NPN Epitaxial Planar Silicon Transistor

Features ● High DC current gain (hFE=800 to 3200). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.5V). ● Large current capacity (IC=1.2V). ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

NPN Silicon Epitaxial Planar Transistor

FEATURES • Small Flat Package. • Large Current Capacity. • High DC Current Gain • Low VCE(sat) APPLICATION LF Amplifiers, Various Drivers, Muting Circuit

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High DC Current Gain ● Low VCE(sat) ● Large Current Capacity APPLICATIONS ● LF Amplifiers, Various Drivers, Muting Circuit

Plastic-Encapsulate Transistors

FEATURES • High DC current gain. • Low collector-to-emitter saturation voltage. • Large current capacity. • Very small size making it easy to provide high- Density,small-sized hybrid IC S

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High DC Current Gain ● Low VCE(sat) ● Large Current Capacity APPLICATIONS ● LF Amplifiers, Various Drivers, Muting Circuit