5A , 100V NPN Epitaxial Planar Silicon Transistor

FEATURES • Low Collector-to-Emitter Saturation Voltage • Excllent Linearity of hFE • High fT • Fast Switching Time

NPN Plastic-Encapsulate Transistors

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中等功率双极型晶体管

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS)

High Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat)= 0.4 V (max) (IC= 3 A) • High speed switching time: tstg= 1.0 µs (typ.)

5A , 100V NPN Epitaxial Planar Silicon Transistor

FEATURES • Low Collector-to-Emitter Saturation Voltage • Excllent Linearity of hFE • High fT • Fast Switching Time

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon NPN Power Transistor

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High Current Switching Applications DC-DC Converter Applications

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封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：带盒（TB） 描述：TRANS NPN 80V 5A TO251 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个