2SC5752晶体三极管数据表ic资料现货供应价格-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第390页 > 2SC57

2SC57晶体管资料

2SC57别名：2SC57三极管、2SC57晶体管、2SC57晶体三极管
2SC57生产厂家：日本日电公司
2SC57制作材料：Si-NPN
2SC57性质：射频/高频放大（HF）_TR_输出极（E）
2SC57封装形式：直插封装
2SC57极限工作电压：75V
2SC57最大电流允许值：0.5A
2SC57最大工作频率：110MHZ
2SC57引脚数：3
2SC57最大耗散功率：
2SC57放大倍数：
2SC57图片代号：D-112
2SC57vtest：75
2SC57htest：110000000
2SC57atest：0.5
2SC57wtest：0

2SC57代换 2SC57用什么型号代替：BD139,BD169,BD179,BD230,BD237,BD442,2SD1200,2SD1378,3DA14B,

2SC57价格

参考价格：￥1.7464

型号：2SC5706-E 品牌：ONSemi 备注：这里有2SC57多少钱，2025年最近7天走势，今日出价，今日竞价，2SC57批发/采购报价，2SC57行情走势销售排行榜，2SC57报价。

型号	功能描述	生产厂家企业	LOGO
2SC5700	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SC5700	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	RENESAS 瑞萨	RENESAS
2SC5700WB-TR-E	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: \|S21\|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	RENESAS 瑞萨	RENESAS
2SC5702	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz	RENESAS 瑞萨	RENESAS
2SC5702	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SC5702ZS-TL-E	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz	RENESAS 瑞萨	RENESAS
2SC5703	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5703	High-Speed Switching Applications DC-DC Converter Applications Strobe Applications •High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5703	TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5703_V01	High-Speed Switching Applications DC-DC Converter Applications Strobe Applications •High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5704	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5704-T3	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD	RENESAS 瑞萨	RENESAS
2SC5706	POWER TRANSISTOR(5A,50V,15W) NPN Silicon Power Transistors DPAK Surface Mount Power Package The DPAK Power transistor is used by general purpose amplifiers, relay drives, lmap drives, motor drivers, and high speed switching applications.	MOSPEC 统懋	MOSPEC
2SC5706	High Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers,	SANYO 三洋	SANYO
2SC5706	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706	NPN EPITAXIAL PLANAR TRANSISTOR Features: * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation	WEITRON	WEITRON
2SC5706	isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor	ISC 无锡固电	ISC
2SC5706	Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage, high-speed switching, high allowable power dissipation. Applications DC-DC converter, relay drivers, lamp drivers motor drivers.	FOSHAN 蓝箭电子	FOSHAN
2SC5706D	NPN Silicon General Purpose Transistor FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	SECOS 喜可士	SECOS
2SC5706-E	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706-H	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706-TL-E	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5706-TL-H	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel	ONSEMI 安森美半导体	ONSEMI
2SC5707	Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela	ONSEMI 安森美半导体	ONSEMI
2SC5707	High Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707	isc Silicon NPN Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA2040 APPLICATIONS • DC/DC converter,relay drivers,l	ISC 无锡固电	ISC
2SC5707-251	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707-252	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC5707-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707-E	Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela	ONSEMI 安森美半导体	ONSEMI
2SC5707-TL-E	Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela	ONSEMI 安森美半导体	ONSEMI
2SC5707-TL-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5707-TL-E	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver	SANYO 三洋	SANYO
2SC5709	DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strobes.	SANYO 三洋	SANYO
2SC5710	DC / DC Converter Applications PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applicat	SANYO 三洋	SANYO
2SC5710	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC5710	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC5710-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC5710-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC5712	TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5712	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5713	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5713	TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE= 400 to 1000 (IC= 0.5 A) • Low collector-emitter saturation voltage: VCE (sat)= 0.15 V (max) • High-speed switching: tf= 50 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5714	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5714	TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) • High-speed switching: tf = 90 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5716	TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf (2) = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.	TOSHIBA 东芝	TOSHIBA
2SC5717	Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO= 1500 V Low saturation voltage: VCE (sat)= 3 V (max) High speed: tf(2) = 0.1 µs (typ.)	TOSHIBA 东芝	TOSHIBA
2SC5720	MEDIUM POWER AMPLIFIER APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA)	TOSHIBA 东芝	TOSHIBA
2SC5722	NPN PLANAR SILICON TRANSISTOR Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.	SANYO 三洋	SANYO
2SC5725	Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing	Panasonic 松下	Panasonic
2SC5727	SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC5727 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. FEATURE ● High gain bandwidth product. fT=10.0GHz ● High gain, low noise. ● Can operate at low voltage. ● Super mini package for easy mounting APPLI	ISAHAYA 谏早电子	ISAHAYA
2SC5728	SMALL-SIGNAL TRANSISTOR DESCRIPTION 2SC5728 is a ultra super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. FEATURE ● High gain bandwidth product. fT=10.0GHz ● High gain, low noise. ● Can operate at low voltage. ● Super mini package for e	ISAHAYA 谏早电子	ISAHAYA
2SC5729	MEDIUM POWER TRANSISTOR (-30V,-0.5A) Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 Applications Small signal low frequency amplif	ROHM 罗姆	ROHM
2SC5736	NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2: Low phase distortion transistor suited	RENESAS 瑞萨	RENESAS
2SC5737	NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2: Low phase distortion transistor suited	RENESAS 瑞萨	RENESAS
2SC5737	NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD	RENESAS 瑞萨	RENESAS

2SC57产品属性

类型
描述
型号
2SC57
制造商
Renesas Electronics Corporation

2SC57供应商更多...

更新时间：2025-12-25 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SC5752-T1	NEC	24+	NA/	6250	原装现货,当天可交货,原型号开票	询价
深圳市明嘉莱科技有限公司	2SC5752-T1	NEC	24+	SOT343	880000	明嘉莱只做原装正品现货	询价
深圳市创新迹电子有限公司	2SC5752-T1B	NEC	22+	SOT343	20000	公司只有原装品质保证	询价
深圳市凌旭科技有限公司	2SC5752-T1	NEC	21+	SOT343	3000		询价
深圳市芯皇电子有限公司	2SC5752-T1	NEC	SOT343	23+	6000	原装现货有上库存就有货全网最低假一赔万	询价
中天科工半导体（深圳）有限公司	2SC5752-T1B	RENESAS/瑞萨	25+	SOT343	12521	RENESAS/瑞萨原装特价2SC5752-T1B即刻询购立享优惠#长期有货	询价
深圳市美思瑞电子科技有限公司	2SC5752-T1	NEC	22+	SOT343	12245	现货,原厂原装假一罚十!	询价
深圳市华斯顿科技有限公司	2SC5752-T1	NEC	25+23+	SOT343	37922	绝对原装正品全新进口深圳现货	询价
贸泽芯城（深圳）电子科技有限公司	2SC5752	NEC	23+	SOT-343	33000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市一线半导体有限公司	2SC5752	SANYO	24+		30000		询价

2SC57芯片相关品牌

2SC57规格书下载地址

2SC57参数引脚图相关

2SC57数据表相关新闻

2SD1616AG-TO92B-G-TG_UTC代理商
2SD1616AG-TO92B-G-TG_UTC代理商
2023-2-27
2SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-30
2SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-30
2SC5299
2SC5299，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SC5826中文资料库
2SC5826中文资料库
2019-2-15
2SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SC57晶体管资料

2SC57价格

2SC57产品属性

2SC57供应商更多...

2SC57芯片相关品牌

2SC57规格书下载地址

2SC57参数引脚图相关

2SC57数据表相关新闻

2SD1616AG-TO92B-G-TG_UTC代理商

2SC5569G-SOT89R-TG

2SC5353BL-TO126CK-TG

2SC5299

2SC5826中文资料库

2SC945_2SC945晶体管_2SC945中文资料_2SC945代换

DdatasheetPDF页码索引