Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

Transistors

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain

LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forward gain. ● Super mini packa

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Transistor

Features ● Collector current :IC=0.2A ● Power dissipation :PC=0.15W

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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