TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium-Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50mA)

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Strobe Flash Applications ● Medium Power Amplifier Applications

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High DC current gain and excellent hFE linearity,low saturation voltage. Applications Medium power amplifier applications.

2SC2501

MOLD TYPE BIPOLAR TRANSISTORS

POWER TRANSISTORS(6.0A,400V,50W)

SWITCHMODE SERIES NPN POWER TRANSISTOS 6.0 AMPERE SILICON POWER TRANSISTORS 400 VOLTS 50 WATTS

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220C package ·High breakdown voltage ·High speed switching time APPLICATIONS ·For use in high-voltage,high-speed ,power switching in inductive circuit.

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220C package ·High breakdown voltage ·High speed switching time APPLICATIONS ·For use in high-voltage,high-speed ,power switching in inductive circuit.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Fast Switching Speed • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A APPLICATIONS • Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly s

2SC2504

2SC2504

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , th

SILICON NPN EPITAXIAL PLANAR TYPE

SILICON NPN EPITAXIAL PLANAR TYPE 2 ~ 30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. (LOW SUPPLY VOLTAGE USE)

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) ● Specified 28V, 28MHz Characteristics ● Output Power : Po = 150WPEP (Min.) ● Power Gain : Gp = 12.2dB (Min.) ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −30dB (Max.)

SILICON NPN EPITAXIAL PLANAR TYPE

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) • Specified 28V, 28MHz Characteristics • Output Power : Po = 150WPEP (Min.) • Power Gain : Gp = 12.2dB (Min.) • Collector Efficiency : ηC = 35 (Min.) • Intermodulation Distortion : IMD = −30dB (Max.)

Silicon NPN Triple Diffused

Application • VHF Amplifier • VHF TV Tuner, Mixer

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

Silicon NPN Power Transistors

Silicon NPN Power Transistors 0 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

Silicon NPN Power Transistor

DESCRIPTION • LowCollector Saturation Voltage , • Fast Switching Speed APPLICATIONS • Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for switching regulator, DC-DC converter and ultrasonic applicance applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Low Collector Saturation Voltage • High Speed Switching APPLICATIONS • Designed for switching regulator, DC-DC converter and ultrasonic applicance applications.

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SC2518 is NPN triple diffused transistor designed for switching regulator, DC-DC converter and ultrasonic appliance applications. FEATURES ● High speed, high voltage switching. ● Low collector saturation voltage. ● Specified of reverse biased SOA with inductive loads.

SILICON NPN EPITAXIAL PLANAR

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters

Silicon NPN Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SA1075 ·Excellent safe operating area ·Ultra fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications

Silicon NPN Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SA1075 ·Excellent safe operating area ·Ultra fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SA1077 • Fast switching speed • Excellent safe operating area APPLICATIONS • High frequency power amplifiers • Audio power amplifiers • Switching regulators • DC-DC converters

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SA1077 • Fast switching speed • Excellent safe operating area APPLICATIONS • High frequency power amplifiers • Audio power amplifiers • Switching regulators • DC-DC converters

SILICON HIGH SPEED POWER TRANSISTOR

SILICON NPN RING EMITTER TRANSISTOR (RET)

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.7A • Complement to Type 2SA1078 APPLICATIONS • High frequency power amplifier, Audio power amplifier Dirvers

SILICON HIGH SPEED POWER TRANSISTOR

SILICON NPN RING EMITTER TRANSISTOR (RET) ● High fT = 160 MHz (typ) ● Excellent Safe Operating Area ● Improved reverse Second-Breakdown Capability ● Excellent Current Gain Linearity

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE)

FEATURES: Specified 28V, 28MHz Characteristics : Output Power: Po 150WPEP Minimum Gain : Gpe=12.2dB e-35 (Min.) : Efficiency : Intermodulation Distortion: IMD=-30dB (Max.)

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER, DRIVER STAGE FOR LED LAMP, TEMPERATURE COMPENSATION APPLICATIONS)

Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.) APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?

DESCRIPTION 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. APPLICATION 30 to 35 watts output power amplifiers in VHF band mobile radio applications.

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

DESCRIPTION • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082

Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547 Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085

Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547 Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085

Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547 Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085

TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complement

NPN Plastic Encapsulated Transistor

FEATURES • High Voltage • Low Saturation Voltage • Small Collector Output Capacitance • Complementary to 2SA1091

TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 20mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High voltage ● Low saturation voltage ● Small collector output capacitance ● Complementary to 2SA1091

TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications.