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位置：首页 > IC中文资料 > 2SC305

2SC305晶体管资料

  • 2SC305别名：2SC305三极管、2SC305晶体管、2SC305晶体三极管

  • 2SC305生产厂家：日本三菱公司

  • 2SC305制作材料：Si-NPN

  • 2SC305性质：射频/高频放大 （HF）_通用型 （Uni）

  • 2SC305封装形式：直插封装

  • 2SC305极限工作电压：80V

  • 2SC305最大电流允许值：0.5A

  • 2SC305最大工作频率：220MHZ

  • 2SC305引脚数：3

  • 2SC305最大耗散功率：0.8W

  • 2SC305放大倍数：

  • 2SC305图片代号：C-40

  • 2SC305vtest：80

  • 2SC305htest：220000000

  • 2SC305atest：0.5

  • 2SC305wtest：0.8

  • 2SC305代换 2SC305用什么型号代替：BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2N1990,2N2217,3DK9D,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC3051

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION.

FEATURES: -Excellent Switching Times : tr=1.0μs (Max.), tf=1.5us (Max.) at Ic=0.5A -High Collector Breakdown Voltage: VCEO=400V

TOSHIBA

东芝

2SC3052

Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

BILIN

银河微电

2SC3052

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain

HTSEMI

金誉半导体

2SC3052

LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forward gain. ● Super mini packa

ISAHAYA

谏早电子

2SC3052

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

2SC3052

NPN Transistor

Features ● Collector current :IC=0.2A ● Power dissipation :PC=0.15W

KEXIN

科信电子

2SC3052

NPN Silicon Plastic-Encapsulate Transistor

FEATURE • Excellent linearity of DC forward current gain. • Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)

SECOS

喜可士

2SC3052

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3052

Plastic-Encapsulate Transistors

FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

GWSEMI

唯圣电子

2SC3052

NPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Power Dissipation of 150mW • Low collector to emitter saturation voltage • Excellent linearity of DC forward current gain MECHANICAL DATA • Case:SOT-23(TO-236) • Terminals:Plated solderable per MIL-STD-750,method 2026 • Mounting Positi

JINGHENG

晶恒

2SC3052

Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

LUGUANG

鲁光电子

2SC3052

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SC3052E

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3052-E

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu

MCC

2SC3052F

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3052-F

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu

MCC

2SC3052G

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3052-G

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu

MCC

2SC3052-SOT-23

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

2SC3052-SOT-23-3L

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

2SC3053

FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

ISAHAYA

谏早电子

2SC3055

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package · High breakdown voltage · Wide area of safe operation APPLICATIONS · For switching regulator applications

ISC

无锡固电

2SC3055

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector

SAVANTIC

2SC3058

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For switching regulator and DC/DC converter applications

JMNIC

锦美电子

2SC3058

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For switching regulator and DC/DC converter applications

SAVANTIC

2SC3058

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For switching regulator and DC/DC converter applications

ISC

无锡固电

2SC3058A

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For switching regulator and DC/DC converter applications

ISC

无锡固电

2SC3058A

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For switching regulator and DC/DC converter applications

SAVANTIC

2SC3059

Silicon High Speed Power Transistor

DESCRIPTION This series silicon NPN planer general purpose, high power switching transistors fabricated with Fujitsus unique Ring Emitter Transistor (RET) technology. Features • High Voltage • Ultra-fast switching • Large safe operating area Applications • Switching regulators • Motor cont

Fujitsu

富士通

2SC3052

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：189.54 Kbytes Page：4 Pages

ISAHAYA

谏早电子

2SC3052

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件：298.22 Kbytes Page：2 Pages

RECTRON

丽正国际

2SC3052

NPN Plastic-Encapsulate Transistor

文件：643.52 Kbytes Page：3 Pages

SECOS

喜可士

2SC3052

50V,0.2A,General Purpose NPN Bipolar Transistor

GALAXY

银河微电

2SC3052

晶体三极管

ZOCA

卓凯半导体

2SC3052

NPN小信号三极管

CHINABASE

创基电子

2SC3052_10

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：189.54 Kbytes Page：4 Pages

ISAHAYA

谏早电子

2SC3052_11

NPN Plastic-Encapsulate Transistor

文件：643.52 Kbytes Page：3 Pages

SECOS

喜可士

2SC3052_15

NPN Plastic-Encapsulate Transistor

文件：643.52 Kbytes Page：3 Pages

SECOS

喜可士

2SC3052_15

TRANSISTOR (NPN)

文件：129.22 Kbytes Page：1 Pages

WINNERJOIN

永而佳

2SC3053

FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：247.11 Kbytes Page：6 Pages

ISAHAYA

谏早电子

2SC3053_10

FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：247.11 Kbytes Page：6 Pages

ISAHAYA

谏早电子

2SC3055

Silicon NPN Power Transistor

文件：134.41 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC3055

Silicon NPN Power Transistors

文件：99.99 Kbytes Page：3 Pages

SAVANTIC

2SC3058

Silicon NPN Power Transistor

文件：136.17 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC3058

Silicon NPN Power Transistors

文件：111.2 Kbytes Page：3 Pages

SAVANTIC

2SC3058_15

Silicon NPN Power Transistors

文件：47.98 Kbytes Page：3 Pages

JMNIC

锦美电子

2SC3058_2014

Silicon NPN Power Transistors

文件：47.98 Kbytes Page：3 Pages

JMNIC

锦美电子

2SC3058A

Silicon NPN Power Transistors

文件：111.26 Kbytes Page：3 Pages

SAVANTIC

2SC305产品属性

  • 类型

    描述

  • 型号

    2SC305

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR80V .5A .8W

2SC305供应商更多...

更新时间：2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SC3052
MITSUBISHI/三菱
24+
NA/
13400
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科芯源微电子有限公司
2SC3052
MITSUBISHI/三菱
25+
SOT-23
54558
百分百原装现货 实单必成 欢迎询价
询价
深圳市富芯乐电子科技有限公司
2SC3052
MITSUBISHI
24+
SOT-23
4000
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市创新迹电子有限公司
2SC3052
MITSUBIS
22+
SOT-23
20000
只做原装
询价
深圳市赛美科科技有限公司
2SC3052
三菱
SOT-23
16000
一级代理 原装正品假一罚十价格优势长期供货
询价
中天科工半导体（深圳）有限公司
2SC3051
SANYO/三洋
20+
TO-126
38900
原装优势主营型号-可开原型号增税票
询价
深圳市凯睿晟科技有限公司
2SC3052
MITSUBISHI/三菱
21+
SOT23
120000
长期代理优势供应
询价
深圳市振宏微科技有限公司
2SC3052
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市华斯顿科技有限公司
2SC3052
长电
25+23+
SOT-23
23861
绝对原装正品全新进口深圳现货
询价
贸泽芯城（深圳）电子科技有限公司
2SC3052/LE
MITSUBISHI/三菱
23+
SOT-23
4000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价

2SC305芯片相关品牌

2SC305规格书下载地址

2SC305参数引脚图相关

2SC305数据表相关新闻

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    2023-1-31

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    2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.

    2021-3-23

  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14

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    产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors

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