For Low Frequency Amplify Application Sillcon Npn Epitaxial Type

[Isahaya Electronics] DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini packag

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

[Isahaya Electronics] DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. APPLICATION

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage • High Switching Speed • Low Saturation Voltage • Wide area of safe operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Character display horizontal deflection output

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO)

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

SILICON EPITAXIAL

Overview 2SC5625 Ultra-compact resin-sealed silicon NPN epitaxy Type transistor, designed and manufactured for high breakdown voltage. Widely used for downsizing of sets and high-density mounting You. Special length • Ultra-small outer shape enables miniaturization of sets and high-density moun

SMALL-SIGNAL TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy m

TRANSISTOR

[Isahaya] For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type)

TRANSISTOR

DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial type transistor. It is designed for high frequency amplify application. FEATURE • Super mini package for easy mounting • High gain band width product APPLICATION Small type machine high frequency a

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • Super compact package; (1.6 × 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V)

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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晶体管（PNP、NPN）

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：188.44 Kbytes Page：4 Pages

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

高频三极管

High gain bandwidth product

文件：46.05 Kbytes Page：8 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION

文件：100.87 Kbytes Page：2 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION

文件：100.87 Kbytes Page：2 Pages

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

文件：217.64 Kbytes Page：10 Pages

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

文件：217.64 Kbytes Page：10 Pages