2SC3052晶体管资料

  • 2SC3052别名:2SC3052三极管、2SC3052晶体管、2SC3052晶体三极管

  • 2SC3052生产厂家:日本三菱公司

  • 2SC3052制作材料:Si-NPN

  • 2SC3052性质:表面帖装型 (SMD)

  • 2SC3052封装形式:贴片封装

  • 2SC3052极限工作电压:50V

  • 2SC3052最大电流允许值:0.2A

  • 2SC3052最大工作频率:200MHZ

  • 2SC3052引脚数:3

  • 2SC3052最大耗散功率:0.3W

  • 2SC3052放大倍数

  • 2SC3052图片代号:H-15

  • 2SC3052vtest:50

  • 2SC3052htest:200000000

  • 2SC3052atest:0.2

  • 2SC3052wtest:0.3

  • 2SC3052代换 2SC3052用什么型号代替:BC846,BC847,BCW71,BCW72,BCW81,2SC1623,2SC2412K,2SC2463,2SC2712,2SC2812,3DG130C,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC3052

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC3052

NPNTransistor

Features ●Collectorcurrent:IC=0.2A ●Powerdissipation:PC=0.15W

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3052

NPNSiliconPlastic-EncapsulateTransistor

FEATURE •ExcellentlinearityofDCforwardcurrentgain. •LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax.(@IC=100mA,IB=10mA)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC3052

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SC3052

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:0.15W(Tamb=25℃) CollectorcurrentICM:0.2A Collector-basevoltageV(BR)CBO:50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN
2SC3052

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SC3052

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC3052

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC3052

TRANSISTOR(NPN)

FEATURES ●LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) ●ExcellentlinearityofDCforwardcurrentgain

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SC3052

LOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION 2SC3052isaminipackageresinsealedsiliconNPNepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=0.3Vmax(@Ic=100mA,IB=10mA) ●ExcellentlinearityofDCforwardgain. ●Superminipacka

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA
2SC3052

NPNPlastic-EncapsulateTransistors

FEATURES •EpoxymeetsUL-94V-0flammabilityrating •PowerDissipationof150mW •Lowcollectortoemittersaturationvoltage •ExcellentlinearityofDCforwardcurrentgain MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPositi

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
2SC3052

Plastic-EncapsulateTransistors

FEATURES Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) ExcellentlinearityofDCforwardcurrentgain

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI
2SC3052

NPNPlastic-EncapsulateTransistor

文件:643.52 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC3052

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)

文件:298.22 Kbytes Page:2 Pages

RECTRON

Rectron Semiconductor

RECTRON
2SC3052

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

文件:189.54 Kbytes Page:4 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

ExcellentlinearityofDCforwardcurrentgain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

文件:189.54 Kbytes Page:4 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

NPNPlastic-EncapsulateTransistor

文件:643.52 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNPlastic-EncapsulateTransistor

文件:643.52 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

TRANSISTOR(NPN)

文件:129.22 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

2SC3052产品属性

  • 类型

    描述

  • 型号

    2SC3052

  • 制造商

    NA

更新时间:2025-7-23 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三菱
15+
SOT-23
6698
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
原装三菱
23+
SOT-23
5000
专注配单,只做原装进口现货
CJ/长晶
2511
SOT-23
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
长电
21+
SOT-23
36000
原装现货假一赔十
长电
24+
SOT-23
9000
只做原装正品 有挂有货 假一赔十
MITSUBISHI/三菱
23+
SOT-23
4000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
原装三菱
23+
SOT-23
5000
专注配单,只做原装进口现货
MITSUBISHI
1922+
SOT-23
35689
原装进口现货库存专业工厂研究所配单供货

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