TRANSISTOR (NPN)

[WEJ ELECTRONIC CO.] FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Large current capacity and wide ASO Applications Small signal general purpose amplifier applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Amplifier Transistor

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：C536；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

Transistors

小信号晶体管

晶体管

Low Level and General Purpose Amplifiers

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NPN TRIPLE DIFFUSED TYPE (COLOR TV CHROM OUTPUT APPLICATIONS)

Transistor Silicon NPN Triple Diffused Type Color TV Chroma Output Applications • High voltage: VCEO= 300 V • Small collector output capacitance: Cob= 5.0 pF (typ.) • High transition frequency: fT= 100 MHz (typ.)

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tf= 0.5 µs (max) (IC= 1.2 A) • High breakdown voltage: VCEO= 800 V • High DC current gain: hFE= 15 (min) (IC= 0.15 A)

Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)

For low-voltage high-frequency amplification ■Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed: tr= 0.5 μs (max), tf= 0.3 μs (max) (IC= 0.8 A) • High breakdown voltage: VCEO= 450 V • High DC current gain: hFE= 20 (min) (IC= 0.2 A)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES • High fT 14 GHz TYP. • High gain | S21e | 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA • NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA • 6-pin small mini mold package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION

FEATURES • High fT 14 GHz TYP. • High gain | S21e |2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA • NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA • 6-pin small mini mold package

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Large current capacity and wide ASO Applications Small signal general purpose amplifier applications.

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large current capacity and wide ASO. Applications Small signal general purpose amplifier applications.

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large current capacity and wide ASO. Applications Small signal general purpose amplifier applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large Current Capacity and Wide ASO. APPLICATIONS ● Capable of Being Used in The Low Frequency to High Frequency Range.

Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Features · Large current capacity and wide ASO.

Bipolar Transistor

Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Features • Large current capacity and wide ASO Applications • Capable of being used in the low frequency to high frequency range

Bipolar Transistor

Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Features • Large current capacity and wide ASO Applications • Capable of being used in the low frequency to high frequency range

Bipolar Transistor

Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Features • Large current capacity and wide ASO Applications • Capable of being used in the low frequency to high frequency range

丝印代码：C536；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

High-Voltage Switching Applications

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High-Voltage Switching Applications

文件：147.96 Kbytes Page：5 Pages

Silicon NPN Triple Diffused Type

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Silicon NPN Triple Diffused Type

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封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-92S Plastic-Encapsulate Transistors

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.