Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications

2SC4532

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltage, high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltate ,high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltate, high-speed switching applications

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers e

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz • Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA APPLICATIONS • Designed for use in middle power , low distortion low noise figure RF amplifier.

丝印代码：QR；MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLDDESCRIPTION\nThe 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, tel • Low distortion: IM2= 59.0 dBc TYP., IM3= 82.0 dBc TYP. @ VCE= 10 V, IC= 50 mA\n• Low noise: NF = 2.0 dB TYP. @ VCE= 10 V, IC= 50 mA, f = 1 GHz\n• Small package : 3-pin power minimold package;

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz • High Power Gain PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS • Designed for VHF, UHF low noise amplifier.

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Ratigns and Caracteristics of Fuji Power Transistor

Ratigns and Caracteristics of Fuji Power Transistor

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

isc Silicon NPN Power Transistor

iscSilicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power ampl

NPN EPITAXIAL PLANAR TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1743

Silicon NPN Power Transistors

文件：290.76 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：153.36 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：153.36 Kbytes Page：4 Pages

2SC4532

Silicon NPN Power Transistors

文件：136.13 Kbytes Page：4 Pages

Silicon NPN Power Transistor

文件：127.84 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：185.26 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：185.26 Kbytes Page：4 Pages

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

文件：181.8 Kbytes Page：9 Pages

RF & Microwave device

文件：137.58 Kbytes Page：2 Pages

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V 5.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

Transistor-Small Signal Bip-TRSs for High Frequency Amplifier

Silicon NPN Power Transistors

文件：233.12 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：249.88 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：249.88 Kbytes Page：4 Pages