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2SC27晶体管资料

  • 2SC27别名:2SC27三极管、2SC27晶体管、2SC27晶体三极管

  • 2SC27生产厂家:日本富士通公司

  • 2SC27制作材料:Si-NPN

  • 2SC27性质:射频/高频放大 (HF)

  • 2SC27封装形式:直插封装

  • 2SC27极限工作电压:60V

  • 2SC27最大电流允许值:0.1A

  • 2SC27最大工作频率:350MHZ

  • 2SC27引脚数:3

  • 2SC27最大耗散功率:0.65W

  • 2SC27放大倍数

  • 2SC27图片代号:C-40

  • 2SC27vtest:60

  • 2SC27htest:350000000

  • 2SC27atest:0.1

  • 2SC27wtest:0.65

  • 2SC27代换 2SC27用什么型号代替:BFV90,BFW16,BFW17,BFW66,BFX17,BFX55,BFX96,BFX97,2N3725,3SC1385,3DG120D,

2SC27价格

参考价格:¥0.1383

型号:2SC2712-GR,LF 品牌:Toshiba 备注:这里有2SC27多少钱,2025年最近7天走势,今日出价,今日竞价,2SC27批发/采购报价,2SC27行情走势销售排行榜,2SC27报价。
型号 功能描述 生产厂家 企业 LOGO 操作

TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications • High DC current gain: hFE = 100 to 320

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process)

Audio Power Amplifier Applications • High DC current gain: hFE = 100 to 320

TOSHIBA

东芝

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC Current Gain: hFE=100-320

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High DC current gain: hFE=100~320. Applications Audio frequency power amplifier applications.

FOSHAN

蓝箭电子

Silicon NPN Epitaxial Type (PCT Process)

Audio Power Amplifier Applications • High DC current gain: hFE = 100 to 320

TOSHIBA

东芝

AUDIO FREQUENCY AMPLIFIER APPLICATIONS.

FEATURES: Complementary to 2SA1144. Small Collector Output Capacitance: Cob=1.8pF (Typ.) High Transition Frequency: f=200MHz (Typ.)

TOSHIBA

东芝

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Current-Gain sustaining Voltage :VCEO = 150(min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications

ISC

无锡固电

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High transition frequency, small collector output capacitance complementary pair with 2SA1145. Applications Audio frequency amplifier applications.

FOSHAN

蓝箭电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) • High Power Dissipation • Complement to Type 2SA1147 APPLICATIONS • Designed for power switching amplifier and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) • High Power Dissipation • Complement to Type 2SA1147 APPLICATIONS • Designed for power switching amplifier and general purpose applications.

ISC

无锡固电

TRANSISTOR (FOR AUDIO AMPLIFIER APPLICATIONS)

For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150

TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

For Audio Amplifier Applications • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150

TOSHIBA

东芝

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 1

TOSHIBA

东芝

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

Silicon NPN Transistors

Silicon NPN Transistors P/b Lead(Pb)-Free

WEITRON

Silicon Epitaxial Planar Transistor

FEATURES ● Low noise: NF=1dB (Typ.),10 dB(Max). ● Complementary to 2SA1162. ● High voltage and high current. ● High hFE linearity. APPLICATIONS ● Audio frequency general purpose amplifier applications.

BILIN

银河微电

TRANSISTOR(NPN)

FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) • Complementary to 2SA1162

HTSEMI

金誉半导体

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • High power dissipation • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications

ISC

无锡固电

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) • Complementary to 2SA1162 • Audio Frequency General Purpose Amplifier Applications

JIANGSU

长电科技

Silicon NPN Epitaxial Type Transistor

Features ● High voltage and high current: VCEO = 50 V, IC = 150 mA (max) ● Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) ● High hFE: hFE = 70 700 ● Low noise: NF = 1dB (typ.), 10dB (max)

KEXIN

科信电子

Low Noise, Complementary to 2SA1162

FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162

HOTTECH

合科泰

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR ( NPN ) Features ● Audio Frequency General Purpose Amplifier Applications ● Low Noise: NF=1 dB (Typ),10dB(MAX) ● Complementary to 2SA1162

HDSEMI

海德半导体

SOT-23 Plastic-Encapsulate Transistors

FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 · Audio Frequency General Pu rpose Amplifier Applications

UMW

友台半导体

NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity

WINNERJOIN

永而佳

NPN Silicon General Purpose Transistor

FEATURE • Low Noise: NF=1dB(Typ.), 10db(Max.) • Complements of the 2SA1162

SECOS

喜可士

Low Noise, Complementary to 2SA1162

FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Silicon NPN Transistors

Silicon NPN Transistors P/b Lead(Pb)-Free

WEITRON

NPN Plastic-Encapsulate Transistors

Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

Silicon NPN Transistors

Silicon NPN Transistors P/b Lead(Pb)-Free

WEITRON

Low Noise, Complementary to 2SA1162

FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Plastic-Encapsulate Transistors

Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 1

TOSHIBA

东芝

Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz

The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications. Features • Lower VCE(sat)* • Higher Gain (hfe)* • Higher Breakdow

ONSEMI

安森美半导体

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

Low Noise, Complementary to 2SA1162

FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Plastic-Encapsulate Transistors

Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

Silicon NPN Transistors

Silicon NPN Transistors P/b Lead(Pb)-Free

WEITRON

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

Silicon NPN Transistors

Silicon NPN Transistors P/b Lead(Pb)-Free

WEITRON

Low Noise, Complementary to 2SA1162

FEATURES Low noise: NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Plastic-Encapsulate Transistors

Features • Complementary to 2SA1162 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

UTC

友顺

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO= 120 V • Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package

TOSHIBA

东芝

Silicon NPN Epitaxial Type

Features ● High voltage VCEO=120V ● High hFE ● Low noise. ● Small package.

KEXIN

科信电子

2SC27产品属性

  • 类型

    描述

  • 型号

    2SC27

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TOSHIBA TRANSISTORTO-92MOD 30V 1A .9W ECB

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
5650
原装现货,当天可交货,原型号开票
NEC
25+
TO92
54648
百分百原装现货 实单必成 欢迎询价
NEC
22+
SOT23
20000
公司只有原装 品质保证
NEC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
NEC
25+
175
公司现货库存
NEC
25+
TO-92S
9800
全新原装现货,假一赔十
NEC
25+
NA
880000
明嘉莱只做原装正品现货
CJ/长电
21+
TO-92S
30000
百域芯优势 实单必成 可开13点增值税发票
NEC
23+
NA
786
专做原装正品,假一罚百!
NEC
2450+
SOT23-3
6540
只做原装正品现货或订货!终端客户免费申请样品!

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