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2SC4003晶体管资料
2SC4003别名：2SC4003三极管、2SC4003晶体管、2SC4003晶体三极管
2SC4003生产厂家：日本三洋公司
2SC4003制作材料：Si-NPN
2SC4003性质：开关管 （S）_TR
2SC4003封装形式：直插封装
2SC4003极限工作电压：400V
2SC4003最大电流允许值：0.2A
2SC4003最大工作频率：70MHZ
2SC4003引脚数：3
2SC4003最大耗散功率：10W
2SC4003放大倍数：
2SC4003图片代号：A-80
2SC4003vtest：400
2SC4003htest：70000000
- 2SC4003atest：0.2
2SC4003wtest：10
2SC4003代换 2SC4003用什么型号代替：2SC3063,2SC3075,2SC3129,2SC3588,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC4003 | High-Voltage Driver Applications? High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. | SANYO 三洋 |   | |
2SC4003 | Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL 东电电子 | | |
2SC4003 | NPN Triple Diffused Planar Silicon Transistor Features ● High breakdown voltage ● Adoption of MBIT process ● Excellent hFE linearity | KEXIN 科信电子 | | |
2SC4003 | isc Silicon NPN Power Transistor DESCRIPTION • High hFE • Low collector-to-emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High switching applications | ISC 无锡固电 | | |
2SC4003 | Silicon NPN transistor in a TO-252 Plastic Package. Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. Applications High voltage driver applications. | FOSHAN 蓝箭电子 | | |
2SC4003 | TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat) | JIANGSU 长电科技 | | |
2SC4003 | TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SC4003 | Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SC4003 | Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SC4003 | 双极型晶体管 | LUGUANG 鲁光电子 | | |
2SC4003 | 400V,0.2A,Medium Power NPN Bipolar Transistor | GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. 银河微电常州银河世纪微电子股份有限公司 | | |
2SC4003 | 晶体管 | JSCJ 长晶科技 | | |
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |
2SC4003产品属性
- 类型
描述
- 型号
2SC4003
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
High-Voltage Driver Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长晶 |
2511 |
TO-252 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ONSEMI/安森美 |
2410+ |
TO-252 |
1 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
长电 |
25+23+ |
TO-251 |
23779 |
绝对原装正品全新进口深圳现货 |
|||
三洋 |
2024 |
251-252 |
499844 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
长电 |
2018 |
TO-252 |
15000 |
||||
SANYO |
1922+ |
SOT-252 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
SANYO |
23+ |
NA |
1086 |
专做原装正品,假一罚百! |
|||
SANYO/三洋 |
23+ |
SOT-252 |
50000 |
全新原装正品现货,支持订货 |
|||
SANYO |
23+ |
TO-251 |
147 |
全新原装正品现货,支持订货 |
2SC4003规格书下载地址
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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DdatasheetPDF页码索引
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