Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High gain, low noise figure PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz APPLICATIONS • Designed for VHF, UHF wide band amplifier.

Silicon NPN RF Transistor

DESCRIPTION • High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V， IC=20mA， f=0.9GHz • High gain, low noise figure ︱ S21e︱ 2 = 13.5 dB @ VCE=5V， IC=20mA， f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V， IC=5mA， f=0.9GHz • Minimum Lot-to-Lot variations for robust device performance and rel

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Muting Circuits, Drivers

Muting Circuits, Drivers Features · High DC current gain. · On-chip bias resistance (R1=47kΩ, R2=47kΩ). · Very small-sized package permitting 2SC4909-applied sets to be made smaller and slimmer. · Small ON resistance.

VHF-Band Power Amp Applications?

VHF-Band Power Amplifier Applications Features · On-chip emitter ballast resistors.

Silicon NPN Triple Diffused

Features • High breakdown voltage • V(BR)CEO = 2000 V min Application High voltage amplifier

Silicon NPN Triple Diffused

Features • High breakdown voltage • V(BR)CEO = 2000 V min Application High voltage amplifier

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY, FM,RF,MIX, IF AMPLIFIER APPLICATIONS)

2SC4916

2SC4916

Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO=1500V(Min) • High Switching Speed • Low Saturation Voltage • Built-in Damper Diod APPLICATIONS • Horizontal output applications for medium resolution displays & color TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for high resolution display,colorTV • High speed switching applications

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Muting Circuit Applications

Muting Circuit Applications Features · Very small-sized package permitting 2SC4919- applied sets to be made smaller and slimmer. · Small output capacitance. · Low collector-to-emitter saturation voltage. · Small ON resistance.

Muting Circuit Applications

Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features • High DC current gain. • On-chip bias resistance (R1=4.7kΩ, R2=4.7kΩ). • Very small-sized package permitting 2SC4920-applied sets to be made smaller and slimmer. • Small ON resistance.

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features · High DC current gain. · On-chip bias resistance (R1=10kΩ, R2=10kΩ). · Very small-sized package permitting 2SC4921-applied sets to be made smaller and slimmer. · Small ON resistance.

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features • High DC current gain. • On-chip bias resistance (R1=47kΩ, R2=47kΩ). • Very small-sized package permitting 2SC4922-applied sets to be made smaller and slimmer. • Small ON resistance.

Very High-Definition CRT Display Horizontal Deflection Output Applications????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf typ=100ns). • High reliability (Adoption of HVP process). • High breakdown voltage (VCBO=1500V). • Adoption of MBIT process.

Very High-Definition CRT Display Horizontal Deflection Output Applications????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf typ=100ns). • High reliability (Adoption of HVP process). • High breakdown voltage (VCBO=1500V). • Adoption of MBIT process.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Very high-definition CRT display ·Horizontal deflection output applications

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Triple Diffused

Features • High breakdown voltage VCES = 1500 V • Built-in damper diode type • Isolated package TO-3PFM Application TV/character display horizontal deflection output

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • Built-in damper diode • High breakdown voltage APPLICATIONS • TV/Character display horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • Built-in damper diode • High breakdown voltage APPLICATIONS • TV/Character display horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High speed switching • High breakdown voltage,high current APPLICATIONS • Character display horizontal deflection output applications

Character Display Horizontal Deflection Output

Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 15 A • Suitable for large size CRT Display Application Character Display Horizontal Deflection Output

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High speed switching • High breakdown voltage,high current APPLICATIONS • Character display horizontal deflection output applications

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) • High Switching Speed APPLICATIONS • Designed for character display horizontal deflection output applications.

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Very small-sized package permitting 2SC4931-applied sets to be made small and slim.

Silicon NPN Epitaxial

Silicon NPN Epitaxial Application High voltage amplifier

Silicon NPN Epitaxial

Silicon NPN Epitaxial Application High voltage amplifier

Silicon NPN Epitaxial

Silicon NPN Epitaxial Application High voltage amplifier

NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Good hFE linearity

Switching Power Transistor(4A NPN)

Switching Power Transistor 4A NPN

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 550V(Min) • Fast Switching Speed • Low SaturationVoltage APPLICATIONS • Horizontal deflection circuits of color TV receivers

Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) • Fast Switching speed APPLICATIONS • Color TV horizontal deflection output applications • Color display horizontal deflection output applications

Silicon Power Transistors

DESCRIPTION • With TO-3PML package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • Switching power transistor • High breakdown voltage

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • Switching power transistor • High breakdown voltage

Switching Power Transistor(6A NPN)

Switching Power Transistor 6A NPN

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high-voltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES • New package with dimensio

NPN Silicon Transistors

■ Features ● High voltage ● Fast switching speed ● Complementary transistor with the 2SA1871

SILICON TRANSISTORS

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed highvoltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES • New package with di

Audio Frequency General Purpose Amplefier Applications

Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1873