Low Level and General Purpose Amplifiers

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NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SC4001 is designed for use of high-resolution monitor TV applications. This makes it possible to raise the video band of high-resolution monitor TVs to 50 MHz.

isc Silicon NPN Power Transistor

DESCRIPTION • The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. FEATURES • Collector–Emitter Sustaining Voltage- : VCBO = 300 V(Min) • Complement to Type 2SA1546

High-Voltage Driver Applications???

High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.

High-Voltage Driver Applications?

High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Triple Diffused Planar Silicon Transistor

Features ● High breakdown voltage ● Adoption of MBIT process ● Excellent hFE linearity

isc Silicon NPN Power Transistor

DESCRIPTION • High hFE • Low collector-to-emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High switching applications

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. Applications High voltage driver applications.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be

Driver Applications?

Driver Applications Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handl

Driver Applications

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 50±8V between collector and base. • Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. • Large inductive load handling cap

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1634 APPLICATIONS • Designed for audio and general purpose applications

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1635 APPLICATIONS • Designed for audio and general purpose applications

Power Transistor (-80V, -4A)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Transistor-Bipolar Power Transistors

小信号晶体管

NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 800V 1A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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High DC current gain.

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