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2SC400晶体管资料
2SC400别名:2SC400三极管、2SC400晶体管、2SC400晶体三极管
2SC400生产厂家:日本东芝公司
2SC400制作材料:Si-NPN
2SC400性质:通用型 (Uni)
2SC400封装形式:直插封装
2SC400极限工作电压:30V
2SC400最大电流允许值:0.1A
2SC400最大工作频率:300MHZ
2SC400引脚数:3
2SC400最大耗散功率:
2SC400放大倍数:
2SC400图片代号:D-8
2SC400vtest:30
2SC400htest:300000000
- 2SC400atest:0.1
2SC400wtest:0
2SC400代换 2SC400用什么型号代替:BC108,BC172,BC183,BC208,BC238,BC383,BC548,BF583,2N2220,2N2221,2N2222,3DG120C,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC400 | LowLevelandGeneralPurposeAmplifiers 文件:84.74 Kbytes Page:1 Pages | MICRO-ELECTRONICS Micro Electronics | ||
iscSiliconNPNPowerTransistor DESCRIPTION •The2SC4001isdesignedforusesofhigh-resolutionmonitor TVapplications.Thismakesitpossibletoraisethevideoband Ofhigh-resolutionmonitorTVsto50MHz. FEATURES •Collector–EmitterSustainingVoltage- :VCBO=300V(Min) •ComplementtoType2SA1546 | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONPOWERTRANSISTOR DESCRIPTION The2SC4001isdesignedforuseofhigh-resolutionmonitorTVapplications.Thismakesitpossibletoraisethevideobandofhigh-resolutionmonitorTVsto50MHz. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
High-VoltageDriverApplications??? High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-VoltageDriverApplications? High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
NPNTripleDiffusedPlanarSiliconTransistor Features ●Highbreakdownvoltage ●AdoptionofMBITprocess ●ExcellenthFElinearity | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconNPNtransistorinaTO-252PlasticPackage. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity. Applications Highvoltagedriverapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighhFE •Lowcollector-to-emittersaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Highswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fapackage •SatisfactorylinearityoffowardcurrenttransferratiohFE •Wideareaofsafeoperation(ASO) •High-speedswitching •HighcollectortobasevoltageVCBO APPLICATIONS •Forhighbreakdownvoltagehigh-speedswitching | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fapackage •SatisfactorylinearityoffowardcurrenttransferratiohFE •Wideareaofsafeoperation(ASO) •High-speedswitching •HighcollectortobasevoltageVCBO APPLICATIONS •Forhighbreakdownvoltagehigh-speedswitching | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fapackage •SatisfactorylinearityoffowardcurrenttransferratiohFE •Wideareaofsafeoperation(ASO) •High-speedswitching •HighcollectortobasevoltageVCBO APPLICATIONS •Forhighbreakdownvoltagehigh-speedswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching) SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbe | PanasonicPanasonic Semiconductor 松下松下电器 | |||
DriverApplications? DriverApplications Features ·HighDCcurrentgain. ·LargecurrentcapacityandwideASO. ·On-chipZenerdiodeof50±8Vbetweencollectorandbase. ·Uniformityincollector-to-basebreakdownvoltage duetoaccurateimpuritydiffusionprocess. ·Largeinductiveloadhandl | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
DriverApplications DriverApplications Features •HighDCcurrentgain. •LargecurrentcapacityandwideASO. •On-chipZenerdiodeof50±8Vbetweencollectorand base. •Uniformityincollector-to-basebreakdownvoltage duetoaccurateimpuritydiffusionprocess. •Largeinductiveloadhandlingcap | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max)@IC=2A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •WideAreaofSafeOperation •ComplementtoType2SA1634 APPLICATIONS •Designedforaudioandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
PowerTransistor(-80V,-4A)
| ROHMRohm 罗姆罗姆半导体集团 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage :VCE(sat)=1.0V(Max)@IC=2A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) •WideAreaofSafeOperation •ComplementtoType2SA1635 APPLICATIONS •Designedforaudioandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 800V 1A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | PanasonicElectronicComponents Panasonic Electronic Components | |||
SiliconNPNPowerTransistors 文件:162.08 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors 文件:109.4 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors 文件:162.08 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors 文件:162.08 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
HighDCcurrentgain. 文件:198.17 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SC400产品属性
- 类型
描述
- 型号
2SC400
- 功能描述
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-18
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
01+ |
TO-126 |
400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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SANYO/三洋 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
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ROHM/罗姆 |
24+ |
NA/ |
3578 |
原装现货,当天可交货,原型号开票 |
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PANASONIC/松下 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ROHM |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
SANYO |
24+ |
SOT252 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
SANYO |
06+/05 |
SOT252 |
2600 |
全新原装进口自己库存优势 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
23+ |
CAN |
4540 |
优势库存 |
|||
SANYO/三洋 |
22+ |
SOT252 |
20000 |
保证原装正品,假一陪十 |
2SC400规格书下载地址
2SC400参数引脚图相关
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- 2SC3990
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- 2SC3987
- 2SC3986
- 2SC3985
- 2SC3984
- 2SC3983
- 2SC3982
- 2SC3981
- 2SC3980
- 2SC3979
- 2SC3978
- 2SC3977
- 2SC3976
2SC400数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
2020-11-52SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-222SC3998中文资料
2SC3998中文资料
2019-2-182SC4132T100R中文产品资料库
2SC4132T100R中文产品资料库
2019-2-15
DdatasheetPDF页码索引
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