2SC251晶体管资料

  • 2SC251(A)别名:2SC251(A)三极管、2SC251(A)晶体管、2SC251(A)晶体三极管

  • 2SC251(A)生产厂家:日本日电公司

  • 2SC251(A)制作材料:Si-NPN

  • 2SC251(A)性质:甚高频 (VHF)_超高频/特高频 (UHF)

  • 2SC251(A)封装形式:直插封装

  • 2SC251(A)极限工作电压

  • 2SC251(A)最大电流允许值

  • 2SC251(A)最大工作频率:900MHZ

  • 2SC251(A)引脚数:3

  • 2SC251(A)最大耗散功率

  • 2SC251(A)放大倍数

  • 2SC251(A)图片代号:D-13

  • 2SC251(A)vtest:0

  • 2SC251(A)htest:900000000

  • 2SC251(A)atest:0

  • 2SC251(A)wtest:0

  • 2SC251(A)代换 2SC251(A)用什么型号代替:BF180,BF181,BF182,BF183,BF357,BF377,BF378,BF689,BF763,2N2857,3DG82A,

型号 功能描述 生产厂家 企业 LOGO 操作

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) ● Specified 28V, 28MHz Characteristics ● Output Power : Po = 150WPEP (Min.) ● Power Gain : Gp = 12.2dB (Min.) ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −30dB (Max.)

TOSHIBA

东芝

SILICON NPN EPITAXIAL PLANAR TYPE

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) • Specified 28V, 28MHz Characteristics • Output Power : Po = 150WPEP (Min.) • Power Gain : Gp = 12.2dB (Min.) • Collector Efficiency : ηC = 35 (Min.) • Intermodulation Distortion : IMD = −30dB (Max.)

TOSHIBA

东芝

Silicon NPN Triple Diffused

Application • VHF Amplifier • VHF TV Tuner, Mixer

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors 0 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

SAVANTIC

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

RENESAS

瑞萨

Silicon NPN Power Transistor

DESCRIPTION • LowCollector Saturation Voltage , • Fast Switching Speed APPLICATIONS • Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

ISC

无锡固电

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers.

NEC

瑞萨

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SC2518 is NPN triple diffused transistor designed for switching regulator, DC-DC converter and ultrasonic appliance applications. FEATURES ● High speed, high voltage switching. ● Low collector saturation voltage. ● Specified of reverse biased SOA with inductive loads.

NEC

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for switching regulator, DC-DC converter and ultrasonic applicance applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for switching regulator, DC-DC converter and ultrasonic applicance applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON NPN EPITAXIAL PLANAR

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Panasonic

松下

SILICON NPN EPITAXIAL PLANAR TYPE

TOSHIBA

东芝

Silicon NPN Power Transistor

文件:132.2 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:104.89 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:104.82 Kbytes Page:3 Pages

SAVANTIC

三极管

MOSPEC

统懋

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

2SC251产品属性

  • 类型

    描述

  • 型号

    2SC251

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    TRANSISTOR(2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS(28v SUPPLY VOLTAGE USE)

更新时间:2025-12-25 11:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
CAN4
42894
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SANKEN
24+
NA/
258
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
专业铁帽
CAN4
67500
铁帽原装主营-可开原型号增税票
NEC
23+
82
6500
专注配单,只做原装进口现货
SANKEN
23+
TO-200
50000
全新原装正品现货,支持订货
NEC
专业铁帽
CAN10
500
原装铁帽专营,代理渠道量大可订货
HITACHI
24+
60000
NEC
22+
CAN-3
20000
公司只有原装 品质保证
SANKEN
24+
TO-200
5000
只做原装公司现货
NEC
17+
TO-220
31518
原装正品 可含税交易

2SC251数据表相关新闻