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2SC268晶体管资料

2SC268别名：2SC268三极管、2SC268晶体管、2SC268晶体三极管
2SC268生产厂家：日本日电公司
2SC268制作材料：Si-NPN
2SC268性质：数码驱动（Nix）_开关管（S）
2SC268封装形式：贴片封装
2SC268极限工作电压：60V
2SC268最大电流允许值：0.03A
2SC268最大工作频率：150MHZ
2SC268引脚数：3
2SC268最大耗散功率：0.15W
2SC268放大倍数：
2SC268图片代号：G-22
2SC268vtest：60
2SC268htest：150000000
2SC268atest：0.03
2SC268wtest：0.15

2SC268代换 2SC268用什么型号代替：BC174,BC182,BC190,BC546,3DG111C,

型号	功能描述	生产厂家企业	LOGO
2SC2681	2SA1141 2SC2681 Audio Frequency Power Amplifier, High Frequency Power Amplifier	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC2681	Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SA1141 • High transition frequency APPLICATIONS • Audio frequency power amplifier • High frequency power amplifier	ISC 无锡固电	ISC
2SC2681	Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SA1141 • High transition frequency APPLICATIONS • Audio frequency power amplifier • High frequency power amplifier	SAVANTIC	SAVANTIC
2SC2681	Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- V(BR)CEo=115V(Min) • Good Linearity of hFE • Complement to Type 2SA1141 APPLICATIONS • Audio frequency power amplifier • High frequency power amplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SC2682	Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SA1142 APPLICATIONS • Audio frequency power amplifier; high frequency power amplifier applications	ISC 无锡固电	ISC
2SC2682	Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SA1142 APPLICATIONS • Audio frequency power amplifier; high frequency power amplifier applications	SAVANTIC	SAVANTIC
2SC2682	NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SC2682 is designed for use in Audio frequency power amplifier.	NEC 瑞萨	NEC
2SC2688	NPN Silicon Transistor DESCRIPTION The 2SC2688 is designed for use in Color TV chroma output circuits.	NEC 瑞萨	NEC
2SC2688	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Designed for use in Color TV chroma output circuits.	SAVANTIC	SAVANTIC
2SC2688	丝印代码：C2688；TO-126 Plastic-Encapsulate Transistors FEATURES Color TV chroma out pupt circuits	DGNJDZ 南晶电子	DGNJDZ
2SC2688	Silicon NPN transistor in a TO-126F Plastic Package. Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low Cre, high fT. Applications Color TV chroma output circuits.	FOSHAN 蓝箭电子	FOSHAN
2SC2688	0.2A, 300V NPN Plastic Encapsulated Transistor FEATURES • Low frequency power amplifier • Circuits chroma output of Color TV	SECOS 喜可士	SECOS
2SC2688	isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Designed for use in Color TV chroma output circuits.	ISC 无锡固电	ISC
2SC2688	TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Color TV chroma out pupt circuits	JIANGSU 长电科技	JIANGSU
2SC2688	TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Color TV chroma out pupt circuits	KOOCHIN 灏展电子	KOOCHIN
2SC2688	Bipolar Transistor The UTC 2SC2688 is designed for use in Color TV chroma output circuits. • High Electrostatic-Discharge-Resistance. \n• Low Cre, High fT \n• ≤• 3.0 pF (VCB=30V) \n• ≥• 50MHz (VCE=30V, IE=-10mA);	UTC 友顺	UTC
2SC2688-K	0.2A, 300V NPN Plastic Encapsulated Transistor FEATURES • Low frequency power amplifier • Circuits chroma output of Color TV	SECOS 喜可士	SECOS
2SC2688-K-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-K-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-K-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-L	0.2A, 300V NPN Plastic Encapsulated Transistor FEATURES • Low frequency power amplifier • Circuits chroma output of Color TV	SECOS 喜可士	SECOS
2SC2688L-K-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-K-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-K-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-L-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-L-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-L-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-M-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-M-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-M-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-N-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-N-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-N-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-L-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-L-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-L-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688L-X-T60-A-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-M-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-M-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-M-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-N-T60-B-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-N-T60-C-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-N-T60-E-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2688-TU	丝印代码：C2688；TO-126 Plastic-Encapsulate Transistors FEATURES Color TV chroma out pupt circuits	DGNJDZ 南晶电子	DGNJDZ
2SC2688-X-T60-A-K	NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)	UTC 友顺	UTC
2SC2681	Silicon NPN Power Transistors 文件：123.35 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SC2682	Silicon NPN Power Transistors 文件：105.45 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SC2688	Silicon NPN Power Transistors 文件：105.95 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SC2688	晶体管	JSCJ 长晶科技	JSCJ
2SC2688	Transistor-Bipolar Power Transistors	RENESAS 瑞萨	RENESAS
2SC2688	SILICON NPN TRANSISTOR 文件：202.97 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC2688	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688_11	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688_15	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688G-X-T60-K	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688G-X-T60-K	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688G-X-T6C-K	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688G-X-T6C-K	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC2688L-X-T60-K	NPN SILICON TRANSISTOR 文件：262.32 Kbytes Page：5 Pages	UTC 友顺	UTC

2SC268产品属性

类型
描述
NPN/PNP：
NPN
Vcbo (V)：
180
VCEO (V)：
180
Vebo (V)：
5
IC (A) @25 °C：
0.1
VCE(sat) (V) max.：
0.5
hFE min.：
100
hFE max.：
320
fT (MHz) typ.：
180
Cob (pF) typ.：
4.5
Package Type：
MP-5
Production Status：
EOL announced

2SC268供应商更多...

更新时间：2026-5-15 19:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	2SC2682-Y	FAIRCHILD	22+	TO-126F	20000	公司只有原装品质保证	询价
深圳市豪迈兴电子有限公司	2SC2682	NEC	24+		4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市威雅利发展有限公司	2SC2682	NEC	07+	TO-126	14840	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市腾亿芯科技有限公司	2SC2682-Y	FAIRCHILD/仙童	25+	TO-126F	20000	原装	询价
深圳市凯睿晟科技有限公司	2SC2682-Y	FAIRCHILD/仙童	21+	TO-126F	30000	百域芯优势实单必成可开13点增值税	询价
深圳市拓亿芯电子有限公司	2SC2682-Y	FSC	25+	TO-126	30000	代理全新原装现货,价格优势	询价
深圳市一线半导体有限公司	2SC2682-Y	SEC	24+	T0-126	1250		询价
上海金庆电子技术有限公司	2SC2682-O	FAIRCHILD	11+	TO-126F	3216	全新发货1-2天	询价
深圳市东来宝电子科技有限公司	2SC2682-Y	FAIRCHILD/仙童	24+	TO126	47186	郑重承诺只做原装进口现货	询价
深圳市宇创芯科技有限公司	2SC2682-Y	FAIRCHILD/仙童	24+	TO-126F	9600	原装现货,优势供应,支持实单!	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SC268晶体管资料

2SC268产品属性

2SC268供应商更多...

2SC268芯片相关品牌

2SC268规格书下载地址

2SC268参数引脚图相关

2SC268数据表相关新闻

2SB857L-TO252R-D-TG_UTC代理商

2SC1815L-TO92K-Y-TG_UTC代理商

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC2334中文资料

2SC2859中文资料

DdatasheetPDF页码索引