2SC27晶体管资料
2SC27别名:2SC27三极管、2SC27晶体管、2SC27晶体三极管
2SC27生产厂家:日本富士通公司
2SC27制作材料:Si-NPN
2SC27性质:射频/高频放大 (HF)
2SC27封装形式:直插封装
2SC27极限工作电压:60V
2SC27最大电流允许值:0.1A
2SC27最大工作频率:350MHZ
2SC27引脚数:3
2SC27最大耗散功率:0.65W
2SC27放大倍数:
2SC27图片代号:C-40
2SC27vtest:60
2SC27htest:350000000
- 2SC27atest:0.1
2SC27wtest:0.65
2SC27代换 2SC27用什么型号代替:BFV90,BFW16,BFW17,BFW66,BFX17,BFX55,BFX96,BFX97,2N3725,3SC1385,3DG120D,
2SC27价格
参考价格:¥0.1383
型号:2SC2712-GR,LF 品牌:Toshiba 备注:这里有2SC27多少钱,2025年最近7天走势,今日出价,今日竞价,2SC27批发/采购报价,2SC27行情走势销售排行榜,2SC27报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) Audio Power Amplifier Applications • High DC current gain: hFE = 100 to 320 | TOSHIBA 东芝 | |||
Silicon NPN Epitaxial Type (PCT Process) Audio Power Amplifier Applications • High DC current gain: hFE = 100 to 320 | TOSHIBA 东芝 | |||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High DC Current Gain: hFE=100-320 | JIANGSU 长电科技 | |||
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
Silicon NPN transistor in a TO-92LM Plastic Package Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High DC current gain: hFE=100~320. Applications Audio frequency power amplifier applications. | FOSHAN 蓝箭电子 | |||
Silicon NPN Epitaxial Type (PCT Process) Audio Power Amplifier Applications • High DC current gain: hFE = 100 to 320 | TOSHIBA 东芝 | |||
AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES: Complementary to 2SA1144. Small Collector Output Capacitance: Cob=1.8pF (Typ.) High Transition Frequency: f=200MHz (Typ.) | TOSHIBA 东芝 | |||
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) Audio Frequency Amplifier Applications • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. | TOSHIBA 东芝 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·Current-Gain sustaining Voltage :VCEO = 150(min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications | ISC 无锡固电 | |||
Silicon NPN transistor in a TO-92LM Plastic Package Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High transition frequency, small collector output capacitance complementary pair with 2SA1145. Applications Audio frequency amplifier applications. | FOSHAN 蓝箭电子 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) • High Power Dissipation • Complement to Type 2SA1147 APPLICATIONS • Designed for power switching amplifier and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) • High Power Dissipation • Complement to Type 2SA1147 APPLICATIONS • Designed for power switching amplifier and general purpose applications. | ISC 无锡固电 | |||
TRANSISTOR (FOR AUDIO AMPLIFIER APPLICATIONS) For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 | TOSHIBA 东芝 | |||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 | TOSHIBA 东芝 | |||
MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge | TOSHIBA 东芝 | |||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 | TOSHIBA 东芝 | |||
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 1 | TOSHIBA 东芝 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
Silicon Epitaxial Planar Transistor FEATURES ● Low noise: NF=1dB (Typ.),10 dB(Max). ● Complementary to 2SA1162. ● High voltage and high current. ● High hFE linearity. APPLICATIONS ● Audio frequency general purpose amplifier applications. | BILIN 银河微电 | |||
TRANSISTOR(NPN) FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) • Complementary to 2SA1162 | HTSEMI 金誉半导体 | |||
isc Silicon NPN Power Transistor DESCRIPTION • With SOT-23 packaging • High collector-base voltage • High power dissipation • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications | ISC 无锡固电 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) • Complementary to 2SA1162 • Audio Frequency General Purpose Amplifier Applications | JIANGSU 长电科技 | |||
Silicon NPN Epitaxial Type Transistor Features ● High voltage and high current: VCEO = 50 V, IC = 150 mA (max) ● Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) ● High hFE: hFE = 70 700 ● Low noise: NF = 1dB (typ.), 10dB (max) | KEXIN 科信电子 | |||
Low Noise, Complementary to 2SA1162 FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 | HOTTECH 合科泰 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR ( NPN ) Features ● Audio Frequency General Purpose Amplifier Applications ● Low Noise: NF=1 dB (Typ),10dB(MAX) ● Complementary to 2SA1162 | HDSEMI 海德半导体 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 · Audio Frequency General Pu rpose Amplifier Applications | UMW 友台半导体 | |||
NPN EPITAXIAL SILICON TRANSISTOR PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity | WINNERJOIN 永而佳 | |||
NPN Silicon General Purpose Transistor FEATURE • Low Noise: NF=1dB(Typ.), 10db(Max.) • Complements of the 2SA1162 | SECOS 喜可士 | |||
Low Noise, Complementary to 2SA1162 FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF | MCC | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
Low Noise, Complementary to 2SA1162 FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF | MCC | |||
Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 1 | TOSHIBA 东芝 | |||
Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications. Features • Lower VCE(sat)* • Higher Gain (hfe)* • Higher Breakdow | ONSEMI 安森美半导体 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
Low Noise, Complementary to 2SA1162 FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF | MCC | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
Silicon NPN Transistors Silicon NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
Low Noise, Complementary to 2SA1162 FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPN Plastic-Encapsulate Transistors Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF | MCC | |||
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise | UTC 友顺 | |||
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package | TOSHIBA 东芝 | |||
Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package | TOSHIBA 东芝 | |||
Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package | TOSHIBA 东芝 | |||
Silicon NPN Epitaxial Type Features ● High voltage VCEO=120V ● High hFE ● Low noise. ● Small package. | KEXIN 科信电子 |
2SC27产品属性
- 类型
描述
- 型号
2SC27
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TOSHIBA TRANSISTORTO-92MOD 30V 1A .9W ECB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
5650 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
25+ |
TO92 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
22+ |
SOT23 |
20000 |
公司只有原装 品质保证 |
|||
NEC |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
25+ |
175 |
公司现货库存 |
||||
NEC |
25+ |
TO-92S |
9800 |
全新原装现货,假一赔十 |
|||
NEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
CJ/长电 |
21+ |
TO-92S |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
NEC |
23+ |
NA |
786 |
专做原装正品,假一罚百! |
|||
NEC |
2450+ |
SOT23-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
2SC27芯片相关品牌
2SC27规格书下载地址
2SC27参数引脚图相关
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- 4921
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- 2SC2734
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- 2SC2701
- 2SC2700
- 2SC270
- 2SC2695
- 2SC2694
- 2SC2693
- 2SC2692
- 2SC2691
- 2SC2690A
- 2SC2690
- 2SC269
- 2SC268B
- 2SC268A
- 2SC2689
- 2SC2688
- 2SC2687
- 2SC2686
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- 2SC2684
- 2SC2682
- 2SC2681
- 2SC2680
- 2SC268
- 2SC2673
- 2SC2671
- 2SC2670
- 2SC2669
- 2SC2668
- 2SC2665
- 2SC2660
- 2SC2659
- 2SC2658
- 2SC2657
- 2SC2656
- 2SC2655
- 2SC2654
- 2SC2652
2SC27数据表相关新闻
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2SB857L-TO252R-D-TG_UTC代理商
2023-3-22SC1815L-TO92K-Y-TG_UTC代理商
2SC1815L-TO92K-Y-TG_UTC代理商
2023-2-152SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-232SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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