0.2A, 300V NPN Plastic Encapsulated Transistor

FEATURES • Low frequency power amplifier • Circuits chroma output of Color TV

TO-126 Plastic-Encapsulate Transistors

FEATURES Color TV chroma out pupt circuits

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low Cre, high fT. Applications Color TV chroma output circuits.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Designed for use in Color TV chroma output circuits.

NPN SILICON TRANSISTOR

DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)

NPN SILICON TRANSISTOR

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NPN SILICON TRANSISTOR

DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)

NPN SILICON TRANSISTOR

DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)

NPN SILICON TRANSISTOR

DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)