HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

FEATURES ● High Gain Bandwidth Product: fT = 200 MHz MIN. ● Complementary to 2SA1464

NPN Silicon Epitaxia

Features ● High gain bandwidth product: fT=200MHz.

Old Company Name in Catalogs and Other Documents

FEATURES ● High Gain Bandwidth Product: fT = 200 MHz MIN. ● Complementary to 2SA1464

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

NPN Transistors

■ Features ● High Gain Bandwidth Product:fT=200MHz(min) ● Complementary to 2SA1464-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish