2SC271晶体管资料

  • 2SC271别名:2SC271三极管、2SC271晶体管、2SC271晶体三极管

  • 2SC271生产厂家:日本日电公司

  • 2SC271制作材料:Si-NPN

  • 2SC271性质:超高频/特高频 (UHF)

  • 2SC271封装形式:贴片封装

  • 2SC271极限工作电压

  • 2SC271最大电流允许值

  • 2SC271最大工作频率:1.1GHZ

  • 2SC271引脚数:3

  • 2SC271最大耗散功率

  • 2SC271放大倍数

  • 2SC271图片代号:G-22

  • 2SC271vtest:0

  • 2SC271htest:1100000000

  • 2SC271atest:0

  • 2SC271wtest:0

  • 2SC271代换 2SC271用什么型号代替:BF180,BF362,BF363,BF357,BF377,3DG112B,

2SC271价格

参考价格:¥0.1383

型号:2SC2712-GR,LF 品牌:Toshiba 备注:这里有2SC271多少钱,2025年最近7天走势,今日出价,今日竞价,2SC271批发/采购报价,2SC271行情走势销售排行榜,2SC271报价。
型号 功能描述 生产厂家&企业 LOGO 操作

TRANSISTOR(FORAUDIOAMPLIFIERAPPLICATIONS)

ForAudioAmplifierApplications •HighDCcurrentgain:hFE(1)=100~320 •Complementaryto2SA1150

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForAudioAmplifierApplications •HighDCcurrentgain:hFE(1)=100~320 •Complementaryto2SA1150

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

MINIPACKAGESERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForAudioAmplifierApplications •HighDCcurrentgain:hFE(1)=100~320 •Complementaryto2SA1150

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURE •LowNoise:NF=1dB(Typ),10dB(MAX) •Complementaryto2SA1162 •AudioFrequencyGeneralPurposeAmplifierApplications

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●AudioFrequencyGeneralPurposeAmplifierApplications ●LowNoise:NF=1dB(Typ),10dB(MAX) ●Complementaryto2SA1162

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

Plastic-EncapsulateTransistors

FEATURES LowNoise:NF=1dB(Typ),10dB(MAX) Complementaryto2SA1162

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH

NPNEPITAXIALSILICONTRANSISTOR

PRF-AMPLIFIER,LOWLEVEL&LOWNOISE ●Complemento2SA1037 ●Collector-current:Ic=100mA ●Collector-EmillerVoltage:VCE=45V ●HighTotalpowerDissipationPc=225mW ●HighlifeAndGoodLinearity

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

iscSiliconNPNPowerTransistor

DESCRIPTION •WithSOT-23packaging •Highcollector-basevoltage •Highpowerdissipation •Lowsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA) =0.95(typ.) •HighhFE:hFE=70~700 •Lownoise:NF=1dB(typ.),1

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTransistors

SiliconNPNTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoise:NF=1dB(Typ.),10dB(Max). ●Complementaryto2SA1162. ●Highvoltageandhighcurrent. ●HighhFElinearity. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SiliconNPNEpitaxialTypeTransistor

Features ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) ●HighhFE:hFE=70700 ●Lownoise:NF=1dB(typ.),10dB(max)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

TRANSISTOR(NPN)

FEATURE •LowNoise:NF=1dB(Typ),10dB(MAX) •Complementaryto2SA1162

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

NPNSiliconGeneralPurposeTransistor

FEATURE •LowNoise:NF=1dB(Typ.),10db(Max.) •Complementsofthe2SA1162

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SOT-23Plastic-EncapsulateTransistors

FEATURE ·LowNoise:NF=1dB(Typ),10dB(MAX) ·Complementaryto2SA1162 ·AudioFrequencyGeneralPurposeAmplifierApplications

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

LowNoise,Complementaryto2SA1162

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

LowNoise,Complementaryto2SA1162

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

SiliconNPNTransistors

SiliconNPNTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

NPNPlastic-EncapsulateTransistors

Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNTransistors

SiliconNPNTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

LowNoise,Complementaryto2SA1162

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNPlastic-EncapsulateTransistors

Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA) =0.95(typ.) •HighhFE:hFE=70~700 •Lownoise:NF=1dB(typ.),1

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

MediumFrequencyNPNAmplifierTransistor50V,200mA,80MHz

The2SC2712GT1Gisdesignedforlowtomediumfrequencyapplicationssuchaswirelesstoys.ThetargeteddesignenablesimprovedperformanceversustheindustrystandardMMBT3904*insomekeyparametricspecifications. Features •LowerVCE(sat)* •HigherGain(hfe)* •HigherBreakdow

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LowNoise,Complementaryto2SA1162

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNPlastic-EncapsulateTransistors

Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNTransistors

SiliconNPNTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNTransistors

SiliconNPNTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

LowNoise,Complementaryto2SA1162

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max). Complementaryto2SA1162. Highvoltageandhighcurrent. HighhFElinearity. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNPlastic-EncapsulateTransistors

Features •Complementaryto2SA1162 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR

AUDIOFREQUENCYAMPLIFIERNPNTRANSISTOR FEATURES *HighVoltageandHighCurrent:VCEO=50V,IC=150mA(Max.) *ExcellenthFELinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *HighhFE *LowNoise

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType

Features ●HighvoltageVCEO=120V ●HighhFE ●Lownoise. ●Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SA1163 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SOT-23Plastic-EncapsulateTransistors

FEATURES SmallreverseTransferCapacitance:Cre=0.7pF(typ.) LowNoiseFigure:NF=2.5dB(typ.)(f=100MHz)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SmallreverseTransferCapacitance:Cre=0.7pF(typ.) ●LowNoiseFigure:NF=2.5dB(typ.)(f=100MHz)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURES AM/FMAmplifier,LocalOscillatorofFM/VHFTuner HighCurrentGainBandwidthProductfT=550MHz(Typ)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Smallreversetransfercapacitance,lownoisefigure. Applications Highfrequencyamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconEpitaxialPlanarTransistor

FEATURES ●Smallreversetransfercapacitance: Cre=0.7pF(Typ.) ●LownoiseFigure:NF=2.5dB(Typ.) f=100MHz APPLICATIONS ●Highfrequencyamplifierapplications ●FM,RF,MIX,IFAmplifierapplications

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

NPNTransistors

■Features ●CollectorCurrentCapabilityIC=20mA ●CollectorEmitterVoltageVCEO=30V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

HighFrequencyAmplifierApplicationsFM,RF,MIX,IFAmplifierApplications

HighFrequencyAmplifierApplications FM,RF,MIX,IFAmplifierApplications •Smallreversetransfercapacitance:Cre=0.7pF(typ.) •Lownoisefigure:NF=2.5dB(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTOR(HIGHFREQUENCY,FM,RF,MIX,IFAMPLIFIERAPPLICATIONS

HighFrequencyAmplifierApplications FM,RF,MIX,IFAmplifierApplications •Smallreversetransfercapacitance:Cre=0.7pF(typ.) •Lownoisefigure:NF=2.5dB(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconEpitaxialPlanarTransistor

FEATURES ●Smallreversetransfercapacitance:Cre=0.7pF(Typ.) ●LownoiseFigure:NF=2.5dB(Typ.)f=100MHz APPLICATIONS ●Highfrequencyamplifierapplications ●FM,RF,MIX,IFAmplifierapplications

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

TRANSISTOR(NPN)

FEATURES ●SmallreverseTransferCapacitance:Cre=0.7pF(typ.) ●LowNoiseFigure:NF=2.5dB(typ.)(f=100MHz)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

2SC271产品属性

  • 类型

    描述

  • 型号

    2SC271

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    Trans GP BJT NPN 30V 0.8A 3-Pin Mini

更新时间:2025-7-5 13:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
394
现货供应
TOSHIBA
23+
SOT
50000
全新原装正品现货,支持订货
TOSHIBA
23+
SOT-23
63000
原装正品现货
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA
20+
SOT
15000
只做原装正品假一赔十!正规渠道订货!
CJ
21+
SOT-23
10
原装现货17377264928微信同号
TOSHIBA
23+
SOT-23
75000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA/东芝
24+
SOT23
1733
只做原厂渠道 可追溯货源
原装
24+
标准
52588
热卖原装进口
TOSHIBA/东芝
25+
NA
880000
明嘉莱只做原装正品现货

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