位置:首页 > IC中文资料 > 2SC3052

2SC3052晶体管资料

  • 2SC3052别名:2SC3052三极管、2SC3052晶体管、2SC3052晶体三极管

  • 2SC3052生产厂家:日本三菱公司

  • 2SC3052制作材料:Si-NPN

  • 2SC3052性质:表面帖装型 (SMD)

  • 2SC3052封装形式:贴片封装

  • 2SC3052极限工作电压:50V

  • 2SC3052最大电流允许值:0.2A

  • 2SC3052最大工作频率:200MHZ

  • 2SC3052引脚数:3

  • 2SC3052最大耗散功率:0.3W

  • 2SC3052放大倍数

  • 2SC3052图片代号:H-15

  • 2SC3052vtest:50

  • 2SC3052htest:200000000

  • 2SC3052atest:0.2

  • 2SC3052wtest:0.3

  • 2SC3052代换 2SC3052用什么型号代替:BC846,BC847,BCW71,BCW72,BCW81,2SC1623,2SC2412K,2SC2463,2SC2712,2SC2812,3DG130C,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC3052

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

2SC3052

NPN Transistor

Features ● Collector current :IC=0.2A ● Power dissipation :PC=0.15W

KEXIN

科信电子

2SC3052

NPN Silicon Plastic-Encapsulate Transistor

FEATURE • Excellent linearity of DC forward current gain. • Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)

SECOS

喜可士

2SC3052

Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

BILIN

银河微电

2SC3052

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SC3052

丝印代码:LE/LF/LG;Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

LUGUANG

鲁光电子

2SC3052

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3052

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain

HTSEMI

金誉半导体

2SC3052

LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max(@Ic=100mA,IB=10mA) ● Excellent linearity of DC forward gain. ● Super mini packa

ISAHAYA

谏早电子

2SC3052

NPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Power Dissipation of 150mW • Low collector to emitter saturation voltage • Excellent linearity of DC forward current gain MECHANICAL DATA • Case:SOT-23(TO-236) • Terminals:Plated solderable per MIL-STD-750,method 2026 • Mounting Positi

JINGHENG

晶恒

2SC3052

Plastic-Encapsulate Transistors

FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

GWSEMI

唯圣电子

2SC3052

50V,0.2A,General Purpose NPN Bipolar Transistor

GALAXY

银河微电

2SC3052

晶体三极管

ZOCA

卓凯半导体

2SC3052

NPN小信号三极管

CHINABASE

创基电子

2SC3052

NPN Plastic-Encapsulate Transistor

文件:643.52 Kbytes Page:3 Pages

SECOS

喜可士

2SC3052

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件:298.22 Kbytes Page:2 Pages

RECTRON

丽正

2SC3052

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件:189.54 Kbytes Page:4 Pages

ISAHAYA

谏早电子

丝印代码:LE;Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu

MCC

丝印代码:LF;Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu

MCC

丝印代码:LG;Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu

MCC

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件:189.54 Kbytes Page:4 Pages

ISAHAYA

谏早电子

NPN Plastic-Encapsulate Transistor

文件:643.52 Kbytes Page:3 Pages

SECOS

喜可士

NPN Plastic-Encapsulate Transistor

文件:643.52 Kbytes Page:3 Pages

SECOS

喜可士

TRANSISTOR (NPN)

文件:129.22 Kbytes Page:1 Pages

WINNERJOIN

永而佳

2SC3052产品属性

  • 类型

    描述

  • PCM(W):

    0.15

  • IC(A):

    0.2

  • VCBO(V):

    50

  • VCEO(V):

    50

  • VEBO(V):

    6

  • hFEMin:

    150

  • hFEMax:

    800

  • hFE@VCE(V):

    6

  • hFE@IC(A):

    0.001

  • VCE(sat)(V):

    0.3

  • VCE(sat)\u001E@IC(A):

    0.1

  • VCE(sat)\u001E@IB(A):

    0.01

  • Package:

    SOT-23

更新时间:2026-5-15 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI/三菱
21+
SOT23
120000
长期代理优势供应
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
长电
25+23+
SOT-23
23861
绝对原装正品全新进口深圳现货
LRC
16+
SOT-23
15000
进口原装现货/价格优势!
MITSUBISHI三菱/ISAHAYA菱
24+
SOT-23
15200
新进库存/原装
25+
SOT23(Pb free)
1526
全新原装!优势库存热卖中!
MITSUBIS
22+
SOT-23
20000
只做原装
CJ
22+
SOT23
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
长电
25+
SOT-23
9000
只做原装正品 有挂有货 假一赔十
CJ
09+
SOT-23
1829
全新 发货1-2天

2SC3052数据表相关新闻

  • 2SC2712G-SOT23.3R-Y-TG

    2SC2712G-SOT23.3R-Y-TG

    2023-1-31
  • 2SC3356

    2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-3-23
  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14
  • 2SC3671-B,T2F(J

    产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors

    2020-11-5
  • 2SC2334中文资料

    2SC2334中文资料

    2019-2-18
  • 2SC2859中文资料

    2SC2859中文资料

    2019-2-18