2SC5706价格

参考价格:¥1.7464

型号:2SC5706-E 品牌:ONSemi 备注:这里有2SC5706多少钱,2025年最近7天走势,今日出价,今日竞价,2SC5706批发/采购报价,2SC5706行情走势销售排行榜,2SC5706报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC5706

POWER TRANSISTOR(5A,50V,15W)

NPN Silicon Power Transistors DPAK Surface Mount Power Package The DPAK Power transistor is used by general purpose amplifiers, relay drives, lmap drives, motor drivers, and high speed switching applications.

MOSPEC

统懋

2SC5706

High Current Switching Applications

High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers,

SANYOSanyo Semicon Device

三洋三洋电机株式会社

2SC5706

NPN EPITAXIAL PLANAR TRANSISTOR

Features: * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation

WEITRON

2SC5706

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage, high-speed switching, high allowable power dissipation.  Applications DC-DC converter, relay drivers, lamp drivers motor drivers.

FOSHAN

蓝箭电子

2SC5706

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

ONSEMI

安森美半导体

2SC5706

isc Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor

ISC

无锡固电

2SC5706

High Current Switching Applications

文件:67.01 Kbytes Page:5 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

2SC5706

High-Current Switching Applications

文件:507.53 Kbytes Page:10 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

2SC5706

isc Silicon NPN Power Transistors

文件:335.96 Kbytes Page:3 Pages

ISC

无锡固电

NPN Silicon General Purpose Transistor

FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

ONSEMI

安森美半导体

Bipolar Transistor

文件:424.78 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:424.78 Kbytes Page:10 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:TRANS NPN 50V 5A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 5A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:424.78 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:424.78 Kbytes Page:10 Pages

ONSEMI

安森美半导体

2SC5706产品属性

  • 类型

    描述

  • 型号

    2SC5706

  • 功能描述

    两极晶体管 - BJT BIP NPN 5A 50V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-9 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
24+
TO-252
47000
新进库存/原装
SANYO
2016+
TO-252
6528
房间原装进口现货假一赔十
SANYO/三洋
24+
TO126
27950
郑重承诺只做原装进口现货
ONSEMI
24+
N/A
10000
只做原装,实单最低价支持
SANYO/三洋
23+
TO-252
189597
原厂授权代理,海外优势订货渠道。可提供大量库存,详
HIT
23+
SOT23
18786
原装正品,假一罚十
SANYO
23+
TS252
999999
原装正品现货量大可订货
SAN
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SANYO
18+
TO-251
85600
保证进口原装可开17%增值税发票
SANYO/三洋
24+
251-252
505348
免费送样原盒原包现货一手渠道联系

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