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晶体管

2SC517晶体管资料

2SC517别名：2SC517三极管、2SC517晶体管、2SC517晶体三极管
2SC517生产厂家：日本东芝公司
2SC517制作材料：Si-NPN
2SC517性质：射频/高频放大（HF）_开关管（S）_功率放大（L）
2SC517封装形式：直插封装
2SC517极限工作电压：60V
2SC517最大电流允许值：2A
2SC517最大工作频率：50MHZ
2SC517引脚数：3
2SC517最大耗散功率：4W
2SC517放大倍数：
2SC517图片代号：E-36
2SC517vtest：60
2SC517htest：50000000
2SC517atest：2
2SC517wtest：4.0001

2SC517代换 2SC517用什么型号代替：BD137,BD167,BD177,BD235,BD439,3DA22B,

型号	功能描述	生产厂家&企业	LOGO
2SC5171	NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT= 200 MHz (typ.) • Complementary to 2SA1930	TOSHIBA 东芝	TOSHIBA
2SC5171	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5172	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5172	NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) at IC = 2 A • High collector breakdown voltage: VCEO = 400 V	TOSHIBA 东芝	TOSHIBA
2SC5173	HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS COLOR TV HORIZONTAL DRIVER APPLICATIONS COLOR TV CHROMA OUTPUR APPLICATIONS ● High Voltage : V(BR)CEO = 300V ● Small Collector Output Capacitance : Cob =3.0pF(Typ.) ● Collector metal (Fin) is fully covered with mold resin. Collector-Base	TOSHIBA 东芝	TOSHIBA
2SC5174	TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • High Transition Frequency: fT = 100 MHz (Typ.) • Complementary to 2SA1932	TOSHIBA 东芝	TOSHIBA
2SC5174	isc Silicon NPN Power Transistor DESCRIPTION • Silicon NPN epitaxial type • Low Collector Saturation Voltage • High transition frequency • Complementary to 2SA1932 • Good Linearity of hFE • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications •	ISC 无锡固电	ISC
2SC5174	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC5175	NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS) High-Current Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = 0.4 V (max) (IC = 2.5 A, IB = 125 mA) • High-speed switching: tstg = 0.8 µs (typ.) Collector-base voltage VCBO 60V Collector-emitter voltage VCEO 50V Emitter-base voltage VEBO 5V	TOSHIBA 东芝	TOSHIBA
2SC5176	NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS) HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATION	TOSHIBA 东芝	TOSHIBA
2SC5177	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain \|S21e\|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59	NEC 瑞萨	NEC
2SC5177	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain \|S21e\|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59	RENESAS 瑞萨	RENESAS
2SC5178	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5178	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5178R	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5178R-T1	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5178R-T2	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5178-T1	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5178-T1	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5178-T2	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61	NEC 瑞萨	NEC
2SC5178-T2	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5179	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5179	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5179-T1	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5179-T1	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5179-T2	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC5179-T2	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain \|S21e\|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70	NEC 瑞萨	NEC
2SC5171	Complementary to 2SA1930 文件：176.74 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SC5171	Silicon NPN transistor in a TO-220F Plastic Package. 文件：1.038359 Mbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SC5171	TO-220F Plastic-Encapsulate Transistors 文件：1.11413 Mbytes Page：2 Pages	JIANGSU 长电科技	JIANGSU
2SC5171	Silicon NPN Epitaxial Type Power Amplifier Applications 文件：123.15 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5171(ONK,Q,M)	封装/外壳：TO-220-3 整包包装：散装描述：TRANS NPN 180V 2A TO220NIS 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SC5171,MATUDQ(J	封装/外壳：TO-220-3 整包包装：散装描述：TRANS NPN 180V 2A TO220NIS 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SC5171_07	Silicon NPN Epitaxial Type Power Amplifier Applications 文件：123.15 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5171I	Silicon NPN transistor in a TO-251 Plastic Package. 文件：984.5 Kbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SC5171S	Silicon NPN transistor in a TO-126 Plastic Package. 文件：1.029839 Mbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SC5172	High Collector Breakdown Voltage: VCEO =400V 文件：184.83 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SC5172	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications 文件：143.25 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC5172_06	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications 文件：143.25 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC5173	High-Voltage Switching and Amplifier Applications 文件：143.92 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5173_04	High-Voltage Switching and Amplifier Applications 文件：143.92 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5174	Power Amplifier Applications 文件：120.44 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SC5174_04	Power Amplifier Applications 文件：120.44 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SC5175	High-Current Switching Applications 文件：129.61 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5175_04	High-Current Switching Applications 文件：129.61 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC5176	High-Current Switching Applications 文件：151.08 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC5176_04	High-Current Switching Applications 文件：151.08 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA

2SC517产品属性

类型
描述
型号
2SC517
功能描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37

2SC517供应商更多...

更新时间：2025-8-6 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SC5179	NEC	24+	NA/	24250	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	2SC518	TOSHIBA/东芝	专业铁帽	CAN3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市威雅利发展有限公司	2SC5179-T1	RENESAS	17+	SOT323	2590	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市航润创能电子集团有限公司	2SC5179-T1	RENESAS	21+	SOT323	2590	原装现货假一赔十	询价
深圳市振宏微科技有限公司	2SC5179	SOT-323	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	2SC5179-T1-A	NEC	23+	SOT-323	33000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市宇创芯科技有限公司	2SC5179-T1	RENESAS	24+	SOT323	16900	原装正品现货支持实单	询价
深圳市一线半导体有限公司	2SC5179-FB	TOSHIBA	24+		60000		询价
深圳市创新迹电子有限公司	2SC5179-T1-A	NEC	22+	SOT323	25000	只有原装原装,支持BOM配单	询价
深圳市盈慧通电子有限公司	2SC5179	RENESAS/瑞萨	2511	SOT-323	360000	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价

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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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2SC517晶体管资料

2SC517产品属性

2SC517供应商更多...

2SC517芯片相关品牌

2SC517规格书下载地址

2SC517参数引脚图相关

2SC517数据表相关新闻

2SC4617G-SOT323R-R-TG_UTC代理商

2SC5353BL-TO126CK-TG

2SC5569G-SOT89R-TG

2SC5015-T1

2SC5299

2SC4617TLR

DdatasheetPDF页码索引