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2SC321晶体管资料
2SC321别名：2SC321三极管、2SC321晶体管、2SC321晶体三极管
2SC321生产厂家：日本日立公司
2SC321制作材料：Si-NPN
2SC321性质：射频/高频放大 （HF）_开关管 （S）
2SC321封装形式：直插封装
2SC321极限工作电压：40V
2SC321最大电流允许值：0.2A
2SC321最大工作频率：<1MHZ或未知
2SC321引脚数：3
2SC321最大耗散功率：0.36W
2SC321放大倍数：β>30
2SC321图片代号：C-62
2SC321vtest：40
2SC321htest：999900
- 2SC321atest：0.2
2SC321wtest：0.36
2SC321代换 2SC321用什么型号代替：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,2N2368(A),2N2369(A),
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High breakdown voltage APPLICATIONS • For high speed switching applications | SAVANTIC |   | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High breakdown voltage APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High breakdown voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emiiter Sustaining Voltage- : VCEO(sus)= 400V(Min.) • Low Collector Saturation Voltage :VCE(sat)=1.0V(Max.)@lc-5A • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emiiter Sustaining Voltage- : VCEo(sus)= 500V(Min.) • Low Collector Saturation Voltage : VcE(Mt)=1.0V(Max.)@lc=3A • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Low collector-emitter saturation voltage (VCE(sat)) ● Full Pack package for simplified mounting on a heat sink with one screw | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Low collector-emitter saturation voltage (VCE(sat)) ● Full Pack package for simplified mounting on a heat sink with one screw | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications | JMNIC 锦美电子 | | ||
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE | NEC 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR FOR 860-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE FEATURES • High gain and high power output at 860 MHz Pout = 52 W @ VCC = 28 V, Pin = 10 W, class AB • Push-pull structure allows easy design of wideband amplifier • Internal emitter balance resistor • Internal impedance matching circuit • High reliability due to gold electrodes | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors 文件：119.38 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：157.76 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：157.76 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：118.33 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：118.7 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：131.67 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors 文件：120.53 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：161.84 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：161.84 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：120.53 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：109.9 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：152.9 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：152.9 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
High Voltage Ultra High Speed Switching Transistors 文件：190.73 Kbytes Page：1 Pages | SHINDENGEN | |
2SC321产品属性
- 类型
描述
- 型号
2SC321
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
||||
ORIGIN |
20+ |
0 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
ORIGIN |
23+ |
0 |
5000 |
专注配单,只做原装进口现货 |
|||
ORIGIN |
专业铁帽 |
TO-3 |
10 |
原装铁帽专营,代理渠道量大可订货 |
|||
NEC |
24+ |
TO-62 |
9630 |
我们只做原装正品现货!量大价优! |
|||
13760113795 |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ORIGIN |
25+23+ |
New |
31850 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
23+ |
TO-62 |
1050 |
专营高频管模块,全新原装! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
2SC321规格书下载地址
2SC321参数引脚图相关
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2SC321数据表相关新闻
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
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2SC2859中文资料
2019-2-18
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