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2SC271晶体管资料
2SC271别名:2SC271三极管、2SC271晶体管、2SC271晶体三极管
2SC271生产厂家:日本日电公司
2SC271制作材料:Si-NPN
2SC271性质:超高频/特高频 (UHF)
2SC271封装形式:贴片封装
2SC271极限工作电压:
2SC271最大电流允许值:
2SC271最大工作频率:1.1GHZ
2SC271引脚数:3
2SC271最大耗散功率:
2SC271放大倍数:
2SC271图片代号:G-22
2SC271vtest:0
2SC271htest:1100000000
- 2SC271atest:0
2SC271wtest:0
2SC271代换 2SC271用什么型号代替:BF180,BF362,BF363,BF357,BF377,3DG112B,
2SC271价格
参考价格:¥0.1383
型号:2SC2712-GR,LF 品牌:Toshiba 备注:这里有2SC271多少钱,2025年最近7天走势,今日出价,今日竞价,2SC271批发/采购报价,2SC271行情走势销售排行榜,2SC271报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
TRANSISTOR(FORAUDIOAMPLIFIERAPPLICATIONS) ForAudioAmplifierApplications •HighDCcurrentgain:hFE(1)=100~320 •Complementaryto2SA1150 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForAudioAmplifierApplications •HighDCcurrentgain:hFE(1)=100~320 •Complementaryto2SA1150 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForAudioAmplifierApplications •HighDCcurrentgain:hFE(1)=100~320 •Complementaryto2SA1150 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURE •LowNoise:NF=1dB(Typ),10dB(MAX) •Complementaryto2SA1162 •AudioFrequencyGeneralPurposeAmplifierApplications | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●AudioFrequencyGeneralPurposeAmplifierApplications ●LowNoise:NF=1dB(Typ),10dB(MAX) ●Complementaryto2SA1162 | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | |||
Plastic-EncapsulateTransistors FEATURES LowNoise:NF=1dB(Typ),10dB(MAX) Complementaryto2SA1162 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR PRF-AMPLIFIER,LOWLEVEL&LOWNOISE ●Complemento2SA1037 ●Collector-current:Ic=100mA ●Collector-EmillerVoltage:VCE=45V ●HighTotalpowerDissipationPc=225mW ●HighlifeAndGoodLinearity | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •WithSOT-23packaging •Highcollector-basevoltage •Highpowerdissipation •Lowsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA) =0.95(typ.) •HighhFE:hFE=70~700 •Lownoise:NF=1dB(typ.),1 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNTransistors SiliconNPNTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoise:NF=1dB(Typ.),10dB(Max). ●Complementaryto2SA1162. ●Highvoltageandhighcurrent. ●HighhFElinearity. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SiliconNPNEpitaxialTypeTransistor Features ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) ●HighhFE:hFE=70700 ●Lownoise:NF=1dB(typ.),10dB(max) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
TRANSISTOR(NPN) FEATURE •LowNoise:NF=1dB(Typ),10dB(MAX) •Complementaryto2SA1162 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
NPNSiliconGeneralPurposeTransistor FEATURE •LowNoise:NF=1dB(Typ.),10db(Max.) •Complementsofthe2SA1162 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors FEATURE ·LowNoise:NF=1dB(Typ),10dB(MAX) ·Complementaryto2SA1162 ·AudioFrequencyGeneralPurposeAmplifierApplications | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
LowNoise,Complementaryto2SA1162 FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
LowNoise,Complementaryto2SA1162 FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
SiliconNPNTransistors SiliconNPNTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
NPNPlastic-EncapsulateTransistors Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNTransistors SiliconNPNTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
LowNoise,Complementaryto2SA1162 FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNPlastic-EncapsulateTransistors Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA) =0.95(typ.) •HighhFE:hFE=70~700 •Lownoise:NF=1dB(typ.),1 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
MediumFrequencyNPNAmplifierTransistor50V,200mA,80MHz The2SC2712GT1Gisdesignedforlowtomediumfrequencyapplicationssuchaswirelesstoys.ThetargeteddesignenablesimprovedperformanceversustheindustrystandardMMBT3904*insomekeyparametricspecifications. Features •LowerVCE(sat)* •HigherGain(hfe)* •HigherBreakdow | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
LowNoise,Complementaryto2SA1162 FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNPlastic-EncapsulateTransistors Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNTransistors SiliconNPNTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNTransistors SiliconNPNTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
LowNoise,Complementaryto2SA1162 FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNPlastic-EncapsulateTransistors Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType Features ●HighvoltageVCEO=120V ●HighhFE ●Lownoise. ●Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SOT-23Plastic-EncapsulateTransistors FEATURES SmallreverseTransferCapacitance:Cre=0.7pF(typ.) LowNoiseFigure:NF=2.5dB(typ.)(f=100MHz) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●SmallreverseTransferCapacitance:Cre=0.7pF(typ.) ●LowNoiseFigure:NF=2.5dB(typ.)(f=100MHz) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) FEATURES AM/FMAmplifier,LocalOscillatorofFM/VHFTuner HighCurrentGainBandwidthProductfT=550MHz(Typ) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Smallreversetransfercapacitance,lownoisefigure. Applications Highfrequencyamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●Smallreversetransfercapacitance: Cre=0.7pF(Typ.) ●LownoiseFigure:NF=2.5dB(Typ.) f=100MHz APPLICATIONS ●Highfrequencyamplifierapplications ●FM,RF,MIX,IFAmplifierapplications | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
NPNTransistors ■Features ●CollectorCurrentCapabilityIC=20mA ●CollectorEmitterVoltageVCEO=30V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
HighFrequencyAmplifierApplicationsFM,RF,MIX,IFAmplifierApplications HighFrequencyAmplifierApplications FM,RF,MIX,IFAmplifierApplications •Smallreversetransfercapacitance:Cre=0.7pF(typ.) •Lownoisefigure:NF=2.5dB(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TRANSISTOR(HIGHFREQUENCY,FM,RF,MIX,IFAMPLIFIERAPPLICATIONS HighFrequencyAmplifierApplications FM,RF,MIX,IFAmplifierApplications •Smallreversetransfercapacitance:Cre=0.7pF(typ.) •Lownoisefigure:NF=2.5dB(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●Smallreversetransfercapacitance:Cre=0.7pF(Typ.) ●LownoiseFigure:NF=2.5dB(Typ.)f=100MHz APPLICATIONS ●Highfrequencyamplifierapplications ●FM,RF,MIX,IFAmplifierapplications | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
TRANSISTOR(NPN) FEATURES ●SmallreverseTransferCapacitance:Cre=0.7pF(typ.) ●LowNoiseFigure:NF=2.5dB(typ.)(f=100MHz) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
NPNGeneralPurposeTransistors NPNGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology |
2SC271产品属性
- 类型
描述
- 型号
2SC271
- 制造商
Toshiba America Electronic Components
- 功能描述
Trans GP BJT NPN 30V 0.8A 3-Pin Mini
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
394 |
现货供应 |
||||
TOSHIBA |
23+ |
SOT |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA |
23+ |
SOT-23 |
63000 |
原装正品现货 |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TOSHIBA |
20+ |
SOT |
15000 |
只做原装正品假一赔十!正规渠道订货! |
|||
CJ |
21+ |
SOT-23 |
10 |
原装现货17377264928微信同号 |
|||
TOSHIBA |
23+ |
SOT-23 |
75000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
24+ |
SOT23 |
1733 |
只做原厂渠道 可追溯货源 |
|||
原装 |
24+ |
标准 |
52588 |
热卖原装进口 |
|||
TOSHIBA/东芝 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
2SC271规格书下载地址
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- 2SC2660
- 2SC2659
- 2SC2658
- 2SC2657
2SC271数据表相关新闻
2SB857L-TO252R-D-TG_UTC代理商
2SB857L-TO252R-D-TG_UTC代理商
2023-3-22SC1815L-TO92K-Y-TG_UTC代理商
2SC1815L-TO92K-Y-TG_UTC代理商
2023-2-152SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-3-232SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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