2SC255晶体管资料

  • 2SC255别名:2SC255三极管、2SC255晶体管、2SC255晶体三极管

  • 2SC255生产厂家:日本冲电气工业股份公司

  • 2SC255制作材料:Si-NPN

  • 2SC255性质:通用型 (Uni)

  • 2SC255封装形式:直插封装

  • 2SC255极限工作电压:80V

  • 2SC255最大电流允许值:0.8A

  • 2SC255最大工作频率:250MHZ

  • 2SC255引脚数:3

  • 2SC255最大耗散功率:0.65W

  • 2SC255放大倍数

  • 2SC255图片代号:C-40

  • 2SC255vtest:80

  • 2SC255htest:250000000

  • 2SC255atest:0.8

  • 2SC255wtest:0.65

  • 2SC255代换 2SC255用什么型号代替:BC140,BC141,BC300,BC301,BFX96A,BFX97A,BSW53,BSW54,2N1990,2N2217,3DA32C,

型号 功能描述 生产厂家 企业 LOGO 操作

TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complement

TOSHIBA

东芝

NPN Plastic Encapsulated Transistor

FEATURES • High Voltage • Low Saturation Voltage • Small Collector Output Capacitance • Complementary to 2SA1091

SECOS

喜可士

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High voltage ● Low saturation voltage ● Small collector output capacitance ● Complementary to 2SA1091

JIANGSU

长电科技

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 20mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

DGNJDZ

南晶电子

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High collector breakdown voltage : VCEO=400V(Min) • Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

SAVANTIC

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION 1. With TO-220C package 2. High collector breakdown voltage : V CEO=400V(Min) 3. Excellent switching time :tr=1.0µs(Max.) APPLICATIONS 1. Switching regulator and high voltage switching applications 2. High speed DC-DC converter applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max.@IC=4A APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(I) package ·High collector breakdown voltage VCEO=400V(Min) ·Excellent switching times : tr=1.0μs(Max.) tf=1.0μs(Max.)@ IC=4A APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(I) package • High collector breakdown voltage VCEO=400V(Min) • Excellent switching times : tr=1.0µs(Max.) tf=1.0µs(Max.)@ IC=4A APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

SAVANTIC

TRANSISTOR (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DD-DC CONVERTER APPLICATIONS. FEATURES: ● Excellent Switching Times : tr=1.0μs (Max.), tf = 1.0μs (Max.) at IC=4A ● High Collector Breakdwon Voltage : VCEO=400V

TOSHIBA

东芝

POWER TRANSISTORS(8.0A,400V,80W)

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage, high-speed, power switching in inductive circuit, and switchmode applications such as switching regulators, converters. FEATURES: * Collector-Emitter Sustaining Voltage- VCE(br) = 400 V (Min) * Collector-Emitter

MOSPEC

统懋

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Voltage- : VCEO=400V(Min) • High Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCBO • Low collector saturation voltage • High transition frequency APPLICATIONS • Audio frequency output amplifier

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCBO • Low collector saturation voltage • High transition frequency APPLICATIONS • Audio frequency output amplifier

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCBO • Low collector saturation voltage • High transition frequency APPLICATIONS • Audio frequency output amplifier

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCBO • Low collector saturation voltage • High transition frequency APPLICATIONS • Audio frequency output amplifier

SAVANTIC

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

文件:641.77 Kbytes Page:4 Pages

TOSHIBA

东芝

TO-92 Bipolar Junction Transistors

ETC

知名厂家

Transistor

ETC

知名厂家

Small Signal Transistor

SECOS

喜可士

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

文件:641.77 Kbytes Page:4 Pages

TOSHIBA

东芝

NPN Plastic Encapsulated Transistor

文件:772.58 Kbytes Page:3 Pages

SECOS

喜可士

Silicon NPN Power Transistors

文件:150.72 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:126.87 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:151.15 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:181.26 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:102.11 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:102.11 Kbytes Page:3 Pages

SAVANTIC

2SC255产品属性

  • 类型

    描述

  • 型号

    2SC255

  • 功能描述

    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-18

更新时间:2025-12-25 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
18+
TO-92
85600
保证进口原装可开17%增值税发票
TOSHIBA
24+
TO-92
3000
原装现货假一罚十
TOSHIBA/东芝
24+
NA/
700
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOS
NEW
TO-92
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
CJ/长电
21+
TO-92
30000
百域芯优势 实单必成 可开13点增值税发票
长电
25+23+
TO-92
23829
绝对原装正品全新进口深圳现货
TOS
24+
TO-92
30000
CJ/长电
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

2SC255数据表相关新闻