2SC535晶体管资料

  • 2SC535别名:2SC535三极管、2SC535晶体管、2SC535晶体三极管

  • 2SC535生产厂家:日本日立公司

  • 2SC535制作材料:Si-NPN

  • 2SC535性质:调频 (FM)_甚高频 (VHF)_前置放大 (V)

  • 2SC535封装形式:直插封装

  • 2SC535极限工作电压

  • 2SC535最大电流允许值

  • 2SC535最大工作频率:700MHZ

  • 2SC535引脚数:3

  • 2SC535最大耗散功率

  • 2SC535放大倍数

  • 2SC535图片代号:A-39

  • 2SC535vtest:0

  • 2SC535htest:700000000

  • 2SC535atest:0

  • 2SC535wtest:0

  • 2SC535代换 2SC535用什么型号代替:BF199,BF224,BF225,BF310,BF311,BF314,BF373,BF502,BF505,3DG112B,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC535

Silicon NPN Epitaxial Planar

Application VHF amplifier, mixer, local oscillator

HitachiHitachi Semiconductor

日立日立公司

2SC535

Silicon NPN Epitaxial Planar

Application VHF amplifier, mixer, local oscillator

RENESAS

瑞萨

2SC535

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SC535

小信号晶体管

STMICROELECTRONICS

意法半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY)

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V • High DC current gain: hFE = 20 (min) (IC = 0.2 A)

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 4 A) • High breakdown voltage: VCEO = 400 V

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Collector?밇mitter Sustaining Voltage: VCEO(SUS) = 800V(Min.)

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) • Low Collector Saturation Voltage : VCE(sat) =1V(Max) @ IC= 1.2A APPLICATIONS • Designed for use in lighting applications and low cost switch-mode power supplies.

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) • High collectors breakdown voltage: VCEO = 800 V

TOSHIBA

东芝

HIGH VOLTAGE NPN TRANSISTOR

DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V

UTC

友顺

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr= 0.7 μs (max) tf= 0.5 μs (max) (IC= 2 A) • High breakdown voltage: VCEO= 800

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) • High Switching Speed APPLICATIONS • High speed and high voltage switching applications. • Switching regulator applications. • High speed DC-DC converter applications.

ISC

无锡固电

NPN Plastic-Encapsulate Transistor

FEATURES * Excellent hFE Linearity * Low Noise

WEITRON

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) • High Switching Speed APPLICATIONS • High speed and high voltage switching applications. • Switching regulator applications. • High speed DC-DC converter applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Triple Diffused Mesa Type

Features ● Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) ● High collector breakdown voltage: VCEO = 400 V ● High DC current gain: hFE = 20 (min)

KEXIN

科信电子

NPN TRIPLE DIFFUSED MESA TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min)

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) • High collectors breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.15 A)

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1.2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applicati

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO= 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION · With TO-3P(I) package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

JMNIC

锦美电子

NPN TRIPLE DIFFUSED TYPE (POWERAMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO= 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage.

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Planar

Application VHF amplifier, mixer, local oscillator

RENESAS

瑞萨

Silicon NPN Epitaxial Planar

Application VHF amplifier, mixer, local oscillator

RENESAS

瑞萨

Silicon NPN Triple Diffused Type High-Voltage Switching Applications

文件:136.78 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Type High-Voltage Switching Applications

文件:136.78 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

文件:131.84 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon NPN Power Transistor

文件:130.18 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

文件:131.84 Kbytes Page:4 Pages

TOSHIBA

东芝

HIGH VOLTAGE NPN TRANSISTOR

文件:266.38 Kbytes Page:4 Pages

UTC

友顺

Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications

文件:146.74 Kbytes Page:5 Pages

TOSHIBA

东芝

HIGH VOLTAGE NPN TRANSISTOR

文件:266.98 Kbytes Page:4 Pages

UTC

友顺

Bipolar Transistor

UTC

友顺

Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications

文件:146.74 Kbytes Page:5 Pages

TOSHIBA

东芝

HIGH VOLTAGE NPN TRANSISTOR

文件:266.38 Kbytes Page:4 Pages

UTC

友顺

HIGH VOLTAGE NPN TRANSISTOR

文件:266.98 Kbytes Page:4 Pages

UTC

友顺

2SC535产品属性

  • 类型

    描述

  • 型号

    2SC535

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    DISCD TRANSISTOR

更新时间:2025-11-20 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
22+
SOT-252
100000
代理渠道/只做原装/可含税
HITACHI/日立
24+
NA/
4850
原装现货,当天可交货,原型号开票
TOSHIBA/东芝
25+
TO-3PL
65428
百分百原装现货 实单必成
UTC(友顺)
24+/25+
TO-252-2(DPAK)
2500
UTC原厂一级代理商,价格优势!
TOSHIBA/东芝
25+
TO-3PL
20300
TOSHIBA/东芝原装特价2SC5359即刻询购立享优惠#长期有货
TOSHIBA
24+/25+
114
原装正品现货库存价优
TOSHIBA/东芝
21+
TO252
1117
TOSHIBA/东芝
2450+
TO-126
9850
只做原装正品现货或订货假一赔十!
TOSHIBA
24+
TO-3P
5000
全新原装正品,现货销售
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百

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