2SC5192-T2晶体三极管技术资料参数现货供应价格-IC资料网

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2SC519晶体管资料

2SC519别名：2SC519三极管、2SC519晶体管、2SC519晶体三极管
2SC519生产厂家：日本东芝公司
2SC519制作材料：Si-NPN
2SC519性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SC519封装形式：直插封装
2SC519极限工作电压：110V
2SC519最大电流允许值：7A
2SC519最大工作频率：10MHZ
2SC519引脚数：2
2SC519最大耗散功率：50W
2SC519放大倍数：
2SC519图片代号：E-44
2SC519vtest：110
2SC519htest：10000000
2SC519atest：7
2SC519wtest：50

2SC519代换 2SC519用什么型号代替：BD245C,BD550,BU109,BU110,BU210,BUY20,BUY77,2N4348,2SD1046,3DK206C,

型号	功能描述	生产厂家企业	LOGO
2SC5190	Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification) ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	PANASONIC 松下	PANASONIC
2SC5191	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5191	Low Voltage Operation ,Low Phase Distortion DESCRIPTION • Low Voltage Operation ,Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA APPLICATIONS • Designed for use in low-noise and small s	ISC 无锡固电	ISC
2SC5191	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum	RENESAS 瑞萨	RENESAS
2SC5191-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5191-T1B	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum	RENESAS 瑞萨	RENESAS
2SC5191-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5192	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5192	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192R	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192-T1	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5192-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5192-T2	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5193	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Ma	RENESAS 瑞萨	RENESAS
2SC5193	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5193-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5193-T1	NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Ma	RENESAS 瑞萨	RENESAS
2SC5193-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5194	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package	NEC 瑞萨	NEC
2SC5194	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA •	RENESAS 瑞萨	RENESAS
2SC5194-T1	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA •	RENESAS 瑞萨	RENESAS
2SC5194-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package	NEC 瑞萨	NEC
2SC5194-T2	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package	NEC 瑞萨	NEC
2SC5194-T2	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA •	RENESAS 瑞萨	RENESAS
2SC5195	SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA Supercom	RENESAS 瑞萨	RENESAS
2SC5195	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package	NEC 瑞萨	NEC
2SC5195-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package	NEC 瑞萨	NEC
2SC5196	NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1939	WINGS 永盛电子	WINGS
2SC5196	丝印代码：C5196；TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5196	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5196_V01	TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5197	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5197	Silicon NPN Power Transistors DESCRIPTION ··With TO-3P(I) package ·Complement to type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SC5197	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SC5197	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • Complement to type 2SA1941 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SC5198	isc Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A • Good Linearity of hFE • Complement to Type 2SA1941 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SC5198	丝印代码：C5198；Silicon NPN Triple Diffused Type Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Power Amplifier Applications FEATURES ● High collector voltage˖ VCEO=140V (min) ● Complementary to 2SA1941 ● Recommended for 70-W high-fidelity audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SC5198	TO-3P Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Collector Saturation Voltage ● Good Linearity of hFE APPLICATIONS ● Power Amplifier Applications ● Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Applications	JIANGSU 长电科技	JIANGSU
2SC5198	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5198	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198	Silicon NPN transistor in a TO-3P Plastic Package. Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SA1941. Applications Power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SC5198_V01	Silicon NPN Triple Diffused Type Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198B	Silicon NPN triple diffusion planar transistor FEATURES • High breakdown voltage, VCEO =140V (min) • Complementary to 2SA1941B • TO-3P package which can be installed to the heat sink with one screw APPLICATIONS • Suitable for use in 70W high fidelity audio amplifier’s output stage	NELLSEMI 尼尔半导体	NELLSEMI
2SC5198OQ	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198-OQ	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5198-O-W-N-B	Power Amplifier Applications FEATURES ● High collector voltage˖ VCEO=140V (min) ● Complementary to 2SA1941 ● Recommended for 70-W high-fidelity audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SC5198-R	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	TOSHIBA 东芝	TOSHIBA
2SC5199	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5199	Silicon NPN Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SA1942 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage	ISC 无锡固电	ISC
2SC5199	Silicon NPN Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SA1942 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SC5199	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.	TOSHIBA 东芝	TOSHIBA
2SC5191	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR	RENESAS 瑞萨	RENESAS
2SC5192	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD	RENESAS 瑞萨	RENESAS
2SC5192R	Low-voltage drive, high-frequency transistor	NEC 瑞萨	NEC
2SC5196	Silicon NPN Power Transistors 文件：163.9 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC

2SC519产品属性

类型
描述
VCBO/(V)：
80
VCEO/(V)：
80
IC/(A)：
6
PC/(W)：
60
hFE(min）：
55
hFE（max）：
160
VCE（sat）(V)：
2.0
VCE@IC/(A)：
5
VCE@IB/(A)：
0.5
Package：
TO-3PS

2SC519供应商更多...

更新时间：2026-5-14 14:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SC5194-T1	NEC	21+	SOT323	6000	只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查	询价
中天科工半导体（深圳）有限公司	2SC5193-T1-A	NEC	20+	SOT323	49000	原装优势主营型号-可开原型号增税票	询价
深圳市创新迹电子有限公司	2SC5193	RENESAS/瑞萨	22+	SOT-323	20000	只做原装	询价
深圳市威雅利发展有限公司	2SC5193-T1	NEC	96+	SOT523	1968	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
洪芯国际半导体（深圳）有限公司	2SC5194/T88	NEC	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳深宇韬电子科技有限公司	2SC5193-T1	NEC	2023+	SOT523	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市河锋鑫科技有限公司	2SC5193-T1	RENESAS/瑞萨	2022+	SOT-323	3000	原厂代理终端免费提供样品	询价
深圳市欧立现代科技有限公司	2SC5193-T1	NEC	24+	SOT323	6980	原装现货,可开13%税票	询价
深圳市博中泰实业有限公司	2SC5193-T1-A	NEC	25+	SOT-323	90000	全新原装现货	询价
深圳市安富世纪电子有限公司	2SC5193-T1	NEC	23+	SOT523	50000	全新原装正品现货,支持订货	询价

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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-22

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DdatasheetPDF页码索引