2SC517晶体管资料

  • 2SC517别名:2SC517三极管、2SC517晶体管、2SC517晶体三极管

  • 2SC517生产厂家:日本东芝公司

  • 2SC517制作材料:Si-NPN

  • 2SC517性质:射频/高频放大 (HF)_开关管 (S)_功率放大 (L)

  • 2SC517封装形式:直插封装

  • 2SC517极限工作电压:60V

  • 2SC517最大电流允许值:2A

  • 2SC517最大工作频率:50MHZ

  • 2SC517引脚数:3

  • 2SC517最大耗散功率:4W

  • 2SC517放大倍数

  • 2SC517图片代号:E-36

  • 2SC517vtest:60

  • 2SC517htest:50000000

  • 2SC517atest:2

  • 2SC517wtest:4.0001

  • 2SC517代换 2SC517用什么型号代替:BD137,BD167,BD177,BD235,BD439,3DA22B,

型号 功能描述 生产厂家&企业 LOGO 操作

NPNEPITAXIALTYPE(POWER,DRIVERSTAGEAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications DriverStageAmplifierApplications •Hightransitionfrequency:fT=200MHz(typ.) •Complementaryto2SA1930

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS)

SwitchingRegulatorandHigh-VoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=0.5μs(max), tf=0.3μs(max)atIC=2A •Highcollectorbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HIGHVOLTAGESWITCHINGANDAMPLIFIERAPPLICATIONS

HIGHVOLTAGESWITCHINGANDAMPLIFIERAPPLICATIONS COLORTVHORIZONTALDRIVERAPPLICATIONS COLORTVCHROMAOUTPURAPPLICATIONS ●HighVoltage:V(BR)CEO=300V ●SmallCollectorOutputCapacitance:Cob=3.0pF(Typ.) ●Collectormetal(Fin)isfullycoveredwithmoldresin. Collector-Base

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATRANSISTORSILICONNPNEPITAXIALTYPE

POWERAMPLIFIERAPPLICATIONS DRIVERSTAGEAMPLIFIERAPPLICATIONS •HighTransitionFrequency:fT=100MHz(Typ.) •Complementaryto2SA1932

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION •SiliconNPNepitaxialtype •LowCollectorSaturationVoltage •Hightransitionfrequency •Complementaryto2SA1932 •GoodLinearityofhFE •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALTYPE(HIHGCURRENTSWITCHINGAPPLICATIONS)

High-CurrentSwitchingApplications •Lowcollector-emittersaturationvoltage:VCE(sat)=0.4V(max) (IC=2.5A,IB=125mA) •High-speedswitching:tstg=0.8µs(typ.) Collector-basevoltageVCBO60V Collector-emittervoltageVCEO50V Emitter-basevoltageVEBO5V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(HIGHCURRENTSWITCHING,DC-DCCONVERTERAPPLICATIONS)

HIGHCURRENTSWITCHINGAPPLICATIONS DC-DCCONVERTERAPPLICATION

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALSILICONTRANSISTORINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •LowCurrentConsumptionandHighGain |S21e|2=9.0dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •Mini-Moldpackage EIAJ:SC-59

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION FEATURES •LowCurrentConsumptionandHighGain |S21e|2=9.0dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •Mini-Moldpackage EIAJ:SC-59

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=11.5dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=10.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •4-pinMini-Moldpackage EIAJ:SC-61

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=11.5dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=10.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •4-pinMini-Moldpackage EIAJ:SC-61

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=11.5dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=10.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •4-pinMini-Moldpackage EIAJ:SC-61

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORIN4-PINMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •SmallMini-Moldpackage EIAJ:SC-70

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •SmallMini-Moldpackage EIAJ:SC-70

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGEFORLOW-NOISEMICROWAVEAMPLIFICATION

FEATURES •Lowcurrentconsumptionandhighgain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz •SmallMini-Moldpackage EIAJ:SC-70

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTORINSMALLMINI-MOLDPACKAGE FORLOW-NOISEMICROWAVEAMPLIFICATION

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Complementaryto2SA1930

文件:176.74 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtransistorinaTO-220FPlasticPackage.

文件:1.038359 Mbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TO-220FPlastic-EncapsulateTransistors

文件:1.11413 Mbytes Page:2 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SiliconNPNEpitaxialTypePowerAmplifierApplications

文件:123.15 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 180V 2A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 180V 2A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SiliconNPNEpitaxialTypePowerAmplifierApplications

文件:123.15 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNtransistorinaTO-251PlasticPackage.

文件:984.5 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNtransistorinaTO-126PlasticPackage.

文件:1.029839 Mbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHigh-VoltageSwitchingApplications

文件:143.25 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighCollectorBreakdownVoltage:VCEO=400V

文件:184.83 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHigh-VoltageSwitchingApplications

文件:143.25 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingandAmplifierApplications

文件:143.92 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingandAmplifierApplications

文件:143.92 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

PowerAmplifierApplications

文件:120.44 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

PowerAmplifierApplications

文件:120.44 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-CurrentSwitchingApplications

文件:129.61 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-CurrentSwitchingApplications

文件:129.61 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-CurrentSwitchingApplications

文件:151.08 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-CurrentSwitchingApplications

文件:151.08 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC517产品属性

  • 类型

    描述

  • 型号

    2SC517

  • 功能描述

    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37

更新时间:2025-7-22 20:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
NEC
24+
NA/
24250
原装现货,当天可交货,原型号开票
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
RENESAS
21+
SOT323
2590
原装现货假一赔十
RENESAS
24+
SOT323
16900
原装正品现货支持实单
NEC
23+
SOT-323
33000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA
24+
60000
RENESAS
17+
SOT323
2590
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA/东芝
专业铁帽
CAN3
5600
原装铁帽专营,代理渠道量大可订货
NEC
22+
SOT323
25000
只有原装原装,支持BOM配单

2SC517芯片相关品牌

  • API
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  • BOARDCOM
  • crydom
  • IDT
  • LORLIN
  • LUGUANG
  • MOLEX4
  • NEC
  • SILABS
  • SOURIAU
  • SUPERWORLD

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