Silicon NPN RF Transistor

DESCRIPTION • High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V， IC=20mA， f=0.9GHz • High gain, low noise figure ︱ S21e︱ 2 = 13.5 dB @ VCE=5V， IC=20mA， f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V， IC=5mA， f=0.9GHz • Minimum Lot-to-Lot variations for robust device performance and rel

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High gain, low noise figure PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz APPLICATIONS • Designed for VHF, UHF wide band amplifier.

NPN Transistor

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NPN SILICON RF TRANSISTOR

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Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application UHF / VHF wide band amplifier

包装：卷带（TR） 描述：TRANSISTOR NPN CMPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：卷带（TR） 描述：TRANSISTOR NPN CMPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个