isc Silicon NPN Power Transistor

DESCRIPTION • High hFE • Low collector-to-emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High switching applications

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

NPN Triple Diffused Planar Silicon Transistor

Features ● High breakdown voltage ● Adoption of MBIT process ● Excellent hFE linearity

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. Applications High voltage driver applications.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃