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2SC383晶体管资料
2SC383别名：2SC383三极管、2SC383晶体管、2SC383晶体三极管
2SC383生产厂家：日本东芝公司
2SC383制作材料：Si-NPN
2SC383性质：射频/高频放大 （HF）
2SC383封装形式：直插封装
2SC383极限工作电压：75V
2SC383最大电流允许值：0.05A
2SC383最大工作频率：>300MHZ
2SC383引脚数：3
2SC383最大耗散功率：
2SC383放大倍数：
2SC383图片代号：A-20
2SC383vtest：75
2SC383htest：300000100
- 2SC383atest：0.05
2SC383wtest：0
2SC383代换 2SC383用什么型号代替：BFW64,BFX94A,BFX5A,BSW63,BSW84,BSW85,2N2220A,2N2221A,2N2222A,3DG170C,
2SC383价格
参考价格：￥8.1618
型号：2SC3835 品牌：Sanken 备注：这里有2SC383多少钱，2025年最近7天走势，今日出价，今日竞价，2SC383批发/采购报价，2SC383行情走势销售排行榜，2SC383报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC383 | NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS) TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. • High Gain : Gpe=33dB(Typ.)(f=45MHz) • Good Linearity of hFE. | TOSHIBA 东芝 |   | |
2SC383 | NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS) | TOSHIBA 东芝 | | |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose | Sanken 三垦 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and eneral purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications. | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | SAVANTIC | | ||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose | Sanken 三垦 | | ||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose | Sanken 三垦 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) 2. High Switching Speed 3. High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Application : Switching Regulator and General Purpose (High Voltage and High Speed Switching Transistor) | Sanken 三垦 | | ||
Silicon NPN Power Transistors DESCRIPTION ·Switching transistor ·With TO-220 package APPLICATIONS ·For humidifier ,DC-DC converter and general purpose applications | SAVANTIC | | ||
SWITCH NPN TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose | UTC 友顺 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications | JMNIC 锦美电子 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose) Application : Humidifier, DC-DC Converter, and General Purpose | Sanken 三垦 | | ||
Silicon NPN Triple Diffused Planar Transistor DESCRIPTION It is intented for use in power amplifier and switching applications. | TGS | | ||
50 Watt NPN Triple Diffused Planar Silicon Transistor DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • Good Linearity of hFE • Humidifier,DC-DC converter and general purpose. | THINKISEMI 思祁半导体 | | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-to-emitter saturation voltage. Applications Humidifier, DC-DC converter, and general purpose. | FOSHAN 蓝箭电子 | | ||
Silicon NPN transistor in a TO-220F Plastic Package. Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features HighVoltage, Large Current. Applications Humidifier, DC-DC converter, and general purpose. | FOSHAN 蓝箭电子 | | ||
Good Linearity of hFE DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • Good Linearity of hFE APPLICATIONS • Designed for use in humidifier , DC/DC converter and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN transistor in a TO-3P Plastic Package. Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features High voltage. Applications Humidifier, DC-DC converter, and general purpose. | FOSHAN 蓝箭电子 | | ||
70 Watt NPN Triple Diffused Planar Silicon Transistor DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) • Good Linearity of hFE • Humidifier,DC-DC converter and general purpose. | THINKISEMI 思祁半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Switching transistor APPLICATIONS ·For humidifier ,DC-DC converter and general purpose applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications | ISC 无锡固电 | | ||
SWITCH NPN TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION * Humidifier, DC-DC converter and general purpose. | UTC 友顺 | | ||
Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose) Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose | Sanken 三垦 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Switching Ttransistors DESCRIPTION The is an epitaxial pianar type NPN silicon transistor | TGS | | ||
Silicon NPN Epitaxial Application Low frequency amplifier, switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF. | ROHM 罗姆 | | ||
Power Transistor Features ● High transition frequency. (Typ. fT = 1.5GHz) ● Small rbb.Cc and high gain. (Typ. 6ps) | KEXIN 科信电子 | | ||
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF. | ROHM 罗姆 | | ||
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF. | ROHM 罗姆 | | ||
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF. | ROHM 罗姆 | | ||
High Current-Gain Bandwidth Product DESCRIPTION • Low Noise NF = 3.5 dB TYP. @VCE = 6 V, IC = 2 mA, f = 500 MHz • High Current-Gain Bandwidth Product fT = 3.2 GHz TYP. @VCE = 10 V, IC = 10 mA, f = 500 MHz APPLICATIONS • Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. | ISC 无锡固电 | | ||
NPN Transistors ■ Features ● High transition frequency. ● Small rbb’·Cc and high gain. ● Small NF. | KEXIN 科信电子 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF. | ROHM 罗姆 | | ||
High-Frequency Amplifier Transistor NPN Silicon High-Frequency Amplifier Transistor NPN Silicon P/b Lead(Pb)-Free | WEITRON | | ||
NPN Plastic Encapsulated Transistor FEATURES • High transition frequency • Small rbb’·Cc and high gain • Small NF | SECOS 喜可士 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | | ||
NPN Transistors ■ Features ● High transition frequency. ● Small rbb’·Cc and high gain. ● Small NF. ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF. | ROHM 罗姆 | | ||
High-Frequency Amplifier Transistor Features ● High transition frequency. (Typ. fT= 1.5GHz) ● Small rbb.Cc and high gain. (Typ. 4ps) | KEXIN 科信电子 | | ||
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF. | ROHM 罗姆 | | ||
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High fT, small NF. Applications High frequency amplifier applications. | FOSHAN 蓝箭电子 | | ||
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF. | ROHM 罗姆 | | ||
HIGH-FREQUENCY AMPLIFIER TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR FEATURES * High transition frequency. * Small rbb’·Cc and high gain. * Small NF. | UTC 友顺 | |
2SC383产品属性
- 类型
描述
- 型号
2SC383
- 功能描述
2SC3833
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANKEN |
24+ |
TO-3P |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
NAXIMSEMI |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
ROHM |
2016+ |
SOT23 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
||||
ROHM |
04+ |
SOT23 |
401 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ROHM/罗姆 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ROHM/罗姆 |
25+ |
原装 |
32000 |
ROHM/罗姆全新特价2SC3838KT147N即刻询购立享优惠#长期有货 |
|||
RIOHM |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ROHM |
23+ |
SMT3 (SOT-346) (SC-59) |
50000 |
原装正品 支持实单 |
|||
CJ/长电 |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
2SC383芯片相关品牌
2SC383规格书下载地址
2SC383参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC3856
- 2SC3855
- 2SC3854
- 2SC3853
- 2SC3852
- 2SC3851
- 2SC3850
- 2SC3847
- 2SC3846
- 2SC3845
- 2SC3844
- 2SC3843
- 2SC3842
- 2SC3841
- 2SC3840
- 2SC384
- 2SC3839K
- 2SC3838K
- 2SC3838
- 2SC3837K
- 2SC3836
- 2SC3835
- 2SC3834
- 2SC3833
- 2SC3832
- 2SC3831
- 2SC3830
- 2SC383(TM,AMT)
- 2SC3829
- 2SC3828
- 2SC3827
- 2SC3826
- 2SC3825
- 2SC3824(A)
- 2SC3824
- 2SC3823
- 2SC3822
- 2SC3821
- 2SC3820
- 2SC382(TM)
- 2SC382
- 2SC3819
- 2SC3818
- 2SC3817
- 2SC3816
- 2SC3815
- 2SC3814
- 2SC3813
- 2SC3812
- 2SC3811
- 2SC3810
- 2SC381
- 2SC3809
- 2SC3808
- 2SC3807
- 2SC3805
- 2SC3803
- 2SC3799
- 2SC3798
- 2SC3797
- 2SC3796
- 2SC3795
- 2SC3794
- 2SC3793
2SC383数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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2019-2-15
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