2SC268晶体管资料

  • 2SC268别名:2SC268三极管、2SC268晶体管、2SC268晶体三极管

  • 2SC268生产厂家:日本日电公司

  • 2SC268制作材料:Si-NPN

  • 2SC268性质:数码驱动 (Nix)_开关管 (S)

  • 2SC268封装形式:贴片封装

  • 2SC268极限工作电压:60V

  • 2SC268最大电流允许值:0.03A

  • 2SC268最大工作频率:150MHZ

  • 2SC268引脚数:3

  • 2SC268最大耗散功率:0.15W

  • 2SC268放大倍数

  • 2SC268图片代号:G-22

  • 2SC268vtest:60

  • 2SC268htest:150000000

  • 2SC268atest:0.03

  • 2SC268wtest:0.15

  • 2SC268代换 2SC268用什么型号代替:BC174,BC182,BC190,BC546,3DG111C,

型号 功能描述 生产厂家&企业 LOGO 操作

2SA11412SC2681

AudioFrequencyPowerAmplifier,HighFrequencyPowerAmplifier

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SA1141 •Hightransitionfrequency APPLICATIONS •Audiofrequencypoweramplifier •Highfrequencypoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SA1141 •Hightransitionfrequency APPLICATIONS •Audiofrequencypoweramplifier •Highfrequencypoweramplifier

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-V(BR)CEo=115V(Min) •GoodLinearityofhFE •ComplementtoType2SA1141 APPLICATIONS •Audiofrequencypoweramplifier •Highfrequencypoweramplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SA1142 APPLICATIONS •Audiofrequencypoweramplifier;high frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SA1142 APPLICATIONS •Audiofrequencypoweramplifier;high frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SC2682isdesignedforuseinAudiofrequencypoweramplifier.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSiliconTransistor

DESCRIPTION The2SC2688isdesignedforuseinColorTVchromaoutputcircuits.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Highbreakdownvoltage ·Hightransitionfrequency APPLICATIONS ·DesignedforuseinColorTVchromaoutputcircuits.

SAVANTIC

Savantic, Inc.

SAVANTIC

TO-126Plastic-EncapsulateTransistors

FEATURES ColorTVchromaoutpuptcircuits

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconNPNtransistorinaTO-126FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features LowCre,highfT. Applications ColorTVchromaoutputcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

0.2A,300VNPNPlasticEncapsulatedTransistor

FEATURES •Lowfrequencypoweramplifier •CircuitschromaoutputofColorTV

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

iscSiliconNPNPowerTransistor

DESCRIPTION ·WithTO-126package ·Highbreakdownvoltage ·Hightransitionfrequency APPLICATIONS ·DesignedforuseinColorTVchromaoutputcircuits.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ColorTVchromaoutpuptcircuits

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ColorTVchromaoutpuptcircuits

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

0.2A,300VNPNPlasticEncapsulatedTransistor

FEATURES •Lowfrequencypoweramplifier •CircuitschromaoutputofColorTV

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

0.2A,300VNPNPlasticEncapsulatedTransistor

FEATURES •Lowfrequencypoweramplifier •CircuitschromaoutputofColorTV

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

TO-126Plastic-EncapsulateTransistors

FEATURES ColorTVchromaoutpuptcircuits

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNSILICONTRANSISTOR

DESCRIPTION TheUTC2SC2688isdesignedforuseinColorTVchromaoutputcircuits. FEATURES *HighElectrostatic-Discharge-Resistance. ESDR:1000VTYP.(E-Breversebias,C=2300pF) *LowCre,HighfT Cre≤3.0pF(VCB=30V) fT≥50MHz(VCE=30V,IE=-10mA)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNPowerTransistors

文件:123.35 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:105.45 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:105.95 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTOR

文件:262.32 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SC268产品属性

  • 类型

    描述

  • 型号

    2SC268

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY NEC TRANSISTOR MP-80115V 10A 100W BCE

更新时间:2025-7-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
9050
原装现货,当天可交货,原型号开票
NEC
22+
TO126
100000
代理渠道/只做原装/可含税
NEC
25+
TO-126
860000
明嘉莱只做原装正品现货
NEC
07+
TO-126
14840
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
21+
TO-126
24840
原装现货假一赔十
NEC
2024
TO-220F
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
FAIRCHILD/仙童
21+
TO-126F
30000
百域芯优势 实单必成 可开13点增值税
NEC
24+
TO220
21200
NEC
24+
TO-126
6193
原装正品/假一罚十/支持样品/可开发票
FAIRCHILD/仙童
24+
TO126
47186
郑重承诺只做原装进口现货

2SC268芯片相关品牌

  • BILIN
  • Cree
  • DIT
  • ETC
  • HY
  • MOLEX2
  • OHMITE
  • RCD
  • SAMESKY
  • spansion
  • TOKEN
  • VBSEMI

2SC268数据表相关新闻