Overview

2SC5625 Ultra-compact resin-sealed silicon NPN epitaxy Type transistor, designed and manufactured for high breakdown voltage. Widely used for downsizing of sets and high-density mounting You.

Special length

• Ultra-small outer shape enables miniaturization of sets and high-density mounting

• Low collector saturation voltage VCE(sat)=0.5V max

Use

For hybrid ICs and DC-DC converters

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