作电压：40V
2SC570最大电流允许值：0.2A
2SC570最大工作频率：<1MHZ或未知
2SC570引脚数：3
2SC570最大耗散功率：0.3W
2SC570放大倍数：
2SC570图片代号：C-62
2SC570vtest：40
2SC570htest：999900
2SC570atest：0.2
2SC570wtest：0.3

2SC570代换 2SC570用什么型号代替：BSS11,BSX19,BSX20,BSX87,BSX88,BSX92,BSX93,BSY63,2N2368,2N2368A,2N2369,

2SC570价格

参考价格：￥1.7464

型号：2SC5706-E 品牌：ONSemi 备注：这里有2SC570多少钱，2026年最近7天走势，今日出价，今日竞价，2SC570批发/采购报价，2SC570行情走势销售排行榜，2SC570报价。

型号	功能描述	生产厂家企业	LOGO
2SC570	2SC790 文件：39.1 Kbytes Page：1 Pages	TOSHIBA 东芝	TOSHIBA
2SC5700	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SC5700	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	RENESAS 瑞萨	RENESAS
2SC5700WB-TR-E	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	RENESAS 瑞萨	RENESAS
2SC5700WB-TR-E	Silicon NPN Epitaxial VHF/UHF wide band amplifier • High power gain low noise figure at low power operation:\n \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz);	RENESAS 瑞萨	RENESAS
2SC5702	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz	RENESAS 瑞萨	RENESAS
2SC5702	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SC5702ZS-TL-E	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz	RENESAS 瑞萨	RENESAS
2SC5703	丝印代码：WA；Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5703	TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5703	Power transistor for high-speed switching applications Feature：Low saturation voltage\nApplication Scope：Mobile equipment power supplies\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 4 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.25 W \nCollector-emitter voltage VCEO 50 V ;	TOSHIBA 东芝	TOSHIBA
2SC5703	High-Speed Switching Applications DC-DC Converter Applications Strobe Applications •High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5703_V01	High-Speed Switching Applications DC-DC Converter Applications Strobe Applications •High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5704	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5704-T3	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5706	isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor	ISC 无锡固电	ISC
2SC5706	NPN EPITAXIAL PLANAR TRANSISTOR Features: * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation	WEITRON	WEITRON
2SC5706	POWER TRANSISTOR(5A,50V,15W) NPN Silicon Power Transistors DPAK Surface Mount Power Package The DPAK Power transistor is used by general purpose amplifiers, relay drives, lmap drives, motor drivers, and high speed switching applications.	MOSPEC 统懋	MOSPEC
2SC5706	High Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers,	SANYO 三洋	SANYO
2SC5706	Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage, high-speed switching, high allowable power dissipation. Applications DC-DC converter, relay drivers, lamp drivers motor drivers.	FOSHAN 蓝箭电子	FOSHAN
2SC5706	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706D	NPN Silicon General Purpose Transistor FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	SECOS 喜可士	SECOS
2SC5706-E	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706-H	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706-TL-E	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706-TL-H	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5707	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707	isc Silicon NPN Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA2040 APPLICATIONS • DC/DC converter,relay drivers,l	ISC 无锡固电	ISC
2SC5707	Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela	ONSEMI 安森美半导体	ONSEMI
2SC5707	High Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707-251	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707-252	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707-E	Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela	ONSEMI 安森美半导体	ONSEMI
2SC5707-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707-TL-E	Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela	ONSEMI 安森美半导体	ONSEMI
2SC5707-TL-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707-TL-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5709	DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strobes.	SANYO 三洋	SANYO
2SC5709.	DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strobes.	SANYO 三洋	SANYO
2SC5702	Transistor-Small Signal Bip-TRSs for High Frequency Amplifier	RENESAS 瑞萨	RENESAS
2SC5703	Silicon NPN Epitaxial Type High-Speed Switching Applications 文件：137.97 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC5703_06	Silicon NPN Epitaxial Type High-Speed Switching Applications 文件：137.97 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC5706	High Current Switching Applications 文件：67.01 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SC5706	High-Current Switching Applications 文件：507.53 Kbytes Page：10 Pages	SANYO 三洋	SANYO
2SC5706	isc Silicon NPN Power Transistors 文件：335.96 Kbytes Page：3 Pages	ISC 无锡固电	ISC
2SC5706-E	Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5706-H	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装描述：TRANS NPN 50V 5A TP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SC5706-H	Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5706-P-E	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 100V 5A TP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SC5706-TL-E	Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5706-TL-H	Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5707	High-Current Switching Applications 文件：509.1 Kbytes Page：10 Pages	SANYO 三洋	SANYO
2SC5707	High Current Switching Applications 文件：64.26 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SC5707-E	Bipolar Transistor 文件：436.72 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5707-TL-E	Bipolar Transistor 文件：436.72 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI

2SC570产品属性

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2SC570供应商更多...

更新时间：2026-5-14 21:11:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市润联芯城科技有限公司	2SC5703	TOSHIBA/东芝	23+	SOT-23	50000	原装正品支持实单	询价
中天科工半导体（深圳）有限公司	2SC5707	SANYO/三洋	25+	TO-251	32000	SANYO/三洋全新特价2SC5707即刻询购立享优惠#长期有货	询价
深圳市联世界科技有限公司	2SC5703(T5LHY-AT,F	TOSHIBA	24+/25+		6000	原装正品现货库存价优	询价
深圳市科恒伟业电子有限公司	2SC5703	TOSHIBA/东芝	2540+	TSM	8595	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市豪迈兴电子有限公司	2SC5703	TOSHIBA	24+	TSM	4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市华康联电子科技有限公司	2SC5706-E	ONSEMI	24+	N/A	10000	只做原装,实单最低价支持	询价
深圳市芯球通科技有限公司	2SC5706-TL-E	ON(安森美)	23+	TP-FA	14750	公司只做原装正品,假一赔十	询价
深圳市正纳电子有限公司	2SC5703	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市明嘉莱科技有限公司	2SC5703(TE85L,F)	TOSHIBA/东芝	1701	明嘉莱只做原装正品现货	2510000	TSSOP14	询价
深圳市湘达电子科技有限公司	2SC5703(TE85L,F)	TOSHIBA/东芝	2022+	TSSOP14	100	百分百进口原装现货。	询价

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2SC570晶体管资料

2SC570价格

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2SC570供应商更多...

2SC570芯片相关品牌

2SC570规格书下载地址

2SC570参数引脚图相关

2SC570数据表相关新闻

2SD1616AG-TO92B-G-TG_UTC代理商

2SC5353BL-TO126CK-TG

2SC5569G-SOT89R-TG

2SC5299

2SC5826中文资料库

2SC945_2SC945晶体管_2SC945中文资料_2SC945代换

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