High-hFE, Low-Frequency General-Purpose Amp Applications???????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • Large current capacity (IC=1.2V). • Very small size making it easy to provide highdensity, small-sized hybrid IC’s

General-Purpose Amplifier Applications

FEATURES ● High DC current gain. ● Low collector-to-emitter saturation voltage. ● Large current capacity. ● Very small size making it easy to provide highDensity,small-sized hybrid IC′ s. APPLICATIONS LFamplifiers,various drivers,muting circuit

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High DC Current Gain ● Low VCE(sat) ● Large Current Capacity APPLICATIONS ● LF Amplifiers, Various Drivers, Muting Circuit

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High DC Current Gain ● Low VCE(sat) ● Large Current Capacity APPLICATIONS ● LF Amplifiers, Various Drivers, Muting Circuit

NPN Epitaxial Planar Silicon Transistor

Features ● High DC current gain (hFE=800 to 3200). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.5V). ● Large current capacity (IC=1.2V). ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

NPN Silicon Epitaxial Planar Transistor

FEATURES • Small Flat Package. • Large Current Capacity. • High DC Current Gain • Low VCE(sat) APPLICATION LF Amplifiers, Various Drivers, Muting Circuit

Plastic-Encapsulate Transistors

FEATURES • High DC current gain. • Low collector-to-emitter saturation voltage. • Large current capacity. • Very small size making it easy to provide high- Density,small-sized hybrid IC S

High hFE,Low-Frequency General-Purpose Amplifier Applications

FEATURES High DC current gain. Low collector-to-emitter saturation voltage. Large current capacity. Very small size making it easy to provide high- Density,small-sized hybrid IC′s. APPLICATIONS LFamplifiers,various drivers,muting circuit

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 1.2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

双极型晶体管

双极型晶体管

晶体管

1.2 A , 30 V NPN Plastic-Encapsulate Transistor

文件：269.83 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistor

文件：269.82 Kbytes Page：2 Pages

TRANSISTOR

文件：126.6 Kbytes Page：1 Pages