TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complement

NPN Plastic Encapsulated Transistor

FEATURES • High Voltage • Low Saturation Voltage • Small Collector Output Capacitance • Complementary to 2SA1091

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High voltage ● Low saturation voltage ● Small collector output capacitance ● Complementary to 2SA1091

丝印代码：C2551；TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 20mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

TO-92 Bipolar Junction Transistors

Transistor

Small Signal Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

文件：641.77 Kbytes Page：4 Pages

丝印代码：C2551；TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

文件：641.77 Kbytes Page：4 Pages

NPN Plastic Encapsulated Transistor

文件：772.58 Kbytes Page：3 Pages