5A,100VNPNEpitaxialPlanarSiliconTransistor

FEATURES •LowCollector-to-EmitterSaturationVoltage •ExcllentLinearityofhFE •HighfT •FastSwitchingTime

NPNPlastic-EncapsulateTransistors

文件：438.02 Kbytes Page：3 Pages

NPNEPITAXIALTYPE(HIGHCURRENTSWITCINGAPPLICATIONS)

HighCurrentSwitchingApplications DC-DCConverterApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max)(IC=3A) •Highspeedswitchingtime:tstg=1.0µs(typ.)

5A,100VNPNEpitaxialPlanarSiliconTransistor

FEATURES •LowCollector-to-EmitterSaturationVoltage •ExcllentLinearityofhFE •HighfT •FastSwitchingTime

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

iscSiliconNPNPowerTransistor

文件：270.91 Kbytes Page：2 Pages

HighCurrentSwitchingApplicationsDC-DCConverterApplications

文件：187.22 Kbytes Page：5 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：带盒（TB） 描述：TRANS NPN 80V 5A TO251 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个