NPN EPITAXIAL SILICON TRANSISTOR FOR

MICROWAVE AMPLIFICATION

FEATURES

• High fT

14 GHz TYP.

• High gain

| S21e | 2 = 14 dB TYP.

@f = 2 GHz, VCE = 3 V, IC = 10 mA

• NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA

• 6-pin small mini mold package