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2SC271晶体管资料

2SC271别名：2SC271三极管、2SC271晶体管、2SC271晶体三极管
2SC271生产厂家：日本日电公司
2SC271制作材料：Si-NPN
2SC271性质：超高频/特高频（UHF）
2SC271封装形式：贴片封装
2SC271极限工作电压：
2SC271最大电流允许值：
2SC271最大工作频率：1.1GHZ
2SC271引脚数：3
2SC271最大耗散功率：
2SC271放大倍数：
2SC271图片代号：G-22
2SC271vtest：0
2SC271htest：1100000000
2SC271atest：0
2SC271wtest：0

2SC271代换 2SC271用什么型号代替：BF180,BF362,BF363,BF357,BF377,3DG112B,

2SC271价格

参考价格：￥0.1383

型号：2SC2712-GR,LF 品牌：Toshiba 备注：这里有2SC271多少钱，2025年最近7天走势，今日出价，今日竞价，2SC271批发/采购报价，2SC271行情走势销售排行榜，2SC271报价。

型号	功能描述	生产厂家企业	LOGO
2SC2710	TRANSISTOR (FOR AUDIO AMPLIFIER APPLICATIONS) For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150	TOSHIBA 东芝	TOSHIBA
2SC2710	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150	TOSHIBA 东芝	TOSHIBA
2SC2710	MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge	TOSHIBA 东芝	TOSHIBA
2SC2710-Y	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150	TOSHIBA 东芝	TOSHIBA
2SC2712	isc Silicon NPN Power Transistor DESCRIPTION • With SOT-23 packaging • High collector-base voltage • High power dissipation • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications	ISC 无锡固电	ISC
2SC2712	NPN Silicon General Purpose Transistor FEATURE • Low Noise: NF=1dB(Typ.), 10db(Max.) • Complements of the 2SA1162	SECOS 喜可士	SECOS
2SC2712	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) • Complementary to 2SA1162 • Audio Frequency General Purpose Amplifier Applications	JIANGSU 长电科技	JIANGSU
2SC2712	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR ( NPN ) Features ● Audio Frequency General Purpose Amplifier Applications ● Low Noise: NF=1 dB (Typ),10dB(MAX) ● Complementary to 2SA1162	HDSEMI 海德半导体	HDSEMI
2SC2712	Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162	HOTTECH 合科泰	HOTTECH
2SC2712	NPN EPITAXIAL SILICON TRANSISTOR PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity	WINNERJOIN 永而佳	WINNERJOIN
2SC2712	Low Noise, Complementary to 2SA1162 FEATURES Low noise： NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC2712	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 1	TOSHIBA 东芝	TOSHIBA
2SC2712	Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SC2712	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712	TRANSISTOR(NPN) FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) • Complementary to 2SA1162	HTSEMI 金誉半导体	HTSEMI
2SC2712	Silicon Epitaxial Planar Transistor FEATURES ● Low noise： NF=1dB (Typ.),10 dB(Max). ● Complementary to 2SA1162. ● High voltage and high current. ● High hFE linearity. APPLICATIONS ● Audio frequency general purpose amplifier applications.	BILIN 银河微电	BILIN
2SC2712	Silicon NPN Epitaxial Type Transistor Features ● High voltage and high current: VCEO = 50 V, IC = 150 mA (max) ● Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) ● High hFE: hFE = 70 700 ● Low noise: NF = 1dB (typ.), 10dB (max)	KEXIN 科信电子	KEXIN
2SC2712	SOT-23 Plastic-Encapsulate Transistors FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 · Audio Frequency General Pu rpose Amplifier Applications	UMW 友台半导体	UMW
2SC2712BL	Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SC2712BL	Low Noise, Complementary to 2SA1162 FEATURES Low noise： NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC2712-BL	NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SC2712-G-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712GR	Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SC2712GR	Low Noise, Complementary to 2SA1162 FEATURES Low noise： NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC2712-GR	NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SC2712GRTE85L	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 1	TOSHIBA 东芝	TOSHIBA
2SC2712GT1G	Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications. Features • Lower VCE(sat)* • Higher Gain (hfe)* • Higher Breakdow	ONSEMI 安森美半导体	ONSEMI
2SC2712-L-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712L-G-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712L-L-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712L-O-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712L-X-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712L-Y-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712O	Low Noise, Complementary to 2SA1162 FEATURES Low noise： NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC2712-O	NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SC2712-O-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712Q	Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SC2712-X-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2712Y	Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SC2712Y	Low Noise, Complementary to 2SA1162 FEATURES Low noise： NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC2712-Y	NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SC2712-Y-AE3-R	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise	UTC 友顺	UTC
2SC2713	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package	TOSHIBA 东芝	TOSHIBA
2SC2713	Silicon NPN Epitaxial Type Features ● High voltage VCEO=120V ● High hFE ● Low noise. ● Small package.	KEXIN 科信电子	KEXIN
2SC2713	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package	TOSHIBA 东芝	TOSHIBA
2SC2713	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package	TOSHIBA 东芝	TOSHIBA
2SC2713-BL	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package	TOSHIBA 东芝	TOSHIBA
2SC2713-GR	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package	TOSHIBA 东芝	TOSHIBA
2SC2714	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Small reverse Transfer Capacitance:Cre=0.7pF(typ.) ● Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)	JIANGSU 长电科技	JIANGSU
2SC2714	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Small reverse transfer capacitance, low noise figure. Applications High frequency amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SC2714	SOT-23 Plastic-Encapsulate Transistors FEATURES Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)	DGNJDZ 南晶电子	DGNJDZ
2SC2714	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC2714	Silicon Epitaxial Planar Transistor FEATURES ● Small reverse transfer capacitance: Cre=0.7pF(Typ.) ● Low noise Figure:NF=2.5dB(Typ.) f=100MHz APPLICATIONS ● High frequency amplifier applications ● FM,RF,MIX,IF Amplifier applications	LUGUANG 鲁光电子	LUGUANG
2SC2714	TRANSISTOR (NPN) FEATURES AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=550 MHz (Typ)	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC2714	High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
2SC2714	NPN Transistors ■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V	YFWDIODE 佑风微	YFWDIODE
2SC2714	Silicon NPN Epitaxial ■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V	KEXIN 科信电子	KEXIN
2SC2714	TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
2SC2714	Silicon Epitaxial Planar Transistor FEATURES ● Small reverse transfer capacitance: Cre=0.7pF(Typ.) ● Low noise Figure:NF=2.5dB(Typ.) f=100MHz APPLICATIONS ● High frequency amplifier applications ● FM,RF,MIX,IF Amplifier applications	BILIN 银河微电	BILIN
2SC2714	TRANSISTOR(NPN) FEATURES ● Small reverse Transfer Capacitance:Cre=0.7pF(typ.) ● Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)	HTSEMI 金誉半导体	HTSEMI

2SC271产品属性

类型
描述
型号
2SC271
制造商
Toshiba America Electronic Components
功能描述
Trans GP BJT NPN 30V 0.8A 3-Pin Mini

2SC271供应商更多...

更新时间：2025-12-24 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SC2712	TOSHIBA/东芝	23+	SOT-23	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
中天科工半导体（深圳）有限公司	2SC2712-Y	TOSHIBA/东芝	25+	SOT23	32000	TOSHIBA/东芝全新特价2SC2712-Y即刻询购立享优惠#长期有货	询价
深圳市恒达亿科技有限公司	2SC2712-GR(TE85L.F)	TOSHIBA	25+	SOT23-3	6000	全新原装现货、诚信经营!	询价
深圳市赛特兴科技有限公司	2SC2712-GR(TE85LF)	TOSHIBA	23+	SOT23	980000	正规渠道,只有原装!	询价
深圳市讯顺达科技有限公司	2SC2712G-G-AE3-R	UTC(友顺)	24+/25+	SOT-23	3000	UTC原厂一级代理商,价格优势!	询价
标准国际(香港)有限公司	2SC2712-GR(T5LSOYF)	TOSHIBA	25+	LEAD FREE	458	全新原装!优势库存热卖中!	询价
深圳市得捷芯城科技有限公司	2SC2712-Y	TOSHIBA(东芝)	24+	N/A	7548	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市美思瑞电子科技有限公司	2SC2712	UMW 友台	23+	SOT-23-3	44000	原装正品，实单请联系	询价
深圳市壹芯创科技有限公司	2SC2712Y/GR/BL	TOSHIBA	24+		10000	公司只做原装正品!现货库存!假一罚十!	询价
深圳市金华微盛电子有限公司	2SC2712-GR	TOSHIBA/东芝	2019+	SOT-23	6700	原厂渠道可含税出货	询价

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2SC271晶体管资料

2SC271价格

2SC271产品属性

2SC271供应商更多...

2SC271芯片相关品牌

2SC271规格书下载地址

2SC271参数引脚图相关

2SC271数据表相关新闻

2SB857L-TO252R-D-TG_UTC代理商

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