MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz • Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA APPLICATIONS • Designed for use in middle power , low distortion low noise figure RF amplifier.

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers e

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

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RF & Microwave device

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封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 15V 5.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频