Silicon NPN triple diffusion planar transistor

FEATURES • High breakdown voltage, VCEO =140V (min) • Complementary to 2SA1941B • TO-3P package which can be installed to the heat sink with one screw APPLICATIONS • Suitable for use in 70W high fidelity audio amplifier’s output stage

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SA1941 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A • Good Linearity of hFE • Complement to Type 2SA1941 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage applications

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

Silicon NPN Triple Diffused Type Power Amplifier Applications

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