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2SC453晶体管资料
2SC453别名：2SC453三极管、2SC453晶体管、2SC453晶体三极管
2SC453生产厂家：日本三菱公司
2SC453制作材料：Si-NPN
2SC453性质：射频/高频放大 （HF）_功率放大 （L）
2SC453封装形式：特殊封装
2SC453极限工作电压：90V
2SC453最大电流允许值：1.2A
2SC453最大工作频率：170MHZ
2SC453引脚数：3
2SC453最大耗散功率：25W
2SC453放大倍数：
2SC453图片代号：F-28
2SC453vtest：90
2SC453htest：170000000
- 2SC453atest：1.2
2SC453wtest：25
2SC453代换 2SC453用什么型号代替：3DK105D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications | SAVANTIC |   | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications | ISC 无锡固电 | | ||
2SC4532 Coming Soon. If you have some information on related parts, please share useful information by adding links below. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltage, high-speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltate ,high-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltate, high-speed switching applications | JMNIC 锦美电子 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES | RENESAS 瑞萨 | | ||
NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers e | CEL | | ||
isc Silicon NPN RF Transistor DESCRIPTION • Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz • Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA APPLICATIONS • Designed for use in middle power , low distortion low noise figure RF amplifier. | ISC 无锡固电 | | ||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES | RENESAS 瑞萨 | | ||
isc Silicon NPN RF Transistor DESCRIPTION • Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz • High Power Gain PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS • Designed for VHF, UHF low noise amplifier. | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Application UHF / VHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application UHF / VHF wide band amplifier | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application UHF / VHF wide band amplifier | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 | | ||
Ratigns and Caracteristics of Fuji Power Transistor Ratigns and Caracteristics of Fuji Power Transistor | Fuji 富士通 | | ||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor iscSilicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power ampl | ISC 无锡固电 | | ||
NPN EPITAXIAL PLANAR TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1743 | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors 文件：290.76 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：153.36 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：153.36 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
2SC4532 | ETC 知名厂家 | ETC | | |
Silicon NPN Power Transistors 文件：136.13 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：127.84 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：185.26 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：185.26 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
NPN SILICON RF TRANSISTOR | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD 文件：181.8 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
RF & Microwave device 文件：137.58 Kbytes Page：2 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V 5.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
Transistor-Small Signal Bip-TRSs for High Frequency Amplifier | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors 文件：233.12 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：249.88 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：249.88 Kbytes Page：4 Pages | JMNIC 锦美电子 | |
2SC453产品属性
- 类型
描述
- 型号
2SC453
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
2023+ |
SOT89 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
24+ |
SOT89 |
1000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
12237 |
原装现货,当天可交货,原型号开票 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
16048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NEC |
25+ |
SOT-89 |
20300 |
NEC原装特价2SC4536即刻询购立享优惠#长期有货 |
|||
RENESAS |
SOT-89 |
50000 |
|||||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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2SC453规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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DdatasheetPDF页码索引
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