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2SC5706价格
参考价格：￥1.7464
型号：2SC5706-E 品牌：ONSemi 备注：这里有2SC5706多少钱，2026年最近7天走势，今日出价，今日竞价，2SC5706批发/采购报价，2SC5706行情走势销售排行榜，2SC5706报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC5706 | POWER TRANSISTOR(5A,50V,15W) NPN Silicon Power Transistors DPAK Surface Mount Power Package The DPAK Power transistor is used by general purpose amplifiers, relay drives, lmap drives, motor drivers, and high speed switching applications. | MOSPEC 统懋 |   | |
2SC5706 | High Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, | SANYO 三洋 | | |
2SC5706 | NPN EPITAXIAL PLANAR TRANSISTOR Features: * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation | WEITRON | | |
2SC5706 | Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage, high-speed switching, high allowable power dissipation. Applications DC-DC converter, relay drivers, lamp drivers motor drivers. | FOSHAN 蓝箭电子 | | |
2SC5706 | Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | | |
2SC5706 | isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor | ISC 无锡固电 | | |
2SC5706 | 双极晶体管 | FOSHAN 蓝箭电子 | | |
2SC5706 | Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA | ONSEMI 安森美半导体 | | |
2SC5706 | isc Silicon NPN Power Transistors 文件：335.96 Kbytes Page：3 Pages | ISC 无锡固电 | | |
2SC5706 | High Current Switching Applications 文件：67.01 Kbytes Page：5 Pages | SANYO 三洋 | | |
2SC5706 | High-Current Switching Applications 文件：507.53 Kbytes Page：10 Pages | SANYO 三洋 | | |
NPN Silicon General Purpose Transistor FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation | SECOS 喜可士 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | | ||
NPN Silicon General Purpose Transistor | SECOS 喜可士 | | ||
Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS NPN 50V 5A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 5A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：424.78 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | |
2SC5706产品属性
- 类型
描述
- 型号
2SC5706
- 功能描述
两极晶体管 - BJT BIP NPN 5A 50V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
26+ |
N/A |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
SANYO/三洋 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
SANYO/三洋 |
24+ |
TO126 |
27950 |
郑重承诺只做原装进口现货 |
|||
onsemi |
25+ |
N/A |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
24+ |
TP-FA |
1400 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
SANYO |
24+ |
TO-252 |
47000 |
新进库存/原装 |
|||
SANYO |
1922+ |
SOT-252 |
6598 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SANYO |
24+/25+ |
270 |
原装正品现货库存价优 |
||||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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2SC5706规格书下载地址
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DdatasheetPDF页码索引
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