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2SC362晶体管资料
2SC362别名：2SC362三极管、2SC362晶体管、2SC362晶体三极管
2SC362生产厂家：日本东芝公司
2SC362制作材料：Si-NPN
2SC362性质：射频/高频放大 （HF）
2SC362封装形式：直插封装
2SC362极限工作电压：
2SC362最大电流允许值：
2SC362最大工作频率：150MHZ
2SC362引脚数：3
2SC362最大耗散功率：
2SC362放大倍数：β=140
2SC362图片代号：A-20
2SC362vtest：0
2SC362htest：150000000
- 2SC362atest：0
2SC362wtest：0
2SC362代换 2SC362用什么型号代替：BF240,BF241,BF254,BF255,BF454,BF494,BF594,BF595,3DG120A,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN TRIPLE DIFFUSED TYPE (COLOR TV HORIZONTAL DRIVER, CHROMA OUTPUT APPLICATIONS) Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V • Recommended for chroma output and driver applications for line-operated TV horizontal. | TOSHIBA 东芝 |   | ||
NPN EPITAXIAL TYPE (COLOR TV VERT. DEFLECTION,CLASS B SOUND OUTPUT APPLICATIONS) Color TV Vertitcal Deflection Output Applications Color TV Class-B Sound Output Applications • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TVs. • Complementary to 2SA1408. | TOSHIBA 东芝 | | ||
SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) | RENESAS 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) | NEC 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) | NEC 瑞萨 | | ||
2SC3623A SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
NPN SILICON TRANSISTOR FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) | NEC 瑞萨 | | ||
SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) | RENESAS 瑞萨 | | ||
2SC3623A SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
NPN Silicon Epitaxial Transistor Features ● High DC current Gain: hFE = 1000 to 3200. ● Low VCE(sat): (VCE(sat) = 0.07 V TYP). | KEXIN 科信电子 | | ||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | | ||
Old Company Name in Catalogs and Other Documents FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | RENESAS 瑞萨 | | ||
Old Company Name in Catalogs and Other Documents FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | RENESAS 瑞萨 | | ||
Old Company Name in Catalogs and Other Documents FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | RENESAS 瑞萨 | | ||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | | ||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | | ||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High collector breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High collector breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications | ISC 无锡固电 | | ||
Color TV Horizontal Driver Applications Color TV Chroma Output Applications 文件：142.91 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Color TV Horizontal Driver Applications Color TV Chroma Output Applications 文件：142.91 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial Type (PCT Process) Color TV Vertitcal Deflection Output Applications 文件：130.669 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
isc Silicon NPN Power Transistor 文件：289.95 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Type (PCT Process) Color TV Vertitcal Deflection Output Applications 文件：130.669 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 50V 0.15A SC59 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon NPN Power Transistors 文件：116.33 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：116.1 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) 文件：146.18 Kbytes Page：3 Pages | Mitsubishi 三菱电机 | | ||
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) 文件：145.91 Kbytes Page：3 Pages | Mitsubishi 三菱电机 | |
2SC362产品属性
- 类型
描述
- 型号
2SC362
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+/25+ |
7900 |
原装正品现货库存价优 |
||||
NEC |
22+23+ |
SOT-23 |
8000 |
新到现货，只做原装进口 |
|||
RENESAS |
SOT23 |
30000000 |
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上 |
||||
NEC |
25+ |
SOT23L16 |
32000 |
NEC全新特价2SC3624A-T1B即刻询购立享优惠#长期有货 |
|||
NEC |
2023+ |
SOT-23 |
58000 |
进口原装,现货热卖 |
|||
NEC |
24+ |
SOT-23 |
30100 |
只做正品原装现货 |
|||
NEC |
23+ |
SOT-23 |
60000 |
现货库存 |
|||
NEC |
24+ |
SOT-23 |
65200 |
一级代理/放心采购 |
|||
RENESAS/瑞萨 |
24+ |
SOT-23 |
60000 |
||||
RENESAS/瑞萨 |
2023+ |
SOT-23 |
6000 |
一级代理优势现货,全新正品直营店 |
2SC362芯片相关品牌
2SC362规格书下载地址
2SC362参数引脚图相关
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- 2SC3623
- 2SC3622(A)
- 2SC3622
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- 2SC3619
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- 2SC3602
- 2SC3601
- 2SC3600
- 2SC3599
- 2SC3598
- 2SC3597
- 2SC3596
- 2SC3595
2SC362数据表相关新闻
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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