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2SC517晶体管资料
2SC517别名:2SC517三极管、2SC517晶体管、2SC517晶体三极管
2SC517生产厂家:日本东芝公司
2SC517制作材料:Si-NPN
2SC517性质:射频/高频放大 (HF)_开关管 (S)_功率放大 (L)
2SC517封装形式:直插封装
2SC517极限工作电压:60V
2SC517最大电流允许值:2A
2SC517最大工作频率:50MHZ
2SC517引脚数:3
2SC517最大耗散功率:4W
2SC517放大倍数:
2SC517图片代号:E-36
2SC517vtest:60
2SC517htest:50000000
- 2SC517atest:2
2SC517wtest:4.0001
2SC517代换 2SC517用什么型号代替:BD137,BD167,BD177,BD235,BD439,3DA22B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NPNEPITAXIALTYPE(POWER,DRIVERSTAGEAMPLIFIERAPPLICATIONS) PowerAmplifierApplications DriverStageAmplifierApplications •Hightransitionfrequency:fT=200MHz(typ.) •Complementaryto2SA1930 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS) SwitchingRegulatorandHigh-VoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.5μs(max), tf=0.3μs(max)atIC=2A •Highcollectorbreakdownvoltage:VCEO=400V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HIGHVOLTAGESWITCHINGANDAMPLIFIERAPPLICATIONS HIGHVOLTAGESWITCHINGANDAMPLIFIERAPPLICATIONS COLORTVHORIZONTALDRIVERAPPLICATIONS COLORTVCHROMAOUTPURAPPLICATIONS ●HighVoltage:V(BR)CEO=300V ●SmallCollectorOutputCapacitance:Cob=3.0pF(Typ.) ●Collectormetal(Fin)isfullycoveredwithmoldresin. Collector-Base | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATRANSISTORSILICONNPNEPITAXIALTYPE POWERAMPLIFIERAPPLICATIONS DRIVERSTAGEAMPLIFIERAPPLICATIONS •HighTransitionFrequency:fT=100MHz(Typ.) •Complementaryto2SA1932 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •SiliconNPNepitaxialtype •LowCollectorSaturationVoltage •Hightransitionfrequency •Complementaryto2SA1932 •GoodLinearityofhFE •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications • | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEPITAXIALTYPE(HIHGCURRENTSWITCHINGAPPLICATIONS) High-CurrentSwitchingApplications •Lowcollector-emittersaturationvoltage:VCE(sat)=0.4V(max) (IC=2.5A,IB=125mA) •High-speedswitching:tstg=0.8µs(typ.) Collector-basevoltageVCBO60V Collector-emittervoltageVCEO50V Emitter-basevoltageVEBO5V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNEPITAXIALTYPE(HIGHCURRENTSWITCHING,DC-DCCONVERTERAPPLICATIONS) HIGHCURRENTSWITCHINGAPPLICATIONS DC-DCCONVERTERAPPLICATION | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNEPITAXIALSILICONTRANSISTORINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •LowCurrentConsumptionandHighGain |S21e|2=9.0dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •Mini-Moldpackage EIAJ:SC-59 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •LowCurrentConsumptionandHighGain |S21e|2=9.0dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •Mini-Moldpackage EIAJ:SC-59 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=11.5dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=10.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •4-pinMini-Moldpackage EIAJ:SC-61 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=11.5dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=10.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •4-pinMini-Moldpackage EIAJ:SC-61 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=11.5dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=10.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •4-pinMini-Moldpackage EIAJ:SC-61 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •SmallMini-Moldpackage EIAJ:SC-70 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •SmallMini-Moldpackage EIAJ:SC-70 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •SmallMini-Moldpackage EIAJ:SC-70 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Complementaryto2SA1930 文件:176.74 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNtransistorinaTO-220FPlasticPackage. 文件:1.038359 Mbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-220FPlastic-EncapsulateTransistors 文件:1.11413 Mbytes Page:2 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SiliconNPNEpitaxialTypePowerAmplifierApplications 文件:123.15 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 180V 2A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 180V 2A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
SiliconNPNEpitaxialTypePowerAmplifierApplications 文件:123.15 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNtransistorinaTO-251PlasticPackage. 文件:984.5 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNtransistorinaTO-126PlasticPackage. 文件:1.029839 Mbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHigh-VoltageSwitchingApplications 文件:143.25 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HighCollectorBreakdownVoltage:VCEO=400V 文件:184.83 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHigh-VoltageSwitchingApplications 文件:143.25 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-VoltageSwitchingandAmplifierApplications 文件:143.92 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-VoltageSwitchingandAmplifierApplications 文件:143.92 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PowerAmplifierApplications 文件:120.44 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PowerAmplifierApplications 文件:120.44 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-CurrentSwitchingApplications 文件:129.61 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-CurrentSwitchingApplications 文件:129.61 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-CurrentSwitchingApplications 文件:151.08 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-CurrentSwitchingApplications 文件:151.08 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |
2SC517产品属性
- 类型
描述
- 型号
2SC517
- 功能描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
NEC |
24+ |
NA/ |
24250 |
原装现货,当天可交货,原型号开票 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS |
21+ |
SOT323 |
2590 |
原装现货假一赔十 |
|||
RENESAS |
24+ |
SOT323 |
16900 |
原装正品现货支持实单 |
|||
NEC |
23+ |
SOT-323 |
33000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOSHIBA |
24+ |
60000 |
|||||
RENESAS |
17+ |
SOT323 |
2590 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
专业铁帽 |
CAN3 |
5600 |
原装铁帽专营,代理渠道量大可订货 |
|||
NEC |
22+ |
SOT323 |
25000 |
只有原装原装,支持BOM配单 |
2SC517规格书下载地址
2SC517参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SC5193
- 2SC5192
- 2SC5191
- 2SC5190
- 2SC5188
- 2SC5187
- 2SC5186
- 2SC5185
- 2SC5184
- 2SC5183(R)
- 2SC5183
- 2SC5182
- 2SC5181
- 2SC5180
- 2SC518
- 2SC5179
- 2SC5178(R)
- 2SC5178
- 2SC5177
- 2SC5176
- 2SC5175
- 2SC5174
- 2SC5173
- 2SC5172
- 2SC5171
- 2SC5170
- 2SC516A
- 2SC5169
- 2SC5168
- 2SC5167
- 2SC5166
- 2SC5165
- 2SC5164
- 2SC5163
- 2SC5162P
- 2SC5162N
- 2SC5162(F5)
- 2SC5161B
- 2SC5161A
- 2SC5161(F5)
- 2SC5161
- 2SC5160
- 2SC516
- 2SC515A
- 2SC5159
- 2SC5158
- 2SC5155
- 2SC5154
- 2SC5150
- 2SC515
- 2SC5149
- 2SC5148
- 2SC5147
- 2SC5145
- 2SC5144
- 2SC5143
- 2SC5142
- 2SC5141
- 2SC5140
- 2SC5139
- 2SC5138
- 2SC5137
- 2SC5136
2SC517数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-302SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5015-T1
https://hch01.114ic.com/
2020-11-132SC5299
2SC5299,全新原装当天发货或门市自取0755-82732291.
2020-4-242SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-22
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