TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)

丝印：WA；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件：137.97 Kbytes Page：5 Pages

Power transistor for high-speed switching applications

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件：137.97 Kbytes Page：5 Pages