2SC535晶体管资料

  • 2SC535别名:2SC535三极管、2SC535晶体管、2SC535晶体三极管

  • 2SC535生产厂家:日本日立公司

  • 2SC535制作材料:Si-NPN

  • 2SC535性质:调频 (FM)_甚高频 (VHF)_前置放大 (V)

  • 2SC535封装形式:直插封装

  • 2SC535极限工作电压

  • 2SC535最大电流允许值

  • 2SC535最大工作频率:700MHZ

  • 2SC535引脚数:3

  • 2SC535最大耗散功率

  • 2SC535放大倍数

  • 2SC535图片代号:A-39

  • 2SC535vtest:0

  • 2SC535htest:700000000

  • 2SC535atest:0

  • 2SC535wtest:0

  • 2SC535代换 2SC535用什么型号代替:BF199,BF224,BF225,BF310,BF311,BF314,BF373,BF502,BF505,3DG112B,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC535

SiliconNPNEpitaxialPlanar

Application VHFamplifier,mixer,localoscillator

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SC535

SiliconNPNEpitaxialPlanar

Application VHFamplifier,mixer,localoscillator

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC535

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

NPNTRIPLEDIFFUSEDTYPE(HIGHSPEEDSWITCHINGAPPLICATIONSFORBATTERYCHARGERANDPOWERSUPPLY)

High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeed:tr=0.5μs(max),tf=0.3μs(max)(IC=0.8A) •Highbreakdownvoltage:VCEO=450V •HighDCcurrentgain:hFE=20(min)(IC=0.2A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS)

SwitchingRegulatorandHigh-VoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.5μs(max),tf=0.3μs(max)(IC=4A) •Highbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) ·HighSwitchingSpeed ·HighReliability APPLICATIONS ·Switchingregulatorandhighvoltageswitchingapplications. ·HighspeedDC-DCconverterapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS)

SwitchingRegulatorandHighVoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.7μs(max),tf=0.5μs(max) •Highcollectorsbreakdownvoltage:VCEO=800V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HIGHVOLTAGENPNTRANSISTOR

DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

Collector?밇mitterSustainingVoltage:VCEO(SUS)=800V(Min.)

DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=800V(Min.) •LowCollectorSaturationVoltage :VCE(sat)=1V(Max)@IC=1.2A APPLICATIONS •Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

HIGHVOLTAGENPNTRANSISTOR DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=750V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

DESCRIPTION SwitchingRegulatorandHighVoltageSwitchingApplicationsHigh-SpeedDC-DCConverterApplications FEATURES *Excellentswitchingtimes:tR=0.7μs(MAX),tF=0.5μs(MAX) *Highcollectorsbreakdownvoltage:VCEO=700V

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,SWITCHINGREGULATOR,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS)

High-SpeedandHigh-VoltageSwitchingApplications SwitchingRegulatorApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.7μs(max) tf=0.5μs(max)(IC=2A) •Highbreakdownvoltage:VCEO=800

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) •HighSwitchingSpeed APPLICATIONS •Highspeedandhighvoltageswitchingapplications. •Switchingregulatorapplications. •HighspeedDC-DCconverterapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNPlastic-EncapsulateTransistor

FEATURES *ExcellenthFELinearity *LowNoise

WEITRON

Weitron Technology

WEITRON

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) •HighSwitchingSpeed APPLICATIONS •Highspeedandhighvoltageswitchingapplications. •Switchingregulatorapplications. •HighspeedDC-DCconverterapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNTripleDiffusedMesaType

Features ●Excellentswitchingtimes:tr=0.5μs(max),tf=0.3μs(max) ●Highcollectorbreakdownvoltage:VCEO=400V ●HighDCcurrentgain:hFE=20(min)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNTRIPLEDIFFUSEDMESATYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS)

HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Excellentswitchingtimes:tr=0.5µs(max),tf=0.3µs(max) •Highcollectorbreakdownvoltage:VCEO=400V •HighDCcurrentgain:hFE=20(min)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS)

HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Excellentswitchingtimes:tf=0.5µs(max)(IC=1.2A) •Highcollectorsbreakdownvoltage:VCEO=800V •HighDCcurrentgain:hFE=15(min)(IC=0.15A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=800V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.0V(Max.)@IC=1.2A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=230V •Complementaryto2SA1986 •Suitableforusein80-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1986 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelity audiofrequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1986 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1986 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1987 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1987 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=230V •Complementaryto2SA1987 •Suitableforusein100-Whighfidelityaudioamplifier’soutputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialPlanar

Application VHFamplifier,mixer,localoscillator

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialPlanar

Application VHFamplifier,mixer,localoscillator

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNTripleDiffusedTypeHigh-VoltageSwitchingApplications

文件:136.78 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedTypeHigh-VoltageSwitchingApplications

文件:136.78 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedTypeSwitchingRegulatorandHigh-VoltageSwitchingApplications

文件:131.84 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistor

文件:130.18 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNTripleDiffusedTypeSwitchingRegulatorandHigh-VoltageSwitchingApplications

文件:131.84 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHighVoltageSwitchingApplications

文件:146.74 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HIGHVOLTAGENPNTRANSISTOR

文件:266.38 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

文件:266.98 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHighVoltageSwitchingApplications

文件:146.74 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HIGHVOLTAGENPNTRANSISTOR

文件:266.38 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

文件:266.98 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

文件:278.05 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGENPNTRANSISTOR

文件:256.62 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SC535产品属性

  • 类型

    描述

  • 型号

    2SC535

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    DISCD TRANSISTOR

更新时间:2025-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
4850
原装现货,当天可交货,原型号开票
TOSHIBA
23+
TO-220
20000
全新原装假一赔十
HITACHI
24+
TO-92
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
TOSHIBA/东芝
25+
TO-3PL
20300
TOSHIBA/东芝原装特价2SC5359即刻询购立享优惠#长期有货
TOSHIBA/东芝
22+
SOT-252
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
25+
TO-3PL
65428
百分百原装现货 实单必成
TOSHIBA
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
TOS
23+
TO-3PL
5000
专做原装正品,假一罚百!
TOSHIBA
24+
TO-220F
27500
原装正品,价格最低!
TOSHIBA
23+
SOT-323
9526

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