2SC453晶体管资料

  • 2SC453别名:2SC453三极管、2SC453晶体管、2SC453晶体三极管

  • 2SC453生产厂家:日本三菱公司

  • 2SC453制作材料:Si-NPN

  • 2SC453性质:射频/高频放大 (HF)_功率放大 (L)

  • 2SC453封装形式:特殊封装

  • 2SC453极限工作电压:90V

  • 2SC453最大电流允许值:1.2A

  • 2SC453最大工作频率:170MHZ

  • 2SC453引脚数:3

  • 2SC453最大耗散功率:25W

  • 2SC453放大倍数

  • 2SC453图片代号:F-28

  • 2SC453vtest:90

  • 2SC453htest:170000000

  • 2SC453atest:1.2

  • 2SC453wtest:25

  • 2SC453代换 2SC453用什么型号代替:3DK105D,

型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(H)ISpackage •Highvoltage,highspeed •Lowsaturationvoltage •Bult-indamperdiode APPLICATIONS •Horizontaldeflectionoutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(H)ISpackage •Highvoltage,highspeed •Lowsaturationvoltage •Bult-indamperdiode APPLICATIONS •Horizontaldeflectionoutputapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(H)ISpackage •Highvoltage,highspeed •Lowsaturationvoltage •Bult-indamperdiode APPLICATIONS •Horizontaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SC4532

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching)

SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbe

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Highspeedswitching •HighVCBO •Wideareaofsafeoperation APPLICATIONS •Forhighbreakdownvoltage,high-speedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Highspeedswitching •HighVCBO •Wideareaofsafeoperation APPLICATIONS •Forhighbreakdownvoltate,high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Highspeedswitching •HighVCBO •Wideareaofsafeoperation APPLICATIONS •Forhighbreakdownvoltate,high-speedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

NPNEPITAXIALSILICONRFTRANSISTORFOR

DESCRIPTION The2SC4536isdesignedforuseinmiddlepower,lowdistortionlownoisefigureRFamplifier.Itfeaturesexcellentlinearityandlargedynamicrange,whichmakeitsuitableforCATV,telecommunication,andotheruse,itemploysplasticsurfacemounttypepackage(SOT-89). FEATURES

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNMEDIUMPOWERMICROWAVETRANSISTOR

DESCRIPTION TheNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesofferse

CEL

California Eastern Labs

CEL

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoise NF=1.5dBTYP.@VCE=10V,IC=10mA,f=1GHz •LowDistortion IM2=57.5dBTYP.@VCE=10V,IC=50mA IM3=82dBTYP.@VCE=10V,IC=50mA APPLICATIONS •Designedforuseinmiddlepower,lowdistortionlownoisefigureRFamplifier.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SC4536isdesignedforuseinmiddlepower,lowdistortionlownoisefigureRFamplifier.Itfeaturesexcellentlinearityandlargedynamicrange,whichmakeitsuitableforCATV,telecommunication,andotheruse,itemploysplasticsurfacemounttypepackage(SOT-89). FEATURES

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONRFTRANSISTORFOR

DESCRIPTION The2SC4536isdesignedforuseinmiddlepower,lowdistortionlownoisefigureRFamplifier.Itfeaturesexcellentlinearityandlargedynamicrange,whichmakeitsuitableforCATV,telecommunication,andotheruse,itemploysplasticsurfacemounttypepackage(SOT-89). FEATURES

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoise NF=1.6dBTYP.,@VCE=5V,IC=5mA,f=900MHz •HighPowerGain PG=10dBTYP.@VCE=5V,IC=20mA,f=900MHz APPLICATIONS •DesignedforVHF,UHFlownoiseamplifier.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNEpitaxial

Application UHF/VHFwidebandamplifier

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxial

Application UHF/VHFwidebandamplifier

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial

Application UHF/VHFwidebandamplifier

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

RatignsandCaracteristicsofFujiPowerTransistor

RatignsandCaracteristicsofFujiPowerTransistor

FujiFuji Electric

富士电机富士电机株式会社

Fuji

iscSiliconNPNPowerTransistor

iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min.) ·HighSwitchingSpeed ·HighReliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepowerampl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min.) •HighSwitchingSpeed •HighReliability APPLICATIONS •Switchingregulators •Ultrasonicgenerators •Highfrequencyinverters •Generalpurposepoweramplifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNEPITAXIALPLANARTYPE(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=700mA) •Highspeedswitchingtime:tstg=0.3µs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonceramicsubstrate) •Complementaryto2SA1743

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:290.76 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:153.36 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:153.36 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:136.13 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

文件:127.84 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:185.26 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:185.26 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD

文件:181.8 Kbytes Page:9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

RF&Microwavedevice

文件:137.58 Kbytes Page:2 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-243AA 包装:托盘 描述:RF TRANS NPN 15V SOT89 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

封装/外壳:TO-243AA 包装:托盘 描述:RF TRANS NPN 15V 5.5GHZ SOT89 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

SiliconNPNPowerTransistors

文件:233.12 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:249.88 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:249.88 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

2SC453产品属性

  • 类型

    描述

  • 型号

    2SC453

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-8-2 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2511
SOT-89
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
RENESAS/瑞萨
22+
SOT89
8000
原装正品支持实单
NEC
2024
SOT89
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
NEC
24+
SOT-89
7900
新进库存/原装
NEC
24+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
NEC
22+
SOT89
157506
原装正品现货,可开13个点税
RENESAS/瑞萨
2450+
SOT89
6885
只做原装正品假一赔十为客户做到零风险!!
NEC
2019+
SOT89
36000
原盒原包装 可BOM配套
RENESAS
24+
N/A
8000
全新原装正品,现货销售
RENESAS
23+
SOT89
50000
只做原装正品

2SC453芯片相关品牌

  • ADAM-TECH
  • ECS
  • EDAC
  • grayhill
  • Intel
  • KODENSHI
  • MEDER
  • MPD
  • RENCO
  • SEI
  • TAI-SAW
  • ZFSWITCHES

2SC453数据表相关新闻