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2SC5706价格
参考价格:¥1.7464
型号:2SC5706-E 品牌:ONSemi 备注:这里有2SC5706多少钱,2025年最近7天走势,今日出价,今日竞价,2SC5706批发/采购报价,2SC5706行情走势销售排行榜,2SC5706报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SC5706 | POWER TRANSISTOR(5A,50V,15W) NPN Silicon Power Transistors DPAK Surface Mount Power Package The DPAK Power transistor is used by general purpose amplifiers, relay drives, lmap drives, motor drivers, and high speed switching applications. | MOSPEC 统懋 | ||
2SC5706 | High Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | ||
2SC5706 | NPN EPITAXIAL PLANAR TRANSISTOR Features: * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation | WEITRON | ||
2SC5706 | Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage, high-speed switching, high allowable power dissipation. Applications DC-DC converter, relay drivers, lamp drivers motor drivers. | FOSHAN 蓝箭电子 | ||
2SC5706 | Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | ||
2SC5706 | isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor | ISC 无锡固电 | ||
2SC5706 | High Current Switching Applications 文件:67.01 Kbytes Page:5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | ||
2SC5706 | High-Current Switching Applications 文件:507.53 Kbytes Page:10 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | ||
2SC5706 | isc Silicon NPN Power Transistors 文件:335.96 Kbytes Page:3 Pages | ISC 无锡固电 | ||
NPN Silicon General Purpose Transistor FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:424.78 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:424.78 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:TRANS NPN 50V 5A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 5A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:424.78 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:424.78 Kbytes Page:10 Pages | ONSEMI 安森美半导体 |
2SC5706产品属性
- 类型
描述
- 型号
2SC5706
- 功能描述
两极晶体管 - BJT BIP NPN 5A 50V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SANYO |
24+ |
TO-252 |
47000 |
新进库存/原装 |
|||
SANYO |
2016+ |
TO-252 |
6528 |
房间原装进口现货假一赔十 |
|||
SANYO/三洋 |
24+ |
TO126 |
27950 |
郑重承诺只做原装进口现货 |
|||
ONSEMI |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
SANYO/三洋 |
23+ |
TO-252 |
189597 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HIT |
23+ |
SOT23 |
18786 |
原装正品,假一罚十 |
|||
SANYO |
23+ |
TS252 |
999999 |
原装正品现货量大可订货 |
|||
SAN |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SANYO |
18+ |
TO-251 |
85600 |
保证进口原装可开17%增值税发票 |
|||
SANYO/三洋 |
24+ |
251-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
2SC5706规格书下载地址
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- 2SC5606-T1-A
- 2SC559200L
- 2SC5585TL
- 2SC5566-TD-E
- 2SC555600L
- 2SC5551AF-TD-E/BKN
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DdatasheetPDF页码索引
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