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2SC3052晶体管资料
2SC3052别名：2SC3052三极管、2SC3052晶体管、2SC3052晶体三极管
2SC3052生产厂家：日本三菱公司
2SC3052制作材料：Si-NPN
2SC3052性质：表面帖装型 （SMD）
2SC3052封装形式：贴片封装
2SC3052极限工作电压：50V
2SC3052最大电流允许值：0.2A
2SC3052最大工作频率：200MHZ
2SC3052引脚数：3
2SC3052最大耗散功率：0.3W
2SC3052放大倍数：
2SC3052图片代号：H-15
2SC3052vtest：50
2SC3052htest：200000000
- 2SC3052atest：0.2
2SC3052wtest：0.3
2SC3052代换 2SC3052用什么型号代替：BC846,BC847,BCW71,BCW72,BCW81,2SC1623,2SC2412K,2SC2463,2SC2712,2SC2812,3DG130C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3052 | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 |   | |
2SC3052 | NPN Transistor Features ● Collector current :IC=0.2A ● Power dissipation :PC=0.15W | KEXIN 科信电子 | | |
2SC3052 | NPN Silicon Plastic-Encapsulate Transistor FEATURE • Excellent linearity of DC forward current gain. • Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) | SECOS 喜可士 | | |
2SC3052 | Silicon Epitaxial Planar Transistor FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application. | BILIN 银河微电 | | |
2SC3052 | TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SC3052 | Silicon Epitaxial Planar Transistor FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application. | LUGUANG 鲁光电子 | | |
2SC3052 | Excellent linearity of DC forward current gain FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
2SC3052 | TRANSISTOR (NPN) FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain | HTSEMI 金誉半导体 | | |
2SC3052 | LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forward gain. ● Super mini packa | ISAHAYA 谏早电子 | | |
2SC3052 | NPN Plastic-Encapsulate Transistors FEATURES • Epoxy meets UL-94 V-0 flammability rating • Power Dissipation of 150mW • Low collector to emitter saturation voltage • Excellent linearity of DC forward current gain MECHANICAL DATA • Case:SOT-23(TO-236) • Terminals:Plated solderable per MIL-STD-750,method 2026 • Mounting Positi | JINGHENG 晶恒 | | |
2SC3052 | Plastic-Encapsulate Transistors FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain | GWSEMI 唯圣电子 | | |
2SC3052 | 通用三极管 | ETC 知名厂家 | ETC | |
2SC3052 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) | RECTRON 丽正国际 | | |
2SC3052 | 晶体管（PNP、NPN） | ETC 知名厂家 | ETC | |
2SC3052 | NPN Plastic-Encapsulate Transistor 文件：643.52 Kbytes Page：3 Pages | SECOS 喜可士 | | |
2SC3052 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件：298.22 Kbytes Page：2 Pages | RECTRON 丽正国际 | | |
2SC3052 | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：189.54 Kbytes Page：4 Pages | ISAHAYA 谏早电子 | | |
Excellent linearity of DC forward current gain FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu | MCC | | ||
Excellent linearity of DC forward current gain FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu | MCC | | ||
Excellent linearity of DC forward current gain FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) • Excellent linearity of DC forward cu | MCC | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：189.54 Kbytes Page：4 Pages | ISAHAYA 谏早电子 | | ||
NPN Plastic-Encapsulate Transistor 文件：643.52 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulate Transistor 文件：643.52 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
TRANSISTOR (NPN) 文件：129.22 Kbytes Page：1 Pages | WINNERJOIN 永而佳 | |
2SC3052产品属性
- 类型
描述
- 型号
2SC3052
- 制造商
NA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUMI |
2016+ |
SOT23-3 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MITSUBIS |
01+ |
SOT23 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MITSUBISHI/三菱 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ISAHAYA |
24+ |
NA/ |
24250 |
原装现货,当天可交货,原型号开票 |
|||
ISAHAYA |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
PANASONIC |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ISAHAYA |
25+ |
SOT3 |
32000 |
ISAHAYA全新特价2SC3052-T112-1E即刻询购立享优惠#长期有货 |
|||
N/A |
24+/25+ |
3000 |
原装正品现货库存价优 |
||||
ISAHAYA |
23+ |
SOT23 |
50000 |
只做原装正品 |
|||
ISAHAYA |
23+ |
NA |
57486 |
专做原装正品,假一罚百! |
2SC3052规格书下载地址
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2SC3052数据表相关新闻
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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2019-2-18
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