Epitaxial Planar NPN Silicon Transistor

Epitaxial Planar NPN Silicon Transistor UHF/VHF Oscillator • Mixer

NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

High Frequency Amplifier Applications

Features High Transition Frequency: fT= 200MHz(typ.) Low Collector Output Capacitance: Cob= 3.5pF(typ.) Complementary to 2SA1483

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

NPN EPITAXIAL TYPE (TV HORIZONTAL DEFLECTION, TV CHROMA OUTPUT APPLICATIONS)

TV Horizontal Deflection Output Applications TV Chroma Output Applications High voltage: VCEO= 300 V Low output capacitance: Cob= 3.0 pF (typ.)

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low frequency

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications •Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emi

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emitter saturation v

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low f

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES · The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. · Dual chips in one package can

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications High power gain: Gpe= 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage.

NPN Plastic-Encapsulated Transistor

FEATURES High Frequency Amplifier Applications

TO-92 Plastic-Encapsulate Transistors

FEATURES High Frequency Amplifier Applications

TO-92 Plastic-Encapsulate Transistors

FEATURES High Frequency Amplifier Applications

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

FEATURES • The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES · The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. · Dual chips in one package can

Silicon NPN epitaxial planer type(For high speed switching)

■ Features ● High-speed switching. ● Low collector to emitter saturation voltage VCE(sat).

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR 1500-MHz BAND POWER AMPLIFIER INDUSTRIAL USE FEATURES · High efficiency, high power output and excellent linearity obtainable at 1500-MHz band Pout = 1.0 W, Gain = 8.0 dB TYP. @ VCC = 13.5 V, Iq = 5 mA, class AB · Internal emitter balance resistor

High-hFE, AF Amp Applications?????????

High hFE, AF Amplifier Applications Features • Adoption of FBET and MBIT processes. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO (VEBO≥15V). • Small Cob (Cob=2.0pF typ). Applications • Drivers, muting circuits.

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High voltage ,high speed APPLICATIONS • For power switching ,power amplifier, power driver and electronic supply applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High gain • High forward transfer gain |S21e|2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. • High Gain : Gpe=33dB(Typ.)(f=45MHz) • Good Linearity of hFE.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and eneral purpose applications

Silicon NPN Power Transistors

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications

isc Silicon NPN Power Transistor

DESCRIPTION 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) 2. High Switching Speed 3. High Reliability APPLICATIONS Designed for switching regulator and general purpose applications.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Application : Switching Regulator and General Purpose (High Voltage and High Speed Switching Transistor)

Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)

Application : Humidifier, DC-DC Converter, and General Purpose

SWITCH NPN TRANSISTOR

SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose

isc Silicon NPN Power Transistor

DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·Switching transistor ·With TO-220 package APPLICATIONS ·For humidifier ,DC-DC converter and general purpose applications

Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications

Silicon NPN Triple Diffused Planar Transistor

DESCRIPTION It is intented for use in power amplifier and switching applications.

50 Watt NPN Triple Diffused Planar Silicon Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • Good Linearity of hFE • Humidifier,DC-DC converter and general purpose.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage. Applications Humidifier, DC-DC converter, and general purpose.

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features HighVoltage, Large Current. Applications Humidifier, DC-DC converter, and general purpose.

Good Linearity of hFE

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • Good Linearity of hFE APPLICATIONS • Designed for use in humidifier , DC/DC converter and general purpose applications

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications

Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications

SWITCH NPN TRANSISTOR

SWITCH NPN TRANSISTOR APLLICATION * Humidifier, DC-DC converter and general purpose.

Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

Silicon NPN transistor in a TO-3P Plastic Package.

Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features High voltage. Applications Humidifier, DC-DC converter, and general purpose.

70 Watt NPN Triple Diffused Planar Silicon Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • Good Linearity of hFE • Humidifier,DC-DC converter and general purpose.