Si NPN Epitaxial Planar

Si NPN Epitaxial Planar RF Wide band Low-noise Amplifier

isc Silicon NPN RF Transistor

Silicon NPN RF Transistor DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier.

TRANSISTOR (FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS)

For Audio Amplifier and Switching Applications • High DC current gain: hFE= 600~3600 • High breakdown voltage: VCEO= 50 V • High collector current: IC= 150 mA (max)

TRANSISTOR (FOR AUDIO AMPLFIER AND SWITCHING APPLICATIONS)

For Audio Amplifier and Switching Applications • High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

High-VEBO,AF Amp Applications

High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown.

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

160V/700mA Switching Applications

Features · High breakdown voltage. · Large current capacity. · Using MBIT process

160V/700mA Switching Applications

160V/700mA switching application Uses · Color TV sound output, converters, inverters Features · High breakdown voltage. · Large current capacity. · Using MBIT process

160V/1.5A Switching Applications

160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.45V(Max) @IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,high speed switching

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications ·160V/1.5A switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications ·160V/1.5A switching applications

Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications

文件：459.63 Kbytes Page：4 Pages

Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications

文件：459.63 Kbytes Page：4 Pages

For Audio Amplifier and Switching Applications

文件：147.3 Kbytes Page：4 Pages

For Audio Amplifier and Switching Applications

文件：147.3 Kbytes Page：4 Pages

NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp Applications

Trans GP BJT NPN 160V 0.7A 3-Pin TO-126

Silicon NPN Power Transistors

文件：101.5 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：156.36 Kbytes Page：4 Pages

NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications

Silicon NPN Power Transistors

文件：202.88 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：202.88 Kbytes Page：4 Pages