2SC330晶体管资料

  • 2SC330别名:2SC330三极管、2SC330晶体管、2SC330晶体三极管

  • 2SC330生产厂家:日本冲电气工业股份公司

  • 2SC330制作材料:Si-NPN

  • 2SC330性质:超高频/特高频 (UHF)

  • 2SC330封装形式:贴片封装

  • 2SC330极限工作电压:20V

  • 2SC330最大电流允许值:0.02A

  • 2SC330最大工作频率:3.5GHZ

  • 2SC330引脚数:3

  • 2SC330最大耗散功率:0.2W

  • 2SC330放大倍数

  • 2SC330图片代号:G-21

  • 2SC330vtest:20

  • 2SC330htest:3500000000

  • 2SC330atest:0.02

  • 2SC330wtest:0.2

  • 2SC330代换 2SC330用什么型号代替:BFQ59,BFQ60,BFQ70,BFR34,BFR90,BFR91,BFR96,BFR97,BFT13,BFT14,2G913C,

型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Lowsaturationvoltage ·Wideareaofsafeoperation APPLICATIONS ·Powerandgeneralpurposeapplication

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) •LowCollectorSaturationVoltage- :VCE(sat)=0.5V(Max)@IC=5A APPLICATIONS •DesignedforDC-DCconverter,emergencylighting inverterandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONNPNEPITAXIALPLANARTYPE

VHF-UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS. FEATURES .NF=1.7dB,lS21el2=14.5dB(f=500MHz) .NF=2.3dB,lS21el2=9dB(f=1000MHz)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTORSILICONNPNEPITAXIALPLANARTYPEVHF-UHFBANDLOWNOISEAMPLIFIERAPPLICATION

TOSHIBATRANSISTORSILICONNPNEPITAXIALPLANARTYPE VHF-UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTOR

3SK121datasheetpdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

5A,100VNPNEpitaxialPlanarSiliconTransistor

FEATURES •LowCollector-to-EmitterSaturationVoltage •ExcllentLinearityofhFE •HighfT •FastSwitchingTime

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(HIGHCURRENTSWITCINGAPPLICATIONS)

HighCurrentSwitchingApplications DC-DCConverterApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max)(IC=3A) •Highspeedswitchingtime:tstg=1.0µs(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

5A,100VNPNEpitaxialPlanarSiliconTransistor

FEATURES •LowCollector-to-EmitterSaturationVoltage •ExcllentLinearityofhFE •HighfT •FastSwitchingTime

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

5A,100VNPNEpitaxialPlanarSiliconTransistor

FEATURES •LowCollector-to-EmitterSaturationVoltage •ExcllentLinearityofhFE •HighfT •FastSwitchingTime

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Collector-emittersustainingvoltage VCEO(sus)=400V(Min) ·Fastswitchingtimes APPLICATIONS ·Switchingregulatorandhighvoltageswitchingapplications ·HighspeedDC-DCconverterapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Collector-emittersustainingvoltage VCEO(sus)=400V(Min) ·Fastswitchingtimes APPLICATIONS ·Switchingregulatorandhighvoltageswitchingapplications ·HighspeedDC-DCconverterapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERTRANSISTORS(10A,400V,100W)

SWITCHMODESERIESNPNPOWERTRANSISTORS

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATION)

1.SwitchingregulatorandHighvoltageSwitchingApplications. 2.HighSpeedDC-DCConveterApplications.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(HIGHSPEEDANDHIGHVOLTAGESWITCHING,SWITCHINGREGULATOR,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS)

High-SpeedandHigh-VoltageSwitchingApplications SwitchingRegulatorApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=1.0μs(max),tf=1.0μs(max)(IC=5A) •Highcollectorbreakdownvoltage:VCEO=800V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Excellentswitchingtimes :tr=1.0µs(Max.),tf=1.0µs(Max.)(IC=5A) ·Highcollectorbreakdownvoltage:VCEO=800V APPLICATIONS ·Highspeed,highvoltageswitchingapplications ·Switchingregulatorapplications ·HighspeedDC-DCconverter

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Excellentswitchingtimes :tr=1.0μs(Max.),tf=1.0μs(Max.)(IC=5A) ·Highcollectorbreakdownvoltage:VCEO=800V APPLICATIONS ·Highspeed,highvoltageswitchingapplications ·Switchingregulatorapplications ·HighspeedDC-DCconverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HIGHCURRENTSWITCHINGAPPLICATIONS.

FEATURES: -LowCollectorSaturationVoltage :VCE(sat)=0.4V(Max.)atIc=3A -HighSpeedSwitchingTime:'tstg-1.0ms(Typ.) -Complementaryto2SA1308.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·Highcollectorbreakdownvoltage ·Excellentswitchingtimes APPLICATIONS ·Switchingregulatorsandhighvoltageswitchingapplications ·HighspeedDC-DCconverterapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·Highcollectorbreakdownvoltage ·Excellentswitchingtimes APPLICATIONS ·Switchingregulatorsandhighvoltageswitchingapplications ·HighspeedDC-DCconverterapplication

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONNPNTRIPLEDIFFUSEDTYPE

SWITCHINGREGULATORANDHIGHVOLTAGESWITCHINGAPPLICATION. HIGHSPEEDDC-DCCONVERTERAPPLICATION.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) •HighSwitchingSpeed APPLICATIONS •Switchingregulatorandhighvoltageswitchingapplications. •HighspeedDC-DCconverterapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:133.82 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

文件:128.1 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

文件:270.91 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSiliconPlastic-EncapsulateTransistor

文件:212.39 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

TO-251-3LPlastic-EncapsulateTransistors

文件:289.18 Kbytes Page:3 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

HighCurrentSwitchingApplications

文件:173.56 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighCurrentSwitchingApplicationsDC-DCConverterApplications

文件:187.22 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighCurrentSwitchingApplicationsDC-DCConverterApplications

文件:187.22 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEpitaxialPlanarSiliconTransistor

文件:83.18 Kbytes Page:1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconNPNPowerTransistor

文件:262.71 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HighCurrentSwitchingApplications

文件:173.56 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNPlastic-EncapsulateTransistors

文件:438.02 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:带盒(TB) 描述:TRANS NPN 80V 5A TO251 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

HighCurrentSwitchingApplications

文件:173.56 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNPlastic-EncapsulateTransistors

文件:438.02 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:TRANS NPN 80V 5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SiliconNPNPowerTransistor

文件:133.95 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:181.37 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNTripleDiffusedTypeHigh-SpeedandHigh-VoltageSwitchingApplications

文件:171.67 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:239.89 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNTripleDiffusedTypeHigh-SpeedandHigh-VoltageSwitchingApplications

文件:171.67 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:166.79 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

2SC330产品属性

  • 类型

    描述

  • 型号

    2SC330

  • 制造商

    SAVANTIC

  • 制造商全称

    Savantic, Inc.

  • 功能描述

    Silicon NPN Power Transistors

更新时间:2025-7-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
14568
原装现货,当天可交货,原型号开票
TOSHIBA/东芝
22+
TO-3P
25000
只做原装进口现货,专注配单
FUJU
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ISC
2022
TO-3P
3000
全新原装现货热卖
TOS
23+
TO-3P
9526
TOSHIBA
25+
TO-3P
6500
十七年专营原装现货一手货源,样品免费送
TOSHIBA
24+
60000
TOSHIBA/东芝
24+
TO-3P
42000
郑重承诺只做原装进口现货
TOSHIBA
00+
TO-3P
22
一级代理,专注军工、汽车、医疗、工业、新能源、电力

2SC330芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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