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2SC535晶体管资料
2SC535别名:2SC535三极管、2SC535晶体管、2SC535晶体三极管
2SC535生产厂家:日本日立公司
2SC535制作材料:Si-NPN
2SC535性质:调频 (FM)_甚高频 (VHF)_前置放大 (V)
2SC535封装形式:直插封装
2SC535极限工作电压:
2SC535最大电流允许值:
2SC535最大工作频率:700MHZ
2SC535引脚数:3
2SC535最大耗散功率:
2SC535放大倍数:
2SC535图片代号:A-39
2SC535vtest:0
2SC535htest:700000000
- 2SC535atest:0
2SC535wtest:0
2SC535代换 2SC535用什么型号代替:BF199,BF224,BF225,BF310,BF311,BF314,BF373,BF502,BF505,3DG112B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC535 | SiliconNPNEpitaxialPlanar Application VHFamplifier,mixer,localoscillator | HitachiHitachi Semiconductor 日立日立公司 | ||
2SC535 | SiliconNPNEpitaxialPlanar Application VHFamplifier,mixer,localoscillator | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | ||
2SC535 | TRANSISTOR 文件:192.33 Kbytes Page:3 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ||
NPNTRIPLEDIFFUSEDTYPE(HIGHSPEEDSWITCHINGAPPLICATIONSFORBATTERYCHARGERANDPOWERSUPPLY) High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeed:tr=0.5μs(max),tf=0.3μs(max)(IC=0.8A) •Highbreakdownvoltage:VCEO=450V •HighDCcurrentgain:hFE=20(min)(IC=0.2A) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS) SwitchingRegulatorandHigh-VoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.5μs(max),tf=0.3μs(max)(IC=4A) •Highbreakdownvoltage:VCEO=400V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) ·HighSwitchingSpeed ·HighReliability APPLICATIONS ·Switchingregulatorandhighvoltageswitchingapplications. ·HighspeedDC-DCconverterapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS) SwitchingRegulatorandHighVoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.7μs(max),tf=0.5μs(max) •Highcollectorsbreakdownvoltage:VCEO=800V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
Collector?밇mitterSustainingVoltage:VCEO(SUS)=800V(Min.) DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=800V(Min.) •LowCollectorSaturationVoltage :VCE(sat)=1V(Max)@IC=1.2A APPLICATIONS •Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,SWITCHINGREGULATOR,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS) High-SpeedandHigh-VoltageSwitchingApplications SwitchingRegulatorApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.7μs(max) tf=0.5μs(max)(IC=2A) •Highbreakdownvoltage:VCEO=800 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) •HighSwitchingSpeed APPLICATIONS •Highspeedandhighvoltageswitchingapplications. •Switchingregulatorapplications. •HighspeedDC-DCconverterapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNPlastic-EncapsulateTransistor FEATURES *ExcellenthFELinearity *LowNoise | WEITRON Weitron Technology | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) •HighSwitchingSpeed APPLICATIONS •Highspeedandhighvoltageswitchingapplications. •Switchingregulatorapplications. •HighspeedDC-DCconverterapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNTripleDiffusedMesaType Features ●Excellentswitchingtimes:tr=0.5μs(max),tf=0.3μs(max) ●Highcollectorbreakdownvoltage:VCEO=400V ●HighDCcurrentgain:hFE=20(min) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNTRIPLEDIFFUSEDMESATYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS) HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Excellentswitchingtimes:tr=0.5µs(max),tf=0.3µs(max) •Highcollectorbreakdownvoltage:VCEO=400V •HighDCcurrentgain:hFE=20(min) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS) HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Excellentswitchingtimes:tf=0.5µs(max)(IC=1.2A) •Highcollectorsbreakdownvoltage:VCEO=800V •HighDCcurrentgain:hFE=15(min)(IC=0.15A) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=800V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.0V(Max.)@IC=1.2A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=230V •Complementaryto2SA1986 •Suitableforusein80-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1986 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelity audiofrequencyamplifieroutputstage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1986 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1986 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1987 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1987 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=230V •Complementaryto2SA1987 •Suitableforusein100-Whighfidelityaudioamplifier’soutputstage. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialPlanar Application VHFamplifier,mixer,localoscillator | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxialPlanar Application VHFamplifier,mixer,localoscillator | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNTripleDiffusedTypeHigh-VoltageSwitchingApplications 文件:136.78 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNTripleDiffusedTypeHigh-VoltageSwitchingApplications 文件:136.78 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNTripleDiffusedTypeSwitchingRegulatorandHigh-VoltageSwitchingApplications 文件:131.84 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNPowerTransistor 文件:130.18 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNTripleDiffusedTypeSwitchingRegulatorandHigh-VoltageSwitchingApplications 文件:131.84 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHighVoltageSwitchingApplications 文件:146.74 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HIGHVOLTAGENPNTRANSISTOR 文件:266.38 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR 文件:266.98 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHighVoltageSwitchingApplications 文件:146.74 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HIGHVOLTAGENPNTRANSISTOR 文件:266.38 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR 文件:266.98 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR 文件:278.05 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGENPNTRANSISTOR 文件:256.62 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |
2SC535产品属性
- 类型
描述
- 型号
2SC535
- 制造商
Panasonic Industrial Company
- 功能描述
DISCD TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
4850 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA |
23+ |
TO-220 |
20000 |
全新原装假一赔十 |
|||
HITACHI |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
TOSHIBA/东芝 |
25+ |
TO-3PL |
20300 |
TOSHIBA/东芝原装特价2SC5359即刻询购立享优惠#长期有货 |
|||
TOSHIBA/东芝 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
25+ |
TO-3PL |
65428 |
百分百原装现货 实单必成 |
|||
TOSHIBA |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOS |
23+ |
TO-3PL |
5000 |
专做原装正品,假一罚百! |
|||
TOSHIBA |
24+ |
TO-220F |
27500 |
原装正品,价格最低! |
|||
TOSHIBA |
23+ |
SOT-323 |
9526 |
2SC535规格书下载地址
2SC535参数引脚图相关
- 500t
- 5000
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- 4899
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- 4735
- 47301
- 4591
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- 303c
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- 2SC537FP
- 2SC5379
- 2SC5378
- 2SC5370
- 2SC537
- 2SC536S
- 2SC536N
- 2SC536M
- 2SC536K
- 2SC5369
- 2SC5368
- 2SC5363
- 2SC5361
- 2SC5360
- 2SC536
- 2SC535A
- 2SC5359
- 2SC5358
- 2SC5357
- 2SC5356
- 2SC5355
- 2SC5354
- 2SC5353
- 2SC5352
- 2SC5351
- 2SC5350
- 2SC5347
- 2SC5346
- 2SC5345
- 2SC5344
- 2SC5343
- 2SC5342
- 2SC5341
- 2SC5340
- 2SC534
- 2SC5339
- 2SC5338
- 2SC5337
- 2SC5336
- 2SC5335
- 2SC5333
- 2SC5332
- 2SC5331
- 2SC5330
- 2SC533
- 2SC5329
- 2SC5328
- 2SC5327
- 2SC5324
- 2SC5323
- 2SC5322(F)
- 2SC5322
- 2SC5321
- 2SC5320
- 2SC5319
2SC535数据表相关新闻
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2SC5353BL-TO126CK-TG
2023-1-302SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5015-T1
https://hch01.114ic.com/
2020-11-132SC5299
2SC5299,全新原装当天发货或门市自取0755-82732291.
2020-4-242SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-222SC5826中文资料库
2SC5826中文资料库
2019-2-15
DdatasheetPDF页码索引
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