2SC536晶体管资料

  • 2SC536别名:2SC536三极管、2SC536晶体管、2SC536晶体三极管

  • 2SC536生产厂家:日本三洋公司

  • 2SC536制作材料:Si-NPN

  • 2SC536性质:通用型 (Uni)

  • 2SC536封装形式:直插封装

  • 2SC536极限工作电压:55V

  • 2SC536最大电流允许值:0.1A

  • 2SC536最大工作频率:180MHZ

  • 2SC536引脚数:3

  • 2SC536最大耗散功率:0.2W

  • 2SC536放大倍数

  • 2SC536图片代号:A-39

  • 2SC536vtest:55

  • 2SC536htest:180000000

  • 2SC536atest:0.1

  • 2SC536wtest:0.2

  • 2SC536代换 2SC536用什么型号代替:BC107,BC171,BC183,BC207,BC237,BC547,BF254,BF255,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC536

TRANSISTOR(NPN)

[WEJELECTRONICCO.] FEATURES Powerdissipation PCM:400mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SC536

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features LargecurrentcapacityandwideASO Applications Smallsignalgeneralpurposeamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC536

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeAmplifierTransistor

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC536

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:400mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN
2SC536

TO-92Plastic-EncapsulateTransistors

FEATURES GeneralPurposeAmplifierTransistor

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC536

LowLevelandGeneralPurposeAmplifiers

文件:84.74 Kbytes Page:1 Pages

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

NPNTRIPLEDIFFUSEDTYPE(COLORTVCHROMOUTPUTAPPLICATIONS)

TransistorSiliconNPNTripleDiffusedType ColorTVChromaOutputApplications •Highvoltage:VCEO=300V •Smallcollectoroutputcapacitance:Cob=5.0pF(typ.) •Hightransitionfrequency:fT=100MHz(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS)

High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Excellentswitchingtimes:tf=0.5µs(max)(IC=1.2A) •Highbreakdownvoltage:VCEO=800V •HighDCcurrentgain:hFE=15(min)(IC=0.15A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNepitaxialplanertype(Forlow-voltagehigh-frequencyamplification)

Forlow-voltagehigh-frequencyamplification ■Features ●HightransitionfrequencyfT. ●SmallcollectoroutputcapacitanceCob. ●SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS)

High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeed:tr=0.5μs(max),tf=0.3μs(max)(IC=0.8A) •Highbreakdownvoltage:VCEO=450V •HighDCcurrentgain:hFE=20(min)(IC=0.2A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORFOR MICROWAVEAMPLIFICATION FEATURES •HighfT 14GHzTYP. •Highgain |S21e|2=14dBTYP. @f=2GHz,VCE=3V,IC=10mA •NF=1.3dB,@f=2GHz,VCE=3V,IC=3mA •6-pinsmallminimoldpackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVEAMPLIFICATION

FEATURES •HighfT 14GHzTYP. •Highgain |S21e|2=14dBTYP. @f=2GHz,VCE=3V,IC=10mA •NF=1.3dB,@f=2GHz,VCE=3V,IC=3mA •6-pinsmallminimoldpackage

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features LargecurrentcapacityandwideASO Applications Smallsignalgeneralpurposeamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LargecurrentcapacityandwideASO. Applications Smallsignalgeneralpurposeamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LargecurrentcapacityandwideASO. Applications Smallsignalgeneralpurposeamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LargeCurrentCapacityandWideASO. APPLICATIONS ●CapableofBeingUsedinTheLowFrequencytoHigh FrequencyRange.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

Low-FrequencyGeneral-PurposeAmplifierApplications

Low-FrequencyGeneral-PurposeAmplifierApplications Applications ·Capableofbeingusedinthelowfrequencytohighfrequencyrange. Features ·LargecurrentcapacityandwideASO.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistor

BipolarTransistor (–)50V,(–)150mA,LowVCE(sat)(PNP)NPNSingleNPA-WA Features •LargecurrentcapacityandwideASO Applications •Capableofbeingusedinthelowfrequencytohighfrequencyrange

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor

BipolarTransistor (–)50V,(–)150mA,LowVCE(sat)(PNP)NPNSingleNPA-WA Features •LargecurrentcapacityandwideASO Applications •Capableofbeingusedinthelowfrequencytohighfrequencyrange

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor

BipolarTransistor (–)50V,(–)150mA,LowVCE(sat)(PNP)NPNSingleNPA-WA Features •LargecurrentcapacityandwideASO Applications •Capableofbeingusedinthelowfrequencytohighfrequencyrange

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TO-92Plastic-EncapsulateTransistors

FEATURES GeneralPurposeAmplifierTransistor

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

High-VoltageSwitchingApplications

文件:147.96 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingApplications

文件:147.96 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedType

文件:133.52 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedType

文件:133.52 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:TO-226-3,TO-92-3 长基体(成形引线) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-226-3,TO-92-3 长基体(成形引线) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TO-92SPlastic-EncapsulateTransistors

文件:598.71 Kbytes Page:3 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

2SC536产品属性

  • 类型

    描述

  • 型号

    2SC536

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    High-Voltage Switching Applications

更新时间:2025-7-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
24+
NA/
5050
原装现货,当天可交货,原型号开票
TOSHIBA
24+
TO-220F
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
TOSHIBA
24+
TO-220F
9800
一级代理/全新原装现货/长期供应!
TOSHIBA/东芝
25+
TO92
54648
百分百原装现货 实单必成 欢迎询价
SANYO/三洋
25+
TO-92(TP)
880000
明嘉莱只做原装正品现货
TOSHIBA
10+
TO-220F
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
2024
TO-126F
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
CJ/长电
21+
TO-92
30000
百域芯优势 实单必成 可开13点增值税发票
TOSHIBA
25+23+
TO-220F
15556
绝对原装正品全新进口深圳现货
SANYO
1822+
TO-92S
6852
只做原装正品假一赔十为客户做到零风险!!

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