Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Features · Large current capacity and wide ASO.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large Current Capacity and Wide ASO. APPLICATIONS ● Capable of Being Used in The Low Frequency to High Frequency Range.

晶体管

NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

Bipolar Transistor

Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Features • Large current capacity and wide ASO Applications • Capable of being used in the low frequency to high frequency range

Bipolar Transistor

Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Features • Large current capacity and wide ASO Applications • Capable of being used in the low frequency to high frequency range

Bipolar Transistor

Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Features • Large current capacity and wide ASO Applications • Capable of being used in the low frequency to high frequency range

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANSISTOR (NPN)

[WEJ ELECTRONIC CO.] FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Large current capacity and wide ASO Applications Small signal general purpose amplifier applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Amplifier Transistor

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.