2SC5192-T2晶体三极管技术资料参数现货供应价格-IC资料网

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晶体管

2SC519晶体管资料

2SC519别名：2SC519三极管、2SC519晶体管、2SC519晶体三极管
2SC519生产厂家：日本东芝公司
2SC519制作材料：Si-NPN
2SC519性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SC519封装形式：直插封装
2SC519极限工作电压：110V
2SC519最大电流允许值：7A
2SC519最大工作频率：10MHZ
2SC519引脚数：2
2SC519最大耗散功率：50W
2SC519放大倍数：
2SC519图片代号：E-44
2SC519vtest：110
2SC519htest：10000000
2SC519atest：7
2SC519wtest：50

2SC519代换 2SC519用什么型号代替：BD245C,BD550,BU109,BU110,BU210,BUY20,BUY77,2N4348,2SD1046,3DK206C,

型号	功能描述	生产厂家&企业	LOGO
2SC5190	Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification) ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	Panasonic 松下	Panasonic
2SC5191	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5191	Low Voltage Operation ,Low Phase Distortion DESCRIPTION • Low Voltage Operation ,Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA APPLICATIONS • Designed for use in low-noise and small s	ISC 无锡固电	ISC
2SC5191	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum	RENESAS 瑞萨	RENESAS
2SC5191-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5191-T1B	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum	RENESAS 瑞萨	RENESAS
2SC5191-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5192	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5192	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192R	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192-T1	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5192-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5192-T2	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5193	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Ma	RENESAS 瑞萨	RENESAS
2SC5193	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5193-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5193-T1	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Ma	RENESAS 瑞萨	RENESAS
2SC5193-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5194	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package	NEC 瑞萨	NEC
2SC5194	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA •	RENESAS 瑞萨	RENESAS
2SC5194-T1	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA •	RENESAS 瑞萨	RENESAS
2SC5194-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package	NEC 瑞萨	NEC
2SC5194-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package	NEC 瑞萨	NEC
2SC5194-T2	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA •	RENESAS 瑞萨	RENESAS
2SC5195	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA Supercom	RENESAS 瑞萨	RENESAS
2SC5195	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package	NEC 瑞萨	NEC
2SC5195-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package	NEC 瑞萨	NEC
2SC5196	NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1939	WINGS 永盛电子	WINGS
2SC5196	TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5196	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5196_V01	TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5197	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5197	Silicon NPN Power Transistors DESCRIPTION ··With TO-3P(I) package ·Complement to type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SC5197	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SC5197	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • Complement to type 2SA1941 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SC5198	isc Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A • Good Linearity of hFE • Complement to Type 2SA1941 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SC5198	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Power Amplifier Applications FEATURES ● High collector voltage˖ VCEO=140V (min) ● Complementary to 2SA1941 ● Recommended for 70-W high-fidelity audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SC5198	TO-3P Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Collector Saturation Voltage ● Good Linearity of hFE APPLICATIONS ● Power Amplifier Applications ● Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Applications	JIANGSU 长电科技	JIANGSU
2SC5198	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5198	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Silicon NPN transistor in a TO-3P Plastic Package. Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SA1941. Applications Power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SC5198B	Silicon NPN triple diffusion planar transistor FEATURES • High breakdown voltage, VCEO =140V (min) • Complementary to 2SA1941B • TO-3P package which can be installed to the heat sink with one screw APPLICATIONS • Suitable for use in 70W high fidelity audio amplifier’s output stage	NELLSEMI 尼尔半导体	NELLSEMI
2SC5198OQ	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198-OQ	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198-O-W-N-B	Power Amplifier Applications FEATURES ● High collector voltage˖ VCEO=140V (min) ● Complementary to 2SA1941 ● Recommended for 70-W high-fidelity audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SC5198-R	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5199	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5199	Silicon NPN Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SA1942 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage	ISC 无锡固电	ISC
2SC5199	Silicon NPN Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SA1942 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SC5199	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.	TOSHIBA 东芝	TOSHIBA
2SC5196	isc Silicon NPN Power Transistor 文件：253.22 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SC5196	Silicon NPN Power Transistors 文件：162.24 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SC5196	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 文件：147.74 Kbytes Page：2 Pages	TOSHIBA 东芝	TOSHIBA
2SC5196	Silicon NPN Power Transistors 文件：163.9 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SC5196_06	Silicon NPN Triple Diffused Type Power Amplifier Applications 文件：120.45 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5197	Silicon NPN Triple Diffused Type Power Amplifier Applications 文件：121.04 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA

2SC519产品属性

类型
描述
型号
2SC519
制造商
Distributed By MCM
功能描述
SUB ONLY TRANSISTOR TO-3 110V 7A 50W BEC

2SC519供应商更多...

更新时间：2025-8-9 12:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市赛美科科技有限公司	2SC5193	NEC		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市盈慧通电子有限公司	2SC5193	RENESAS/瑞萨	2511	SOT-323	360000	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市安富世纪电子有限公司	2SC5193-T1	NEC	23+	SOT523	50000	全新原装正品现货,支持订货	询价
中天科工半导体（深圳）有限公司	2SC5193-T1-A	NEC	20+	SOT323	49000	原装优势主营型号-可开原型号增税票	询价
贸泽芯城（深圳）电子科技有限公司	2SC5193	RENESAS/瑞萨	23+	SOT-323	612000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
艾睿（深圳）半导体有限公司	2SC5193-T1	NEC	2447	SOT323	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市明嘉莱科技有限公司	2SC5193-T1-A	NEC	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市威尔健半导体有限公司	2SC5193-T1	NEC	23+	SOT-323	50000	全新原装正品现货,支持订货	询价
深圳市一线半导体有限公司	2SC5193-FB		24+		60000		询价
深圳市旺财半导体有限公司	2SC5193		23+	TO	20000	正品原装货价格低	询价

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