2SC400晶体管资料

  • 2SC400别名:2SC400三极管、2SC400晶体管、2SC400晶体三极管

  • 2SC400生产厂家:日本东芝公司

  • 2SC400制作材料:Si-NPN

  • 2SC400性质:通用型 (Uni)

  • 2SC400封装形式:直插封装

  • 2SC400极限工作电压:30V

  • 2SC400最大电流允许值:0.1A

  • 2SC400最大工作频率:300MHZ

  • 2SC400引脚数:3

  • 2SC400最大耗散功率

  • 2SC400放大倍数

  • 2SC400图片代号:D-8

  • 2SC400vtest:30

  • 2SC400htest:300000000

  • 2SC400atest:0.1

  • 2SC400wtest:0

  • 2SC400代换 2SC400用什么型号代替:BC108,BC172,BC183,BC208,BC238,BC383,BC548,BF583,2N2220,2N2221,2N2222,3DG120C,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC400

LowLevelandGeneralPurposeAmplifiers

文件:84.74 Kbytes Page:1 Pages

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

iscSiliconNPNPowerTransistor

DESCRIPTION •The2SC4001isdesignedforusesofhigh-resolutionmonitor TVapplications.Thismakesitpossibletoraisethevideoband Ofhigh-resolutionmonitorTVsto50MHz. FEATURES •Collector–EmitterSustainingVoltage- :VCBO=300V(Min) •ComplementtoType2SA1546

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SC4001isdesignedforuseofhigh-resolutionmonitorTVapplications.Thismakesitpossibletoraisethevideobandofhigh-resolutionmonitorTVsto50MHz.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

High-VoltageDriverApplications???

High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-VoltageDriverApplications?

High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

NPNTripleDiffusedPlanarSiliconTransistor

Features ●Highbreakdownvoltage ●AdoptionofMBITprocess ●ExcellenthFElinearity

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

SiliconNPNtransistorinaTO-252PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity. Applications Highvoltagedriverapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighhFE •Lowcollector-to-emittersaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Highswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •SatisfactorylinearityoffowardcurrenttransferratiohFE •Wideareaofsafeoperation(ASO) •High-speedswitching •HighcollectortobasevoltageVCBO APPLICATIONS •Forhighbreakdownvoltagehigh-speedswitching

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •SatisfactorylinearityoffowardcurrenttransferratiohFE •Wideareaofsafeoperation(ASO) •High-speedswitching •HighcollectortobasevoltageVCBO APPLICATIONS •Forhighbreakdownvoltagehigh-speedswitching

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •SatisfactorylinearityoffowardcurrenttransferratiohFE •Wideareaofsafeoperation(ASO) •High-speedswitching •HighcollectortobasevoltageVCBO APPLICATIONS •Forhighbreakdownvoltagehigh-speedswitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching)

SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbe

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

DriverApplications?

DriverApplications Features ·HighDCcurrentgain. ·LargecurrentcapacityandwideASO. ·On-chipZenerdiodeof50±8Vbetweencollectorandbase. ·Uniformityincollector-to-basebreakdownvoltage duetoaccurateimpuritydiffusionprocess. ·Largeinductiveloadhandl

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

DriverApplications

DriverApplications Features •HighDCcurrentgain. •LargecurrentcapacityandwideASO. •On-chipZenerdiodeof50±8Vbetweencollectorand base. •Uniformityincollector-to-basebreakdownvoltage duetoaccurateimpuritydiffusionprocess. •Largeinductiveloadhandlingcap

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max)@IC=2A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •WideAreaofSafeOperation •ComplementtoType2SA1634 APPLICATIONS •Designedforaudioandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM

PowerTransistor(-80V,-4A)

ROHMRohm

罗姆罗姆半导体集团

ROHM

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage :VCE(sat)=1.0V(Max)@IC=2A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) •WideAreaofSafeOperation •ComplementtoType2SA1635 APPLICATIONS •Designedforaudioandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 800V 1A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

Panasonic Electronic Components

PanasonicElectronicComponents

SiliconNPNPowerTransistors

文件:162.08 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:109.4 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:162.08 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:162.08 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

HighDCcurrentgain.

文件:198.17 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SC400产品属性

  • 类型

    描述

  • 型号

    2SC400

  • 功能描述

    TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-18

更新时间:2025-7-4 20:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
01+
TO-126
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SANYO/三洋
22+
SOT252
100000
代理渠道/只做原装/可含税
ROHM/罗姆
24+
NA/
3578
原装现货,当天可交货,原型号开票
PANASONIC/松下
25+
TO220
54648
百分百原装现货 实单必成 欢迎询价
ROHM
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
SANYO
24+
SOT252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SANYO
06+/05
SOT252
2600
全新原装进口自己库存优势
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
23+
CAN
4540
优势库存
SANYO/三洋
22+
SOT252
20000
保证原装正品,假一陪十

2SC400芯片相关品牌

  • AMPHENOLCS
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  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

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