High-Frequency Amplifier Transistor NPN Silicon

FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

NPN Silicon Plastic-Encapsulate Transistor

FEATURES • Power Dissipation • RoHS Compliant Product

MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High

HIGH FREQUENCY LOW NOISE AMPLIFIER

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