2SC305晶体管资料

  • 2SC305别名:2SC305三极管、2SC305晶体管、2SC305晶体三极管

  • 2SC305生产厂家:日本三菱公司

  • 2SC305制作材料:Si-NPN

  • 2SC305性质:射频/高频放大 (HF)_通用型 (Uni)

  • 2SC305封装形式:直插封装

  • 2SC305极限工作电压:80V

  • 2SC305最大电流允许值:0.5A

  • 2SC305最大工作频率:220MHZ

  • 2SC305引脚数:3

  • 2SC305最大耗散功率:0.8W

  • 2SC305放大倍数

  • 2SC305图片代号:C-40

  • 2SC305vtest:80

  • 2SC305htest:220000000

  • 2SC305atest:0.5

  • 2SC305wtest:0.8

  • 2SC305代换 2SC305用什么型号代替:BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2N1990,2N2217,3DK9D,

型号 功能描述 生产厂家&企业 LOGO 操作

SWITCHINGREGULATORANDHIGHVOLTAGESWITCHINGAPPLICATIONS.HIGHSPEEDDC-DCCONVERTERAPPLICATION.

FEATURES: -ExcellentSwitchingTimes :tr=1.0μs(Max.),tf=1.5us(Max.)atIc=0.5A -HighCollectorBreakdownVoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

Plastic-EncapsulateTransistors

FEATURES Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) ExcellentlinearityofDCforwardcurrentgain

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURES ●LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) ●ExcellentlinearityofDCforwardcurrentgain

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

LOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION 2SC3052isaminipackageresinsealedsiliconNPNepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=0.3Vmax(@Ic=100mA,IB=10mA) ●ExcellentlinearityofDCforwardgain. ●Superminipacka

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

NPNTransistor

Features ●Collectorcurrent:IC=0.2A ●Powerdissipation:PC=0.15W

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNSiliconPlastic-EncapsulateTransistor

FEATURE •ExcellentlinearityofDCforwardcurrentgain. •LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax.(@IC=100mA,IB=10mA)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:0.15W(Tamb=25℃) CollectorcurrentICM:0.2A Collector-basevoltageV(BR)CBO:50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNPlastic-EncapsulateTransistors

FEATURES •EpoxymeetsUL-94V-0flammabilityrating •PowerDissipationof150mW •Lowcollectortoemittersaturationvoltage •ExcellentlinearityofDCforwardcurrentgain MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPositi

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

FORHIGHFREQUENCYAMPLIFY,MEDIUMFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

FORHIGHFREQUENCYAMPLIFY,MEDIUMFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highbreakdownvoltage ·Wideareaofsafeoperation APPLICATIONS ·Forswitchingregulatorapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highbreakdownvoltage ·Wideareaofsafeoperation APPLICATIONS ·Forswitchingregulatorapplications VCBOCollector-basevoltageOpenemitter450V VCEOCollector-emittervoltageOpenbase400V VEBOEmitter-basevoltageOpencollector7V ICCollector

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •ForswitchingregulatorandDC/DCconverterapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •ForswitchingregulatorandDC/DCconverterapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •ForswitchingregulatorandDC/DCconverterapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •ForswitchingregulatorandDC/DCconverterapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNPowerTransistor

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •ForswitchingregulatorandDC/DCconverterapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconHighSpeedPowerTransistor

DESCRIPTION ThisseriessiliconNPNplanergeneralpurpose,highpowerswitchingtransistorsfabricatedwithFujitsusuniqueRingEmitterTransistor(RET)technology. Features •HighVoltage •Ultra-fastswitching •Largesafeoperatingarea Applications •Switchingregulators •Motorcont

FujitsuFujitsu Component Limited.

富士通富士通株式会社

Fujitsu

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

文件:189.54 Kbytes Page:4 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

NPNPlastic-EncapsulateTransistor

文件:643.52 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)

文件:298.22 Kbytes Page:2 Pages

RECTRON

Rectron Semiconductor

RECTRON

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

文件:189.54 Kbytes Page:4 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

NPNPlastic-EncapsulateTransistor

文件:643.52 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNPlastic-EncapsulateTransistor

文件:643.52 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

TRANSISTOR(NPN)

文件:129.22 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

FORHIGHFREQUENCYAMPLIFY,MEDIUMFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

文件:247.11 Kbytes Page:6 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORHIGHFREQUENCYAMPLIFY,MEDIUMFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

文件:247.11 Kbytes Page:6 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

SiliconNPNPowerTransistors

文件:99.99 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

文件:134.41 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:111.2 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

文件:136.17 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:47.98 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:47.98 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:111.26 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

2SC305产品属性

  • 类型

    描述

  • 型号

    2SC305

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR80V .5A .8W

更新时间:2025-7-6 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MITSUBISH
2024
SOT23
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
长电
25+23+
SOT-23
23861
绝对原装正品全新进口深圳现货
MITSUBISHI三菱/ISAHAYA菱
24+
SOT-23
15200
新进库存/原装
04+
SOT23(Pb free)
1526
全新原装!优势库存热卖中!
长电
24+
SOT-23
9000
只做原装正品 有挂有货 假一赔十
MITSUBISHI/IDC
23+
SOT-23
24190
原装正品代理渠道价格优势
LRC
16+
SOT-23
15000
进口原装现货/价格优势!
原装三菱
23+
SOT-23
5000
专注配单,只做原装进口现货
CJ/长晶
2511
SOT-23
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
MITSUBISHI
1922+
SOT-23
35689
原装进口现货库存专业工厂研究所配单供货

2SC305芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

2SC305数据表相关新闻

  • 2SC2712G-SOT23.3R-Y-TG

    2SC2712G-SOT23.3R-Y-TG

    2023-1-31
  • 2SC3356

    2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.

    2021-3-23
  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14
  • 2SC3671-B,T2F(J

    产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors

    2020-11-5
  • 2SC2334中文资料

    2SC2334中文资料

    2019-2-18
  • 2SC2859中文资料

    2SC2859中文资料

    2019-2-18