isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) • High Switching Speed APPLICATIONS • High speed and high voltage switching applications. • Switching regulator applications. • High speed DC-DC converter applications.

NPN Plastic-Encapsulate Transistor

FEATURES * Excellent hFE Linearity * Low Noise

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) • High Switching Speed APPLICATIONS • High speed and high voltage switching applications. • Switching regulator applications. • High speed DC-DC converter applications.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr= 0.7 μs (max) tf= 0.5 μs (max) (IC= 2 A) • High breakdown voltage: VCEO= 800

Power transistor for high-speed switching applications

Application Scope：Switching regulators\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 日本 Collector Current IC 5 A \nCollector power dissipation PC 100 W \nCollector-Base Voltage VCBO 900 V \nCollector-emitter voltage VCEO 800 V ;

包装：散装 描述：TRANSISTOR NPN TO-3PN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：TRANSISTOR NPN TO-3PN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications

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